Hall Effect in p-Type Germanium at High Electric Field

1965 ◽  
Vol 20 (2) ◽  
pp. 229-236 ◽  
Author(s):  
Ryōichi Yamamoto ◽  
Mitsusuke Ikeda ◽  
Hisanao Sato
Keyword(s):  
Electric Field ◽  
Hall Effect ◽  
High Electric Field ◽  
P Type

High electric-field hall effect measurements onn-type InSb at 77 K

1982 ◽  
Vol 27 (2) ◽  
pp. 107-120 ◽  
Author(s):  
G. E. Alberga ◽  
R. G. Welzenis ◽  
W. C. Zeeuw
Keyword(s):  
Electric Field ◽  
Hall Effect ◽  
High Electric Field ◽  
Hall Effect Measurements

Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET

2015 ◽  
Vol 821-823 ◽  
pp. 761-764 ◽  
Author(s):  
Yasuhiro Kagawa ◽  
Rina Tanaka ◽  
Nobuo Fujiwara ◽  
Katsutoshi Sugawara ◽  
Yutaka Fukui ◽  
...  
Keyword(s):  
Electric Field ◽  
Effective Means ◽  
Gate Oxide ◽  
High Electric Field ◽  
Type Region ◽  
Trade Off ◽  
Parasitic Resistance ◽  
Protection Layer ◽  
P Type

This paper investigates thereduction of parasitic resistance (JFET resistance) betweenthe p-well and the grounded p-type gate-oxide protection layer (BPW)of a trench-gate SiC-MOSFET. Forming a deeptrench is a way to reducethe JFET resistance, but this consequently leads to high electric field at thebottom oxide. In order to improve the trade-off between the specific on-resistance (Ron,sp) and the maximum bottom oxide electric field (Eox), wenewly developed a trench-gate SiC-MOSFET with an n-type region, named DepletionStopper (DS), formed under the entire p-welllayer. As aresult of fabrication, Ron,sp of the trench-gate SiC-MOSFET with DS is70 % lower than that without DS at a trench depth (dt) of about 1.5 mm. The dtof the trench-gate SiC-MOSFET with DS can be designed 25 % shallower than thatwithout DS at a Ron,sp of about 3.0 mWcm2.Therefore, it can reduce the JFET resistance and allow to shrinkthe trench depth. Optimizing the parametersof DS, the structure having DS is an effective means of reducing the JFETresistance, while reducing Eox by minimizing the depth of the trench.

scholarly journals Peculiarities of high electric field conduction in p-type diamond

2016 ◽  
Vol 108 (15) ◽  
pp. 152106 ◽  
Author(s):  
V. Mortet ◽  
D. Trémouilles ◽  
J. Bulíř ◽  
P. Hubík ◽  
L. Heller ◽  
...  
Keyword(s):  
Electric Field ◽  
High Electric Field ◽  
P Type

Study on Charge and Discharge Phenomenon of Lithium Ion Battery under High Electric Field

2020 ◽  
Vol 140 (8) ◽  
pp. 650-655
Author(s):  
Shoki Tsuji ◽  
Yoji Fujita ◽  
Hiroaki Urushibata ◽  
Akihiko Kono ◽  
Ryoichi Hanaoka ◽  
...  
Keyword(s):  
Electric Field ◽  
Lithium Ion Battery ◽  
Lithium Ion ◽  
High Electric Field

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Analysis of Electric Field and Current Density for Different Electrode Configuration of XLPE Insulation

2018 ◽  
Vol 7 (3.36) ◽  
pp. 127 ◽  
Author(s):  
Nishanthi Sunthrasakaran ◽  
Nor Akmal Mohd Jamail ◽  
Qamarul Ezani Kamarudin ◽  
Sujeetha Gunabalan
Keyword(s):  
Electric Field ◽  
Power System ◽  
Field Distribution ◽  
High Voltage ◽  
Current Density ◽  
Electric Field Distribution ◽  
Electrical Power ◽  
High Electric Field ◽  
Electrode Configuration ◽  
Maximum Electric Field

The most important aspect influencing the circumstance and characteristics of electrical discharges is the distribution of electric field in the gap of electrodes. The study of discharge performance requires details on the variation of maximum electric field around the electrode. In electrical power system, the insulation of high voltage power system usually subjected with high electric field. The high electric field causes the degradation performance of insulation and electrical breakdown start to occur. Generally, the standard sphere gaps widely used for protective device in electrical power equipment. This project is study about the electric field distribution and current density for different electrode configuration with XLPE barrier. Hence, the different electrode configuration influences the electric field distribution. This project mainly involves the simulation in order to evaluate the maximum electric field for different electrode configuration. Finite Element Method (FEM) software has been used in this project to perform the simulation. This project also discusses the breakdown characteristics of the XLPE. The accurate evaluation of electric field distribution and maximum electric field is an essential for the determination of discharge behavior of high voltage apparatus and components. The degree of uniformity is very low for pointed rod-plane when compared to other two electrode configurations. The non- uniform electric distribution creates electrical stress within the surface of dielectric barrier. As a conclusion, when the gap distance between the electrodes increase the electric field decrease.  

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