scholarly journals Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

2010 ◽  
Vol 81 (2) ◽  
Author(s):  
C. Marcenat ◽  
J. Kačmarčík ◽  
R. Piquerel ◽  
P. Achatz ◽  
G. Prudon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Wafers ◽  
Superconducting Phase ◽  
Silicon Films ◽  
Temperature Transition ◽  
Boron Doped ◽  
Doped Silicon

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

Low Temperature Silcore® Deposition of Undoped and Doped Silicon Films

2019 ◽  
Vol 3 (2) ◽  
pp. 203-215 ◽  
Author(s):  
Pamela R. Fischer ◽  
Steven Van Aerde ◽  
Ed Oosterlaken ◽  
Bart Bozon ◽  
Peter M. Zagwijn ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Films ◽  
Doped Silicon

Effect of the Annealing on the Low-Temperature Charge Transport Properties of Heavily Boron-Doped Nanocrystalline Silicon Films for Thermoelectric Applications

2016 ◽  
Vol 3 (4) ◽  
Author(s):  
Laura Zulian ◽  
Francesco Segrado ◽  
Dario Narducci
Keyword(s):  
Low Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Power Factor ◽  
High Doping Level ◽  
Boron Doped ◽  
Nanocrystalline Silicon Films

Abstract Silicon is the reference material of microelectronics, is readily available, relatively unexpensive, and its use may take profit of a fantastic technology. This may explain why a substantial effort has focused on improving its thermoelectric efficiency, either by top-down nanostructuring or through suitable processing. In this paper we report an analysis of the electronic transport properties of heavily boron-doped nanocrystalline silicon films. High-temperature thermal treatments are confirmed to remarkably increase its thermoelectric power factor. Electrical conductivity and Hall effect measurements were carried out over the temperature range 20–300 K along with Seebeck coefficient measurements. We provide evidence of the occurrence of low-temperature hopping conduction between impurity subbands. Dopant ionization was studied as a function of temperature. Freeze-out temperature was found to correlate with the Seebeck coefficient in agreement with Pisarenko equation. This brings to the conclusion that, while untreated samples are weakly degenerate, the thermal processing reverts them into non-degenerate semiconductors, in spite of the high doping level.

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