Electrical Characterisation of P-Type CdxHg1−xTe Grown by Movpe

1989 ◽  
Vol 161 ◽  
Author(s):  
Anne Royle ◽  
J S Gough ◽  
S J C Irvine ◽  
J B Mullin
Keyword(s):  
Hall Effect ◽  
Interdiffused Multilayer Process ◽  
Cdte Buffer ◽  
Low X ◽  
P Type ◽  
Fitting Parameters

ABSTRACTThe results of electrical characterisation of a series of MOVPE layers of CdxHg1−xTe (CMT) grown by the interdiffused multilayer process (IMP) are reported. It is shown that the properties of the CMT layers when grown as a “sandwich” between CdTe buffer and cap layers display classical p-type Hall effect curves. These have been modelled and the sensitivity of the fitting parameters are reported. It is shown that there is evidence of complex (“anomalous”) two-layer like behaviour in low x material which is not attributable to inversion behaviour.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Akimasa Yamada ◽  
Koji Matsubara ◽  
Keiichiro Sakurai ◽  
Shogo Ishizuka ◽  
Hitoshi Tampo Hajime ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Fermi Energy ◽  
Open Circuit Voltage ◽  
Material Selection ◽  
Open Circuit ◽  
Flat Band ◽  
Band Energy ◽  
Low X ◽  
P Type

AbstractThe reasons why the open circuit voltage (Voc) of high-x CuIn1-xGaxSe2 (CIGS)/ZnO solar cells remain low are discussed. Here it is shown that the Voc ceiling can be interpreted simply on the basis of a model that the valence-band energy (Ev) of CIGS is almost immovable irrespective of x. When the conduction-band energy (Ec) of ZnO is lower than that of high-x CIGS (DEc<0), the built-in potential (Vbi) of a CIGS/ZnO junction is equivalent to the flat-band potential (Vbi) that arises from the separation between the Fermi energies of the two materials. If the Ev (and therefore the Fermi energy) of p-type CIGS is constant with increasing x, the Vbi and Voc that follows the Vbi remain unchanged since the Fermi energy of ZnO is constant. This unchangeable Voc reduces the conversion efficiency of high-x CIGS cells in cooperation with reduced photocurrents due to a larger bandgap. A positive offset, ΔEc>o gives rise to a photoelectrons barrier in the conduction-band that partially cancels Voc, thus the Voc of a low-x CIGS cell is governed by the Ec of CIGS. Based upon this concept, a material selection guideline is given for the windows and transparent electrodes appropriate for high-x CIGS absorbers-based solar cells.

PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

1957 ◽  
Vol 35 (1) ◽  
pp. 91-97 ◽  
Author(s):  
J. S. Blakemore
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Indium Antimonide ◽  
Impurity Concentration ◽  
Optical Data ◽  
Type Specimens ◽  
Large Gradient ◽  
Gallium Indium Antimonide ◽  
P Type ◽  
Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

2013 ◽  
Vol 175-176 ◽  
pp. 119-122 ◽  
Author(s):  
Cui Yu ◽  
Jia Li ◽  
Kuanghong Gao ◽  
Tie Lin ◽  
Qingbin Liu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Weak Localization ◽  
Epitaxial Graphene ◽  
P Type

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate

2013 ◽  
Vol 113 (16) ◽  
pp. 164508 ◽  
Author(s):  
R. Macaluso ◽  
M. Mosca ◽  
C. Calì ◽  
F. Di Franco ◽  
M. Santamaria ◽  
...  
Keyword(s):  
Hall Effect ◽  
Zno Films ◽  
Type Assignment ◽  
Inp Substrate ◽  
Hall Effect Measurements ◽  
P Type

Laser-Tuned Large Photo Hall Effect in p-Type Silicon Based on Surface States

2020 ◽  
Vol 2 (4) ◽  
pp. 906-912
Author(s):  
Diyuan Zheng ◽  
Xinyuan Dong ◽  
Jing Lu ◽  
Anhua Dong ◽  
Yiru Niu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type ◽  
Silicon Based

Hall Effect in p-Type Germanium at High Electric Field

1965 ◽  
Vol 20 (2) ◽  
pp. 229-236 ◽  
Author(s):  
Ryōichi Yamamoto ◽  
Mitsusuke Ikeda ◽  
Hisanao Sato
Keyword(s):  
Electric Field ◽  
Hall Effect ◽  
High Electric Field ◽  
P Type
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