Investigation of carrier compensation traps in n−-GaN drift layer by high-temperature deep-level transient spectroscopy

2020 ◽  
Vol 117 (11) ◽  
pp. 112103
Author(s):  
Huayang Huang ◽  
Xuelin Yang ◽  
Shan Wu ◽  
Jianfei Shen ◽  
Xiaoguang He ◽  
...  
Keyword(s):  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Drift Layer

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

CW Laser Induced Deep Level Defects in Virgin Silicon.

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
High Temperature ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Solid Phase ◽  
Deep Level ◽  
Deep Levels ◽  
Cw Laser ◽  
Temperature State ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTDeep Level Transient Spectroscopy has been used to investigate cw laser induced defects in virgin silicon. Two main regimes have been found. In the solid phase regime, two well defined deep levels at Ec−0.19 eV and Ec−0.45 eV are observed. This point defect introduction is proposed to be involved in the degradation of ion-implanted cw laser annealed junctions. The mechanism leading to point defects generation is likely to involve trapping of in–diffused vacancies, quenched–in from the high temperature state. In the slip lines or melt regimes, additionnal deep levels are detected, which are ascribed to dislocations.

Deep Level Transient Spectroscopy Study Of High-Temperature Aluminum Implanted 6H-SiC

1996 ◽  
Vol 442 ◽  
Author(s):  
Yuri A. Stotski ◽  
Igor O. Usov ◽  
Alexander V. Suvorov
Keyword(s):  
High Temperature ◽  
Carrier Concentration ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Epitaxial Layers ◽  
Spectroscopy Study ◽  
Four Levels ◽  
Transient Spectroscopy ◽  
The Relationship

AbstractDeep levels in 6H-SiC wafers implanted with Al+ ions at high-temperature were studied using current deep level transient spectroscopy (iDLTS). Aluminum was implanted at a temperature of 1800 °C with an energy of 40 keV and a dose of 2 × 1016 cm−2 into n-type epitaxial layers with different carrier concentration. Four levels were found, at Ec−0.12, Ec−0.13, Ec−1.06 and Ev+0.35 eV. It was established that modification of the carrier concentration in original ntype 6H-SiC epitaxial layers affects the deep levels concentration. The relationship between the thickness of the space charge region and the relative deep level concentration was considered.

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 365-368 ◽  
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Implantation Damage ◽  
Transient Spectroscopy ◽  
P Type ◽  
Two Peaks ◽  
Dlts Spectra

The authors have investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by N+, P+, Al+ implantation, by deep level transient spectroscopy (DLTS). Ne+-implanted samples have been also prepared to investigate the pure implantation damage. In the n-type as-grown material, Z1/2 (Ec – 0.63 eV) and EH6/7 (Ec – 1.6 eV) are dominant deep levels. When the implant dose is low, seven peaks (IN1, IN3 ~ IN6, IN8, IN9) have emerged by implantation and annealing at 1000oC in the DLTS spectra from all n-type samples. After high-temperature annealing at 1700oC, however, most DLTS peaks disappeared, and two peaks, Z1/2 and EH6/7 survive. In the p-type as-grown material, D center (Ev + 0.40 eV) and HK4 (Ev + 1.4 eV) are dominant. When the implant dose is low, two peaks (IP1, IP3) have emerged by implantation and annealing at 1000oC, and four traps IP2, IP4 (Ev + 0.72 eV), IP7 (Ev + 1.3 eV), and IP8 (Ev + 1.4 eV) are dominant after annealing at 1700oC.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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