Defects and Strain in GexSi1−x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

1989 ◽  
Vol 148 ◽  
Author(s):  
K. H. Jung ◽  
Y. M. Kim ◽  
H. G. Chun ◽  
D. L. Kwong ◽  
L. Rabenberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Misfit Dislocation ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Dislocation Loops ◽  
Si Substrates ◽  
Plane View

ABSTRACTWe have grown single and multi-layer epitaxial GexSi1−x/Si structures by RTPCVD on (100)Si substrates using GeH4 and SiH2Cl2 at 900°C and 1000°C with SiH2Cl2:GeHH4 ratios of 14:1 to 95:1 at 5 Torr. Plane view TEM micrographs indicate misfit dislocation free layers were grown for Ge concentrations of up to 13%. Misfit dislocation networks aligned along <110> were formed at the interface of films with higher Ge concentrations. Plane view TEM micrographs also showed dislocation loops at the interface. When the SiH2C12:GeH4 ratio used was less than 25:1, the GexSil−x layer grew by three-dimensional nucleation, resulting in a high density of defects.

GexSil-x Layers Grown by Rapid Thermal Processing Chemical Vapor Deposition

1989 ◽  
Vol 146 ◽  
Author(s):  
K. H. Jung ◽  
Y. M. Kim ◽  
H. G. Chun ◽  
D. L. Kwong ◽  
L. Rabenberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Misfit Dislocation ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Dislocation Loops ◽  
Si Substrates ◽  
Layer Structures ◽  
Pile Up

ABSTRACTRapid thermal processing chemical vapor deposition was used to grow single and multilaye repitaxial GexSil-x/Si structures on (100)Si substrates using GeH4 and SiH2Cl2 at 900°C and 1000°C with SiH2Cl2:GeH4 ratios of 14:1 to 95:1 at 5 Torr. Misfit dislocation free layers with few threading dislocations were grown for Ge concentrations of up to 13%. Misfit dislocation networks aligned along <110> were formed at the interface of films with higher Ge concentrations. Dislocation loops were also found at the interface. GexSil-x layers grown at 1000°C were highly crystalline, but relaxed. In multi-layer structures, AES depth profiles showed Ge pile-up at the GexSi1-x/Si interface of layers with higher Ge concentrations.

Multizone Rapid Thermal Processing to Overcome Challenges in Carbon Nanotube Manufacturing by Chemical Vapor Deposition

2019 ◽  
Author(s):  
Jaegeun Lee ◽  
Moataz Abdulhafez ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned ◽  
Scalable Production

Abstract For the scalable production of commercial products based on vertically aligned carbon nanotubes (VACNTs), referred to as CNT forests, key manufacturing challenges must be overcome. In this work, we describe some of the main challenges currently facing CNT forest manufacturing, along with how we address these challenges with our custom-built rapid thermal processing chemical vapor deposition (CVD) reactor. First, the complexity of multistep processes and reaction pathways involved in CNT growth by CVD limits the control on CNT population growth dynamics. Importantly, gas-phase decomposition of hydrocarbons, formation of catalyst particles, and catalytic growth of CNTs are typically coupled. Here, we demonstrated a decoupled recipe with independent control of each step. Second, significant run-to-run variations plague CNT growth by CVD. To improve growth consistency, we designed various measures to remove oxygen-containing molecules from the reactor, including air baking between runs, dynamic pumping down cycles, and low-pressure baking before growth. Third, real-time measurements during growth are needed for process monitoring. We implement in situ height kinetics via videography. The combination of approaches presented here has the potential to transform lab-scale CNT synthesis to robust manufacturing processes.

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