PROPERTIES OF GALLIUM INDIUM ANTIMONIDE

1957 ◽  
Vol 35 (1) ◽  
pp. 91-97 ◽  
Author(s):  
J. S. Blakemore
Keyword(s):  
Electrical Conductivity ◽  
Hall Effect ◽  
Indium Antimonide ◽  
Impurity Concentration ◽  
Optical Data ◽  
Type Specimens ◽  
Large Gradient ◽  
Gallium Indium Antimonide ◽  
P Type ◽  
Electrical Data

Electrical conductivity and Hall effect are measured for p-type specimens of polycrystalline GaSb.InSb with impurity concentration about 1017 cm.−3. Analysis of these data suggests that μn/μp = 11, and that the intrinsic gap varies linearly with temperature from 0.265 ev. at 0° K. Measurement of the photoconductive limit at various temperatures shows that the gap widens on heating, though the electrical data seem difficult to reconcile with the large gradient of +1.1 × 10−3 ev./°C. indicated by the optical data.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

Transition from n- to p-type electrical conductivity induced by ethanol adsorption on α-tellurium dioxide nanowires

2009 ◽  
Vol 138 (1) ◽  
pp. 207-213 ◽  
Author(s):  
T. Siciliano ◽  
A. Tepore ◽  
G. Micocci ◽  
A. Genga ◽  
M. Siciliano ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Tellurium Dioxide ◽  
P Type ◽  
Ethanol Adsorption

LOW TEMPERATURE THERMOELECTRIC PROPERTIES AND AGING PHENOMENA OF NANOSTRUCTURED p-TYPE Bi2-XSbXTe3 (x = 1.46, 1.48, 1.52 AND 1.55)

2013 ◽  
Vol 06 (05) ◽  
pp. 1340008 ◽  
Author(s):  
DALE HITCHCOCK ◽  
YEN-LIANG LIU ◽  
YUFEI LIU ◽  
TERRY M. TRITT ◽  
JIAN HE ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Low Temperature ◽  
Thermoelectric Properties ◽  
Optimal Composition ◽  
Ambient Conditions ◽  
Bulk Materials ◽  
The Past ◽  
Aging Phenomena ◽  
P Type ◽  
Cold Pressed

Over the past decade the widely used p-type ( Bi 2-x Sb x) Te 3 bulk thermoelectric materials have been subject to various nanostructuring processes for higher thermoelectric performance. However, these nanostructuring processing were conducted on compositions optimized for bulk materials (x ~ 1.52–1.55). This leads to the question of whether the optimal composition for bulk materials is the same for their nanoscale counterparts. In this work we hydrothermally grew Bi 2-x Sb x Te 3 nanopowders (nominally, x = 1.46, 1.48, 1.52 and 1.55) and measured their thermoelectric properties on cold-pressed vacuum-sintered pellets (74–78% of the theoretical density) below 300 K. The measurements were conducted 18 months apart to probe the aging phenomena, with the samples stored in ambient conditions. We have found that (i) the peak of thermopower shifts to lower temperatures upon nanostructuring but it shifts back to higher temperatures upon aging; (ii) the electrical conductivity degrades by a factor of 1.5–2.3 upon aging while the temperature dependence is largely retained; and (iii) the ZT of freshly made samples is sensitive to the x value, a maximum ZT ~ 1.25(~ 0.62) at ~ 270 K (~ 255 K) was attained in the freshly made sample x = 1.55(x = 1.46), respectively; while the ZT of aged samples is significantly lowered by a factor of 2–4 but lesser x-dependent. These observations have been discussed in the context of charge buildup and compensation at grain boundaries.

scholarly journals Significantly enhanced thermoelectric performance of Cu-doped p-type Bi0.5Sb1.5Te3 by a hydrothermal synthesis method

RSC Advances ◽  
2017 ◽  
Vol 7 (65) ◽  
pp. 41111-41116 ◽  
Author(s):  
Zichen Wei ◽  
Chenyang Wang ◽  
Li You ◽  
Shijie Zhao ◽  
Kang Yang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Hydrothermal Synthesis ◽  
Hydrothermal Method ◽  
Synthesis Method ◽  
Thermoelectric Performance ◽  
P Type

Increased electrical conductivity and decreased thermal conductivity were achieved simultaneously in the Cu-doped Bi0.5Sb1.5Te3 synthesized by a hydrothermal method.

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