Study of “Reverse Annealing” of Boron Under Low Temperature Lamp Anneals

1985 ◽  
Vol 52 ◽  
Author(s):  
J. Huang ◽  
R. J. Jaccodine
Keyword(s):  
Annealing Temperature ◽  
Halogen Lamp ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Temperature Range ◽  
Silicon Crystals ◽  
Float Zone ◽  
Transmission Electron ◽  
Effect Of Oxygen ◽  
Tungsten Halogen Lamp

ABSTRACTThe reverse annealing of ion implanted boron, namely, the decrease in the concentration of electrically active boron as the isochronal annealing temperature increases, occurs in the temperature range from 550 to 650°C during conventional furnace heating. In this study, silicon crystals were boron implanted at 50 Kev to a dose of 1×1015 cm-2 followed by both furnace and tungsten-halogen lamp annealing in the reverse annealing temperature range. Cross-sectional Transmission electron microscopic (TEM) technique was used to examine the microstructural changes during annealing as a function of depth. Sheet resistance measurements gave a quick check of the electrical properties, while spreading resistance profiling with shallow angle lapping and Hall measurements reveals the mobility and carrier concentration as a function of depth. Czochralski and Float Zone crystals were studied to examine the effect of oxygen. Tungsten-halogen lamp thermal processing was found to have a more pronounced effect on the annealing of secondary defects than did furnace annealing. The reverse annealing of boron was eliminated completely for lamp annealing time as short as 60 seconds.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

scholarly journals Exfoliation Resistance, Microstructure, and Oxide Formation Mechanisms of the White Oxide Layer on CP Ti and Ti–Nb–Ta–Zr Alloys

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6599
Author(s):  
Eri Miura-Fujiwara ◽  
Soichiro Yamada ◽  
Keisuke Mizushima ◽  
Masahiko Nishijima ◽  
Yoshimi Watanabe ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Fine Particles ◽  
Interfacial Microstructure ◽  
Formation Mechanisms ◽  
Oxide Formation ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Frictional Coefficients ◽  
Cp Ti

We found that specific biomedical Ti and its alloys, such as CP Ti, Ti–29Nb–13Ta–4.6Zr, and Ti–36Nb–2Ta–3Zr–0.3O, form a bright white oxide layer after a particular oxidation heat treatment. In this paper, the interfacial microstructure of the oxide layer on Ti–29Nb–13Ta–4.6Zr and the exfoliation resistance of commercially pure (CP) Ti, Ti–29Nb–13Ta–4.6Zr, and Ti–36Nb–2Ta–3Zr–0.3O were investigated. The alloys investigated were oxidized at 1273 or 1323 K for 0.3–3.6 ks in an air furnace. The exfoliation stress of the oxide layer was high in Ti–29Nb–13Ta–4.6Zr and Ti–36Nb–2Ta–3Zr–0.3O, and the maximum exfoliation stress was as high as 70 MPa, which is almost the same as the stress exhibited by epoxy adhesives, whereas the exfoliation stress of the oxide layer on CP Ti was less than 7 MPa, regardless of duration time. The nanoindentation hardness and frictional coefficients of the oxide layer on Ti–29Nb–13Ta–4.6Zr suggested that the oxide layer was hard and robust enough for artificial tooth coating. The cross-sectional transmission electron microscopic observations of the microstructure of oxidized Ti–29Nb–13Ta–4.6Zr revealed that a continuous oxide layer formed on the surface of the alloys. The Au marker method revealed that both in- and out-diffusion occur during oxidation in Ti–29Nb–13Ta–4.6Zr and Ti–36Nb–2Ta–3Zr–0.3O, whereas only out-diffusion governs oxidation in CP Ti. The obtained results indicate that the high exfoliation resistance of the oxide layer on Ti–29Nb–13Ta–4.6Zr and Ti-36Nb-2Ta-3Zr-0.3O are attributed to their dense microstructures composing of fine particles, and a composition-graded interfacial microstructure. On the basis of the results of our microstructural observations, the oxide formation mechanism of the Ti–Nb–Ta–Zr alloy is discussed.

Influence of Rapid Thermal Annealing on Shallow BF2 Implantation into Pre-Amorphized Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
W. Maszara ◽  
C. Carter ◽  
D. K. Sadana ◽  
J. Liu ◽  
V. Ozguz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Structural Defects ◽  
Structural Quality ◽  
Halogen Lamp ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTLow energy, shallow BF2+ implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF2+ implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.

dLow Temperature of formation of Nickel Germanide by reaction of Nickel and Crystalline Germanium

2014 ◽  
Vol 1655 ◽  
Author(s):  
Fahid Algahtani ◽  
Patrick W Leech ◽  
Geoffrey K Reeves ◽  
Anthony S Holland ◽  
Mark Blackford ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Van Der Pauw ◽  
Heated Stage

ABSTRACTThe formation of nickel germanide has been examined over a range of low temperatures (200-400 °C) in an attempt to minimize the thermal budget for the process. Cross-sectional Transmission Electron Microscopy (TEM) was used to determine the texture of the germanide layer and the morphology and constituent composition of the Ge/NiGe interface. The onset and completion of reaction between Ni and Ge were identified by means of a heated stage in combination with in-situ x-ray diffraction (XRD) measurements. The stages of reaction were also monitored using measurements of sheet resistance of the germanides by the Van der Pauw technique. The results have shown that the minimum temperature for the initiation of reaction of Ni and Ge to form NiGe was 225 °C. However, an annealing temperature > 275 °C was necessary for the extensive (and practical) formation of NiGe. Between 200 and 300 °C, the duration of annealing required for the formation of NiGe was significantly longer than at higher temperatures. The stoichiometry of the germanide was very close to NiGe (1:1) as determined using energy dispersive spectroscopy (EDS).

OPTICAL PROPERTIES OF CARBON CLUSTERS EMBEDDED IN SiO2 FILMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1095-1100 ◽  
Author(s):  
S. HAYASHI ◽  
M. KATAOKA ◽  
H. KOSHIDA ◽  
K. YAMAMOTO
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Interstellar Extinction ◽  
Carbon Clusters ◽  
Electron Microscopic ◽  
Carbon Doped ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Deposited Films

Raman spectra were measured for carbon-doped SiO 2 thin films prepared by an rf cosputtering method. The changes in the spectra were systematically studied as a function of the annealing temperature. From a detailed analysis of the spectra, the following conclusions were drawn. In the as-deposited films, very small carbon clusters are embedded in the SiO 2 matrices. When the films are annealed at 600°C, graphite-like sp 2 bonds begin to develop in the clusters. Upon annealing with higher temperatures, the size of sp 2 bond clusters increases. However, the growth of graphite microcrystals can be ruled out, since high-resolution transmission electron microscopic images of the samples annealed at 1000°C do not show lattice fringes due to graphite microcrystals. The samples annealed at 1000°C were found to exhibit an extinction hump around 220 nm, very similar to that seen in the interstellar extinction spectra.

Characterization of the Al/RuO2 Interface Upon Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
Quat T. Vu ◽  
E. Kolawa ◽  
M-A. Nicolet
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Electrical Measurement ◽  
Specific Contact Resistance ◽  
Annealing Duration ◽  
Type Model ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Specific Contact

ABSTRACTWe have characterized the Al/RuO2 interface after annealing at temperatures in the range 450° C-550° C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microscopy, and electrical four point probe measurement of specially designed structures. The electrical measurement yields the specific contact resistance of the interface by applying a transmission line type model developped for this purpose. An interfacial aluminum-oxygen polycrystalline compound is shown to grow with annealing temperature and duration, with a concurrent reduction of a thin layer of RuO2. However, the specific contact resistance between Al and RuO2 is found to decrease with annealing duration at 500°C. This last result indicates that the interfacial reaction does not lead to an insulating interface as could have been expected if the growth were pure and dense A12O3.

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