Boron‐enhanced low‐temperature Si epitaxy by rapid thermal processing chemical vapor deposition

1992 ◽  
Vol 61 (4) ◽  
pp. 474-476 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong ◽  
Y. M. Kim ◽  
R. Brennan
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy

Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 893-896 ◽  
Author(s):  
Ying Jia ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Temperature Si Epitaxy ◽  
Si Epitaxy

Multizone Rapid Thermal Processing to Overcome Challenges in Carbon Nanotube Manufacturing by Chemical Vapor Deposition

2019 ◽  
Author(s):  
Jaegeun Lee ◽  
Moataz Abdulhafez ◽  
Mostafa Bedewy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned ◽  
Scalable Production

Abstract For the scalable production of commercial products based on vertically aligned carbon nanotubes (VACNTs), referred to as CNT forests, key manufacturing challenges must be overcome. In this work, we describe some of the main challenges currently facing CNT forest manufacturing, along with how we address these challenges with our custom-built rapid thermal processing chemical vapor deposition (CVD) reactor. First, the complexity of multistep processes and reaction pathways involved in CNT growth by CVD limits the control on CNT population growth dynamics. Importantly, gas-phase decomposition of hydrocarbons, formation of catalyst particles, and catalytic growth of CNTs are typically coupled. Here, we demonstrated a decoupled recipe with independent control of each step. Second, significant run-to-run variations plague CNT growth by CVD. To improve growth consistency, we designed various measures to remove oxygen-containing molecules from the reactor, including air baking between runs, dynamic pumping down cycles, and low-pressure baking before growth. Third, real-time measurements during growth are needed for process monitoring. We implement in situ height kinetics via videography. The combination of approaches presented here has the potential to transform lab-scale CNT synthesis to robust manufacturing processes.

Sign in / Sign up

Export Citation Format

Share Document