The Effect of Oxygen in Cosputtered (Titanium + Silicon) Films

1982 ◽  
Vol 14 ◽  
Author(s):  
R. Beyers ◽  
R. Sinclair
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Microscope Images ◽  
Effect Of Oxygen ◽  
Titanium Silicon ◽  
Silicon Interface ◽  
Deposited Films

ABSTRACTThe effect of oxygen incorporation on the growth and microstructure of TiSi2 has been investigated. Cosputtered films, with Si/Ti ratios between one and three, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Both Auger electron spectroscopy, in conjunction with sputter profiling, and Rutherford backscattering spectrometry indicate that oxygen in the as-deposited films redistributes to the silicide-silicon interface upon heating. Cross sectional transmission electron microscope images show that the oxygen is present as an amorphous oxide.

New Silicon-Carbon Materials Incorporating Si4C Building Blocks

1996 ◽  
Vol 441 ◽  
Author(s):  
D. Chandrasekhar ◽  
J. Kouvetakis ◽  
J. Mc Murran ◽  
M. Todd ◽  
David J. Smith
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Precursor Chemistry ◽  
Cross Sectional ◽  
Si Substrates ◽  
Resonance Analysis ◽  
Silicon Carbon ◽  
Transmission Electron ◽  
Composition And Structure

AbstractNovel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCyth in films on (001) Si substrates. Films with carbon compositions ranging up to 20 at. % were deposited at substrate temperatures of 600–750°C using interactions of C(SiH3)4 or C(SiH2Cl)4 (C-H free precursors incorporating Si4C tetrahedra) and SiH4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.

The Effect of Copper on the Titanium-Silicon Dioxide Rbaction and the Implications for Self-Encapsulatin G. Self-Adhering Metallization Lines

1992 ◽  
Vol 260 ◽  
Author(s):  
Stephen W. Russell ◽  
Jian Li ◽  
Jay W. Strane ◽  
James W. Mayer
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Intermetallic Compound Formation ◽  
Effect Of Copper ◽  
Titanium Silicon ◽  
Ti Films

ABSTRACTCo-evaporated Cu-Ti films on thermally-oxidized Si substrates were annealed in vacuum at temperatures between 300 and 700°C. Reactions within the films and between film and substrate were monitored by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and sheet resistance. We found that, despite the competition from intermetallic compound formation, the Cu-Ti films react with SiO2 beginning at 400°C, with Ti migrating to the SiO2 interface to form both a suicide, Ti5Si3, and an oxide and to the free surface to form additional oxide. The reaction leaves relatively pristine Cu. Above 600°C, however, Cu begins to react with the underlying suicide. By comparison, pure Ti reacts with SiO2 only above ∼700°C.

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

Investigation of Pt Bottom Electrodes for "In-Situ" Deposited Pb(Zr,Ti)O3 (PZT) thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Rainer Bruchhaus ◽  
Dana Pitzer ◽  
Oliver Eibl ◽  
Uwe Scheithauer ◽  
Wolfgang Hoesler
Keyword(s):  
Elevated Temperatures ◽  
Diffusion Processes ◽  
Rutherford Backscattering Spectrometry ◽  
Layer Sequence ◽  
Si Substrates ◽  
Transmission Electron ◽  
In Situ Deposition ◽  
Electron Spectrometry ◽  
Heating Up

AbstractThe deposition of the bottom electrode plays a key role in the fabrication of ferroelectric capacitors. Processing at elevated temperatures of up to 800°C can give rise to diffusion processes and thereof formation of harmful dielectric layers.In this paper we used Rutherford backscattering spectrometry (RBS), Auger electron spectrometry (AES) and transmission electron microscopy (TEM) to study Pt/Ti/SiO2/Si substrates with various thicknesses of the Ti and Pt layers. During heating up to about 450°C in vacuum the initial layer sequence remains unchanged. However, drastic changes occur when the electrodes are exposed to Ar/O2 atmosphere during heat treatment. Oxidation induced diffusion of Ti into Pt and oxidation of Ti were observed. A Pt electrode with a 100 nm thick Ti adhesion layer proved to be suitable for the "in-situ" deposition of PZT films.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon Interface

2008 ◽  
Vol 130 (6) ◽  
Author(s):  
Patrick E. Hopkins ◽  
Pamela M. Norris ◽  
Robert J. Stevens ◽  
Thomas E. Beechem ◽  
Samuel Graham
Keyword(s):  
Electron Spectroscopy ◽  
Finite Thickness ◽  
Thermal Conductance ◽  
Phase Region ◽  
Two Phase ◽  
Thermal Boundary Conductance ◽  
Si Substrates ◽  
Interfacial Mixing ◽  
Silicon Interface ◽  
Deposition Conditions

The thermal conductance at solid-solid interfaces is becoming increasingly important in thermal considerations dealing with devices on nanometer length scales. Specifically, interdiffusion or mixing around the interface, which is generally ignored, must be taken into account when the characteristic lengths of the devices are on the order of the thickness of this mixing region. To study the effect of this interfacial mixing on thermal conductance, a series of Cr films is grown on Si substrates subject to various deposition conditions to control the growth around the Cr∕Si boundary. The Cr∕Si interfaces are characterized with Auger electron spectroscopy. The thermal boundary conductance (hBD) is measured with the transient thermoreflectance technique. Values of hBD are found to vary with both the thickness of the mixing region and the rate of compositional change in the mixing region. The effects of the varying mixing regions in each sample on hBD are discussed, and the results are compared to the diffuse mismatch model (DMM) and the virtual crystal DMM (VCDMM), which takes into account the effects of a two-phase region of finite thickness around the interface on hBD. An excellent agreement is shown between the measured hBD and that predicted by the VCDMM for a change in thickness of the two-phase region around the interface.

Study of “Reverse Annealing” of Boron Under Low Temperature Lamp Anneals

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Huang ◽  
R. J. Jaccodine
Keyword(s):  
Annealing Temperature ◽  
Halogen Lamp ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Temperature Range ◽  
Silicon Crystals ◽  
Float Zone ◽  
Transmission Electron ◽  
Effect Of Oxygen ◽  
Tungsten Halogen Lamp

ABSTRACTThe reverse annealing of ion implanted boron, namely, the decrease in the concentration of electrically active boron as the isochronal annealing temperature increases, occurs in the temperature range from 550 to 650°C during conventional furnace heating. In this study, silicon crystals were boron implanted at 50 Kev to a dose of 1×1015 cm-2 followed by both furnace and tungsten-halogen lamp annealing in the reverse annealing temperature range. Cross-sectional Transmission electron microscopic (TEM) technique was used to examine the microstructural changes during annealing as a function of depth. Sheet resistance measurements gave a quick check of the electrical properties, while spreading resistance profiling with shallow angle lapping and Hall measurements reveals the mobility and carrier concentration as a function of depth. Czochralski and Float Zone crystals were studied to examine the effect of oxygen. Tungsten-halogen lamp thermal processing was found to have a more pronounced effect on the annealing of secondary defects than did furnace annealing. The reverse annealing of boron was eliminated completely for lamp annealing time as short as 60 seconds.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Nanomechanical Properties and Nanostructure of CMG and CMP Machined Si Substrates

2008 ◽  
Vol 381-382 ◽  
pp. 525-528 ◽  
Author(s):  
B.L. Wang ◽  
Han Huang ◽  
Jin Zou ◽  
Li Bo Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Transmission Electron Microscopy Analysis ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Transmission Electron ◽  
Electron Microscopy Analysis

Silicon (100) substrates machined by chemo-mechanical-grinding (CMG) and chemicalmechanical- polishing (CMP) were investigated using atomic force microscopy, cross-sectional transmission electron microscopy and nanoindentation. It was found that the substrate surface after CMG was slightly better than machined by CMP in terms of roughness. The transmission electron microscopy analysis showed that the CMG-generated subsurface was defect-free, but the CMP specimen had a crystalline layer of about 4 nm in thickness on the top of the silicon lattice as evidenced by the extra diffraction spots. Nanoindentation results indicated that there exists a slight difference in mechanical properties between the CMG and CMP machined substrates.

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