Erroneous p-type assignment by Hall effect measurements in annealed ZnO films grown on InP substrate

2013 ◽  
Vol 113 (16) ◽  
pp. 164508 ◽  
Author(s):  
R. Macaluso ◽  
M. Mosca ◽  
C. Calì ◽  
F. Di Franco ◽  
M. Santamaria ◽  
...  
Keyword(s):  
Hall Effect ◽  
Zno Films ◽  
Type Assignment ◽  
Inp Substrate ◽  
Hall Effect Measurements ◽  
P Type

Fabrication and Characterization of Transparent P-Type ZnO Films Obtained by In Situ Oxidation of Sputtering Zn3N2 :Al

2011 ◽  
Vol 194-196 ◽  
pp. 2435-2439
Author(s):  
Jun Zhang ◽  
Le Xi Shao ◽  
Wei Xie ◽  
Chang Wei Zou
Keyword(s):  
Hall Effect ◽  
Hole Concentration ◽  
Visible Region ◽  
Optical Transmittance ◽  
Zno Films ◽  
Low Resistivity ◽  
Hall Effect Measurements ◽  
Quartz Glasses ◽  
P Type

Nitrogen and Aluminum co-doped ZnO thin films were prepared by In Situ thermal oxidation of RF magnetron sputtered Zn3N2:Al films on quartz glasses. The structural, optical and electrical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical transmittance, photoluminescence (PL) and Hall effect measurements. XRD analyses revealed that Zn3N2:Al films entirely transformed into ZnO films after annealing in oxygen at 500 °C for one hour. Hall effect measurements confirmed p-type conduction in ZnO films with a low resistivity of 34.8Ω cm, a high hole concentration of 3.26×1017 cm-3 and a Hall mobility of 2.3 cm2/Vs. Optical transmission spectra shows that the films are highly transparent in the visible region . Our results demonstrate a promising approach to fabricate low resistivity p-type ZnO.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 6034-6040 ◽  
Author(s):  
Hideharu Matsuura ◽  
Yoshitsugu Uchida ◽  
Tadashi Hisamatsu ◽  
Sumio Matsuda
Keyword(s):  
Hall Effect ◽  
Type Silicon ◽  
Hall Effect Measurements ◽  
P Type

scholarly journals Retraction: “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”

2016 ◽  
Vol 55 (11) ◽  
pp. 119201
Author(s):  
Masahiro Horita ◽  
Shinya Takashima ◽  
Ryo Tanaka ◽  
Hideaki Matsuyama ◽  
Katsunori Ueno ◽  
...  
Keyword(s):  
Hall Effect ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hall Effect Measurements ◽  
P Type

Temperature-dependent Hall-effect measurements of p-type multicrystalline compensated solar grade silicon

2012 ◽  
Vol 21 (7) ◽  
pp. 1469-1477 ◽  
Author(s):  
Chiara Modanese ◽  
Maurizio Acciarri ◽  
Simona Binetti ◽  
Anne-Karin Søiland ◽  
Marisa Di Sabatino ◽  
...  
Keyword(s):  
Hall Effect ◽  
Solar Grade Silicon ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
Grade Silicon ◽  
P Type

scholarly journals Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience

Crystals ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 204 ◽  
Author(s):  
Xingyou Chen ◽  
Zhenzhong Zhang ◽  
Yunyan Zhang ◽  
Bin Yao ◽  
Binghui Li ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Molecular Beam ◽  
Green Emission ◽  
Growth Conditions ◽  
Oxygen Radical ◽  
Zno Films ◽  
Nitrogen Doped ◽  
Hall Effect Measurements ◽  
Doped Zno ◽  
P Type

Nitrogen-doped ZnO thin films were grown on a-plane Al2O3 by plasma-assisted molecular beam epitaxy. Hall-effect measurements indicated that the nitrogen-doped ZnO films showed p-type behavior first, then n-type, with the growth conditions changing from oxygen-radical-rich to oxygen-radical-deficient ambience, accompanied with the increase of the N/O ratio in the plasmas. The increasing green emission in the low temperature photoluminescence spectra, related to single ionized oxygen vacancy in ZnO, was ascribed to the decrease of active oxygen atoms in the precursor plasmas. CN complex, a donor defect with low formation energy, was demonstrated to be easily introduced into ZnO under O-radical-deficient ambience, which compensated the nitrogen-related acceptor, along with the oxygen vacancy.

Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC

2004 ◽  
Vol 457-460 ◽  
pp. 677-680 ◽  
Author(s):  
L. Kasamakova-Kolaklieva ◽  
L. Storasta ◽  
Ivan G. Ivanov ◽  
Björn Magnusson ◽  
Sylvie Contreras ◽  
...  
Keyword(s):  
Hall Effect ◽  
Temperature Dependent ◽  
Hall Effect Measurements ◽  
P Type

Synthesis, Characterization and Hall Effect Measurements of Nanocrystalline ZnO Thin Films

2012 ◽  
Vol 510-511 ◽  
pp. 186-193 ◽  
Author(s):  
Ashari Maqsood ◽  
M. Islam ◽  
M. Ikram ◽  
S. Salam ◽  
S. Ameer
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Morphological Studies ◽  
Hall Effect Measurements ◽  
Scherrer Formula

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.

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