Reactive Ion Etching of Indium-Based III-V Materials using CH4-H2-Ar Mixtures

1988 ◽  
Vol 144 ◽  
Author(s):  
A. Fathimulla ◽  
T. Loughran ◽  
J. Bates
Keyword(s):  
Vapor Pressure ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Indium Chloride ◽  
Ion Etching ◽  
Group Iii ◽  
Argon Mixture ◽  
Organometallic Group

Dry etching of indium-based III–V materials in chlorine-based gases is difficult because of the low vapor pressure of the indium chloride by-product. Recently, reactive ion etching of InP(1,2), and GaAs(3,4) using methane, hydrogen and argon mixture in which volatile organometallic group III compounds are formed has been employed. In this paper, we report the reactive ion etching of indium-based materials using CH4:H2:Ar and SiCl4:Ar mixtures.

In-situAfter-treatment Using Low-energy Dry-etching with a CF4/O2Gas Mixture to Remove Reactive Ion Etching Damage

1998 ◽  
Vol 37 (Part 1, No. 4B) ◽  
pp. 2330-2336 ◽  
Author(s):  
Miyako Matsui ◽  
Fumihiko Uchida ◽  
Masayuki Kojima ◽  
Takafumi Tokunaga ◽  
Kazuo Yamazaki ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Dry Etching ◽  
Low Energy ◽  
Ion Etching

Dry Etching Damage in GaAs and Al0.22Ga0.78As

1986 ◽  
Vol 76 ◽  
Author(s):  
D. Kirillov ◽  
C. B. Cooper ◽  
R. A. Powell
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Lattice ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Type Material ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Phonon Spectra ◽  
Ar Plasma

ABSTRACTReactive ion etching induced damage in GaAs and Al0.22Ga0.78As was studied using Raman spectroscopy. The phonon spectra of undoped materials allow evaluation of damage to the crystal lattice and the coupled plasmonphonon spectra of n-type material provide a sensitive probe of electrical characteristics. Studies were made of layers exposed to plasmas of Ar, SF6 and SiCl4. Conditions for low damage Ar plasma cleaning and for dielectric cap removal by SF6 were established. Etching in the SiCl4 plasma generally produced strong damage, although low damage etching was observed in a few cases.

Magnetron reactive ion etching of group III‐nitride ternary alloys

1996 ◽  
Vol 14 (3) ◽  
pp. 1046-1049 ◽  
Author(s):  
G. F. McLane ◽  
T. Monahan ◽  
D. W. Eckart ◽  
S. J. Pearton ◽  
C. R. Abernathy
Keyword(s):  
Reactive Ion Etching ◽  
Ternary Alloys ◽  
Ion Etching ◽  
Group Iii ◽  
Group Iii Nitride

Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process

2010 ◽  
Vol 16 (5) ◽  
pp. 863-870 ◽  
Author(s):  
Ü. Sökmen ◽  
A. Stranz ◽  
S. Fündling ◽  
S. Merzsch ◽  
R. Neumann ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Dry Etching ◽  
Etching Process ◽  
Ion Etching

Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7650-7654 ◽  
Author(s):  
Tadashi Saitoh ◽  
Tetsuomi Sogawa ◽  
Hiroshi Kanbe
Keyword(s):  
Low Temperature ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Etching

Ion-Beam Milling Materials with Applications to TEM Specimen Preparation

1996 ◽  
Vol 54 ◽  
pp. 266-267
Author(s):  
Ron Anderson
Keyword(s):  
Glow Discharge ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Surface Cleaning ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Physical Sciences ◽  
Ion Etching ◽  
Ion Beam Etching

For the last thirty years, ion milling has been an indispensable part of preparing TEM specimens in the physical sciences. While great improvements have been made in our ability to thin most materials to the point where ion milling may not be a requirement, there will still be a need to utilize ion milling to clean and polish specimens and to provide small amounts of incremental thinning as needed. Thanks mainly to the work of Bama we now understand a great deal about the physics of ion milling. We also benefit from the works of a number of investigators who have studied the artifacts produced by ion milling (see Barber for a review).Ion milling is a subset of the topic “dry etching,” which consists of two major categories: glow discharge methods and ion beam methods. Glow discharge methods include plasma etching, reactive ion etching, and glow discharge sputter etching. These techniques have little application in TEM specimen preparation aside from surface cleaning. The reactive ion etching literature is a source for suggesting gas/specimen combinations to perform chemically-assisted ion beam etching (CAIBE), to be discussed below. The other major dry etching category, ion beam methods, includes ion milling, reactive ion beam etching, and CAIBE.

Reactive Ion Etching of Copper with SiCl4 and CCl2F2

1990 ◽  
Vol 201 ◽  
Author(s):  
B. J. Howard ◽  
S. K. Wolterman ◽  
W. J. Yoo ◽  
B. Gittleman ◽  
CH. SteinbrÜchel
Keyword(s):  
High Temperature ◽  
Substrate Temperature ◽  
Amorphous Carbon ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Gas Composition ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Etch Rates ◽  
Interconnect Material

AbstractCopper may become an alternative to aluminum as an interconnect material in future multilevel metallization schemes if it is possible to pattern Cu by dry etching in a manufacturable process. Here we report results on the reactive ion etching of Cu in SiCl4 /Ar, SiCl4/N2, and CCl2F2/Ar plasmas. Etch rates have been investigated as a function of various plasma parameters, such as gas composition, pressure, etc., and substrate temperature. We have obtained etch rates as high as 850 Å /min with SiCl4/N2 and a substrate temperature of ∼ 200 ° C. Also, it appears feasible to pattern Cu anisotropically using either polyimide or amorphous carbon as a high-temperature etch mask.

Dry Etching of Sol-Gel Pzt

1998 ◽  
Vol 546 ◽  
Author(s):  
R. Zeto ◽  
B. Rod ◽  
M. Dubey ◽  
M. Ervin ◽  
J. Conrad ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Etch Rate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Milling ◽  
Ion Etching ◽  
Wide Range ◽  
Etch Rates ◽  
Argon Ion

AbstractTwo techniques for dry etching of sol-gel lead zirconate titanate (PZT 52/48) thin films were investigated: reactive ion etching and argon ion milling. Etched profiles were characterized by scanning electron microscopy. For reactive ion etching, a parallel plate etcher was used with HC2ClF4, an environmentally safe etch gas, in a process described by other researchers. Etch rates were measured and compared as a function of electrode shield material (ardel, graphite, alumina) and RF input power (100 to 500 W). These etch rates varied from 10 to 100 nm/min. Reactive ion etched sidewall angles 12° off normal were consistently produced over a wide range of RF powers and etch times, but overetching was required to produce a clean sidewall. For argon ion milling, a 300 mA/500 V beam 40° off normal to the substrate operating in a 72 mPa argon pressure was used. These ion milling conditions produced an etch rate of 250 nm/min with a sidewall slope angle of about 70°. The ion milling etch rate for sol-gel PZT was significantly faster than rates reported for bulk PZT. The 500 nm thick PZT films used in this study were prepared by the sol-gel process that used methoxyethanol solvent, spin coating on t/Ti/SiO2 silicon substrates, and rapid thermal annealing for 30 s at 650 °C for crystallization of the perovskite phase.

scholarly journals Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

2011 ◽  
Vol 679-680 ◽  
pp. 477-480 ◽  
Author(s):  
Mihai Lazar ◽  
Fabrice Enoch ◽  
Farah Laariedh ◽  
Dominique Planson ◽  
Pierre Brosselard
Keyword(s):  
Surface State ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Etching Process ◽  
Boiling Temperature ◽  
Ion Etching ◽  
Mask Design ◽  
Thick Photoresist ◽  
Etched Surface ◽  
O2 Plasma

The roughness of etched SiC surfaces must be minimized to obtain surfaces with a smooth aspect, avoiding micromasking artifacts originating from re-deposited particles during the etching process. Four varieties of masks, Al, Ni, Si and C, were deposited on the SiC surface by photolithographic process. The C structures were formed by annealing conversion of patterned thick photoresist. On these surfaces, dry etching was performed with an SF6/O2 plasma produced in a Reactive-Ion-Etching (RIE) reactor. Although a better aspect of the surface is obtained with Ni in comparison with Al mask, micromasking could also occur even with Ni if the mask design was not enough spaced out. With C and Si masks, which produce fluorides species with negative boiling temperature, smooth etched surface was obtained without micromasking, even for tight masks covering up to 90% of the SiC surface.

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