Magnetron reactive ion etching of group III‐nitride ternary alloys

1996 ◽  
Vol 14 (3) ◽  
pp. 1046-1049 ◽  
Author(s):  
G. F. McLane ◽  
T. Monahan ◽  
D. W. Eckart ◽  
S. J. Pearton ◽  
C. R. Abernathy
Keyword(s):  
Reactive Ion Etching ◽  
Ternary Alloys ◽  
Ion Etching ◽  
Group Iii ◽  
Group Iii Nitride

scholarly journals Crystal structure of rare earth and group III nitride alloys by ab initio calculations

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Maciej J. Winiarski ◽  
Dorota A. Kowalska
Keyword(s):  
Rare Earth ◽  
Density Functional ◽  
Metastable Phase ◽  
Rare Earth Ions ◽  
Ternary Alloys ◽  
Wurtzite Phase ◽  
Functional Theory ◽  
Group Iii ◽  
The Density Functional Theory ◽  
Group Iii Nitride

Abstract The ground state phases of ternary alloys of rare earth and group III nitride semiconductors have been investigated within the density functional theory. The most energetically favorable crystal phases among possible cubic and hexagonal structures, i.e., the rock salt, zinc blende, wurtzite, and hexagonal BN, were determined. The type of a unit cell and the lattice parameters of the materials are presented as a function of their composition. Furthermore, effects of strain on ground states of group III and rare earth nitride materials are discussed. The findings presented in this work discloses the wurtzite type materials as being stable with relatively low contents of rare earth elements. It is expected that the wurtzite phase will be very persistent only in the La-based systems. Nevertheless, the two-dimensional hexagonal atomic layers are revealed as being a metastable phase for all alloys studied. This finding supports the conclusion of previous experimental reports for Sc-doped GaN systems that the presence of rare earth ions in group III nitride materials leads to flattening of the wurtzite type layers.

Reactive Ion Etching of Indium-Based III-V Materials using CH4-H2-Ar Mixtures

1988 ◽  
Vol 144 ◽  
Author(s):  
A. Fathimulla ◽  
T. Loughran ◽  
J. Bates
Keyword(s):  
Vapor Pressure ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Indium Chloride ◽  
Ion Etching ◽  
Group Iii ◽  
Argon Mixture ◽  
Organometallic Group

Dry etching of indium-based III–V materials in chlorine-based gases is difficult because of the low vapor pressure of the indium chloride by-product. Recently, reactive ion etching of InP(1,2), and GaAs(3,4) using methane, hydrogen and argon mixture in which volatile organometallic group III compounds are formed has been employed. In this paper, we report the reactive ion etching of indium-based materials using CH4:H2:Ar and SiCl4:Ar mixtures.

Synthesis and morphology evolution of indium nitride (InN) nanotubes and nanobelts by chemical vapor deposition

CrystEngComm ◽  
2019 ◽  
Vol 21 (35) ◽  
pp. 5356-5362
Author(s):  
Wenqing Song ◽  
Jiawei Si ◽  
Shaoteng Wu ◽  
Zelin Hu ◽  
Linyun Long ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Ternary Alloys ◽  
Morphology Evolution ◽  
Group Iii ◽  
Group Iii Nitride

InN can form ternary alloys with Ga or Al, which increases the versatility of group-III nitride optoelectronic devices.

Enhanced Etching of Group III–V Semiconductors by Oscillating with Sputter Etching and Reactive Ion Etching

1991 ◽  
Vol 138 (4) ◽  
pp. 1143-1146 ◽  
Author(s):  
Alexandros T. Demos ◽  
H. Scott Fogler ◽  
Hossein Etemad‐Moghadam ◽  
Michael E. Elta
Keyword(s):  
Reactive Ion Etching ◽  
Group Iii V Semiconductors ◽  
Ion Etching ◽  
Group Iii ◽  
Sputter Etching

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

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