The Effect of Copper on the Titanium-Silicon Dioxide Rbaction and the Implications for Self-Encapsulatin G. Self-Adhering Metallization Lines

1992 ◽  
Vol 260 ◽  
Author(s):  
Stephen W. Russell ◽  
Jian Li ◽  
Jay W. Strane ◽  
James W. Mayer
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Intermetallic Compound Formation ◽  
Effect Of Copper ◽  
Titanium Silicon ◽  
Ti Films

ABSTRACTCo-evaporated Cu-Ti films on thermally-oxidized Si substrates were annealed in vacuum at temperatures between 300 and 700°C. Reactions within the films and between film and substrate were monitored by Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and sheet resistance. We found that, despite the competition from intermetallic compound formation, the Cu-Ti films react with SiO2 beginning at 400°C, with Ti migrating to the SiO2 interface to form both a suicide, Ti5Si3, and an oxide and to the free surface to form additional oxide. The reaction leaves relatively pristine Cu. Above 600°C, however, Cu begins to react with the underlying suicide. By comparison, pure Ti reacts with SiO2 only above ∼700°C.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

ABSTRACTSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Room Temperature Self-Annealing of Electroplated and Sputtered Copper Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Michelle Chen ◽  
Suraj Rengarajan ◽  
Peter Hey ◽  
Yezdi Dordi ◽  
Hong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Copper Film ◽  
Copper Films ◽  
Organic Additives ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Electroplated Copper ◽  
Effect Of Copper

AbstractSelf-annealing properties of electroplated and sputtered copper films at room temperature were investigated in this study, in particular, the effect of copper film thickness, electrolyte systems used, as well as their level of organic additives for electroplating. Real-time grain growth was observed by transmission electron microscopy. Sheet resistance and X-ray diffraction measurements further confirmed the recrystallization of the electroplated copper film with time. The recrystallization of electroplated films was then compared with that of sputtered copper films.

scholarly journals Retention Characteristics of CBTi144 Thin Films Explained by Means of X-Ray Photoemission Spectroscopy

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
G. Biasotto ◽  
A. Z. Simões ◽  
C. S. Riccardi ◽  
M. A. Zaghete ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Polar Axis ◽  
Photoemission Spectroscopy ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Coating Method ◽  
Retention Characteristics

CaBi4Ti4O15(CBTi144) thin films were grown on Pt/Ti/SiO2/Si substrates using a soft chemical solution and spin-coating method. Structure and morphology of the films were characterized by the X-ray Diffraction (XRD), Fourier-transform infrared spectroscopy (FT-IR), Raman analysis, X-ray photoemission spectroscopy (XPS), and transmission electron microscopy (TEM). The films present a single phase of layered-structured perovskite with polar axis orient. Thea/b-axis orientation of the ferroelectric film is considered to be associated with the preferred orientation of the Pt bottom electrode. XPS measurements were employed to understand the nature of defects on the retention behavior of CBTi144 films. We have observed that the main source of retention-free characteristic of the capacitors is the oxygen environment in the CBTi144 lattice.

Epitaxial Growth of 3C-SiC by Pulsed Laser Deposition

1995 ◽  
Vol 410 ◽  
Author(s):  
J. E. Cosgrove ◽  
P. A. Rosenthal ◽  
D. Hamblen ◽  
D. B. Fenner ◽  
C. Yang
Keyword(s):  
Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Auger Microprobe ◽  
Substrate Types

ABSTRACTWe have grown thin films of SiC by pulsed laser deposition on silicon (100) and vicinal and non-vicinal 6H SiC (0001) substrates using a quadrupled YAG laser and a high purity dense polycrystalline SiC target. Epitaxy on all three substrate types was confirmed by x-ray diffraction, transmission electron microscopy and electron diffraction. Composition of the films was measured by Rutherford backscattering spectrometry and Scanning Auger Microprobe.

Epitaxial Ferroelectric Heterostructures of Isotropic Metallc Oxide (SrRuO3) and Pb(Zr0.52Ti0.48)O3

1993 ◽  
Vol 310 ◽  
Author(s):  
C. B. Eom ◽  
R.B. Van Dover ◽  
Julia M. Phillips ◽  
R.M. Fleming ◽  
R.J. Cava ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Metallic Oxide ◽  
High Crystalline Quality ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Fatigue Characteristics ◽  
Large Remnant Polarization ◽  
Coherent Interfaces

AbstractWe have fabricated epitaxial ferroelectric heterostructures of isotropic metallic oxide (SrRuO3) and ferroelectric thin films [SrRuO3/Pb(Zr0.52Ti0.48)O3 /SrRuO3] on (100) SrTiO3 and YSZ buffer layered Si substrates by 90° off-axis sputtering. These heterostructures have high crystalline quality and coherent interfaces as revealed by X-ray diffraction, Rutherford backscattering spectroscopy and cross-sectional transmission electron microscopy. The ferroelectric layers exhibit superior fatigue characteristics over 1010 cycles with large remnant polarization.

Synthesis of SiOx Nanowires through the Thermal Heating of Au-Coated Si Substrates

2007 ◽  
Vol 119 ◽  
pp. 79-82
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim ◽  
Jong Woo Lee
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Heating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Structures ◽  
Scanning Electron

We have demonstrated the growth of SiOx nanowires by the simple heating of the Au-coated Si substrates. We used X-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy to characterize the samples. The as-synthesized SiOx nanowires had amorphous structures with diameters in the range of 10-70 nm. We have discussed the possible growth mechanism.

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