scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Transmission Electron

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

POLY-SILICON THIN FILMS PREPARED BY LOW TEMPERATURE ALUMINUM-INDUCED CRYSTALLIZATION

2001 ◽  
Vol 15 (17n19) ◽  
pp. 716-721
Author(s):  
YASUHIRO MATSUMOTO ◽  
MASAO TAMURA ◽  
RENE ASOMOZA ◽  
ZHENRUI YU
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Hall Effect Measurements ◽  
High Carrier ◽  
P Type ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

P-type poly-Si thin films prepared by low temperature Aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thicknessess were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550°C. XRD, SIMS, TEM and Hall effect measurements were carried out to characterize the annealed films. Results show that a-Si:H contacted with adequate Al could be crystallized at temperature as low as 300°C after annealing for 60 minutes. This material has high carrier concentration as well as high Hall mobility can be used as a p-layer or seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process.

scholarly journals Effect of Halogen on the Structure of Low Temperature Polycrystalline Silicon Thin Films Fabricated on Glass Substrates.

1999 ◽  
Vol 107 (1251) ◽  
pp. 1099-1104 ◽  
Author(s):  
Toshio KAMIYA ◽  
Yoshiteru MAEDA ◽  
Kouichi NAKAHATA ◽  
Takashi KOMARU ◽  
Charles M. FORTMANN ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Glass Substrates ◽  
Silicon Thin Films

Low temperature resistivity of heavily boron doped LPVCD polysilicon thin films

2008 ◽  
Vol 41 (16) ◽  
pp. 162002 ◽  
Author(s):  
S Žonja ◽  
M Očko ◽  
M Ivanda ◽  
P Biljanović
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Boron Doped ◽  
Temperature Resistivity

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 ◽  
Vol 50 (5) ◽  
pp. 051301 ◽  
Author(s):  
Lynda Saci ◽  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Jonathan Boucher ◽  
Maéva Collet ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Silicon Thin Films ◽  
Nitrogen Effect ◽  
Doped Silicon
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