A study of iron‐related centers in heavily boron‐doped silicon by deep‐level transient spectroscopy

1988 ◽  
Vol 64 (11) ◽  
pp. 6306-6310 ◽  
Author(s):  
O. O. Awadelkarim ◽  
B. Monemar
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Boron Doped ◽  
Doped Silicon ◽  
Transient Spectroscopy

Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy

1996 ◽  
Vol 54 (4) ◽  
pp. 2662-2666 ◽  
Author(s):  
Jian-hong Zhu ◽  
Da-wei Gong ◽  
Bo Zhang ◽  
Fang Lu ◽  
Chi Sheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
Hole Confinement

High and Low Temperature Measurements of the Chromium Diffusivity in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
J. Zhu ◽  
D. Barbier
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Deep Level ◽  
Boron Doped ◽  
Diffusivity Measurements ◽  
Doped Silicon ◽  
Data Points ◽  
Transient Spectroscopy ◽  
Association Time ◽  
Short Time

AbstractBy grouping high and low temperature diffusivity measurements in boron-doped silicon, a new diffusivity law for chromium in the 20–1050 °C temperature range has been established. High temperature diffusivities were deduced from erfc fits of chromium-boron pair profiles measured by means of Deep Level Transient Spectroscopy in chromium-plated substrates, after annealing for a short time in a lamp furnace. Low temperature diffusivities were derived from the association time constants of the chromium-boron pairing reaction in chromium-contaminated specimens. The whole data points were well fitted using the following expression for the diffusion coefficient: D= 2.6×10-3 exp(-0.81 ± 0.02 eV/kT). Because of the wide 1/T interval available, the migration enthalpy value is more accurate than the previous determinations using only high temperature diffusivity results.

Charge-sensitive deep level transient spectroscopy of boron-doped and gamma-irradiated mono- and polycrystalline diamond

2003 ◽  
Vol 12 (10-11) ◽  
pp. 1783-1787 ◽  
Author(s):  
V.I. Polyakov ◽  
A.I. Rukovishnikov ◽  
V.P. Varnin ◽  
I.G. Teremetskaya ◽  
V.A. Laptev
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Transient Spectroscopy ◽  
Gamma Irradiated

Interstitial Carbon in p-Type Copper-Doped Silicon

2015 ◽  
Vol 242 ◽  
pp. 302-307
Author(s):  
Nikolai Yarykin ◽  
Jörg Weber
Keyword(s):  
Band Gap ◽  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Lower Half ◽  
Interstitial Carbon ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
P Type

The spectrum of defects produced by 5 MeV electron irradiation at room temperature in the oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cui) is studied using the deep-level transient spectroscopy. It is observed that the interstitial carbon defects (Ci), which are abundant in irradiated copper-free samples, are not detected directly after irradiation. The phenomenon is attributed to the formation of a {Cui, Ci} complexes which exhibit no deep levels in the lower half of the band gap. The complexes are shown to dissociate under anneals at 300-340 K resulting in the appearance of the Ci species.

Charge-Based Deep Level Transient Spectroscopy of Semiconducting and Insulating Materials

2001 ◽  
Vol 699 ◽  
Author(s):  
V.I. Polyakov ◽  
A.I. Rukovishnokov ◽  
N.M. Rossukanyi ◽  
B. Druz
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Polycrystalline Diamond ◽  
Wide Bandgap ◽  
Insulating Materials ◽  
Si Substrates ◽  
Boron Doped ◽  
Trapping Centers ◽  
Transient Spectroscopy ◽  
Rate Window

AbstractThe opportunity of the charge-based deep level transient spectroscopy (Q-DLTS) for study of the structures based on wide bandgap semiconducting and insulating materials such as diamond and Al2O3 was demonstrated. Using our isothermal Q-DLTS method with rate window (tm)scanning we obtained information about concentration, activation energy and capture cross-section of the native and extrinsic electrical active defects - trapping centers (TC) in slightly boron-doped polycrystalline diamond, diamond single-crystal and in the structures Al2O3 film on NiFe and Si substrates. In comparison with widely used capacitance-based deep level transient spectroscopy, Q-DLTS gives one possibility to investigate the structures in which a capacitance does not depend on the charge state of the surface and bulk traps.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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