The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.
High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm