New Silicon-Carbon Materials Incorporating Si4C Building Blocks

1996 ◽  
Vol 441 ◽  
Author(s):  
D. Chandrasekhar ◽  
J. Kouvetakis ◽  
J. Mc Murran ◽  
M. Todd ◽  
David J. Smith
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Precursor Chemistry ◽  
Cross Sectional ◽  
Si Substrates ◽  
Resonance Analysis ◽  
Silicon Carbon ◽  
Transmission Electron ◽  
Composition And Structure

AbstractNovel precursor chemistry and ultrahigh-vacuum chemical vapor deposition have been used to deposit Si1-yCyth in films on (001) Si substrates. Films with carbon compositions ranging up to 20 at. % were deposited at substrate temperatures of 600–750°C using interactions of C(SiH3)4 or C(SiH2Cl)4 (C-H free precursors incorporating Si4C tetrahedra) and SiH4 gas mixtures. The composition of the resulting materials was obtained by Rutherford backscattering spectrometry including carbon resonance analysis. Cross-sectional transmission electron microscopy and infrared spectroscopy were used to provide microstructural and bonding information respectively. The effect of precursor chemistry on the composition and structure of the materials is discussed.

The Effect of Oxygen in Cosputtered (Titanium + Silicon) Films

1982 ◽  
Vol 14 ◽  
Author(s):  
R. Beyers ◽  
R. Sinclair
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Microscope Images ◽  
Effect Of Oxygen ◽  
Titanium Silicon ◽  
Silicon Interface ◽  
Deposited Films

ABSTRACTThe effect of oxygen incorporation on the growth and microstructure of TiSi2 has been investigated. Cosputtered films, with Si/Ti ratios between one and three, were deposited on (100) Si substrates and reacted at temperatures from 650° to 1050°C. Both Auger electron spectroscopy, in conjunction with sputter profiling, and Rutherford backscattering spectrometry indicate that oxygen in the as-deposited films redistributes to the silicide-silicon interface upon heating. Cross sectional transmission electron microscope images show that the oxygen is present as an amorphous oxide.

Highly oriented diamond growth on positively biased Si substrates

2001 ◽  
Vol 16 (12) ◽  
pp. 3351-3354 ◽  
Author(s):  
Te-Fu Chang ◽  
Li Chang
Keyword(s):  
Electron Microscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Transmission Electron

Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-enhanced nucleation in microwave plasma chemical vapor deposition. During the biasing period, an additional glow discharge due to the dc plasma effect appeared between the electrode and the substrate. The discharge is necessary for enhanced nucleation of diamond. X-ray diffraction, scanning electron microscopy, and cross-sectional transmission electron microscopy (XTEM) were used to characterize the microstructure of the diamond films on Si. The results show the morphology of diamond grains in square shape with strong diamond (001) texture. XTEM reveals that an amorphous interlayer formed on the smooth Si surface before diamond nucleation.

Influence of Precursor Chemistry on Synthesis of Silicon-Carbon-Germanium Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
Michael Todd ◽  
John Kouvetakis ◽  
Phillip Matsunaga ◽  
D. Chandrasekhar ◽  
David Smith
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Precursor Chemistry ◽  
The Novel ◽  
Molecular Precursors ◽  
Silicon Carbon ◽  
Polycrystalline Alloys ◽  
Transmission Electron ◽  
Amorphous Sic ◽  
Secondary Ion

ABSTRACTWe describe the synthesis and use of the novel molecular precursors C (SiH3) 4, CH3GeH3and SiH3GeH3 to generate silicon-carbon-germanium materials by ultrahigh vacuum chemical vapor deposition. By using these precursors in reactions with S1H4 and GeH4 between 470°C and 650°C we obtained: 1) heteroepitaxial Si1-x-y. GexCy (y=0.04–0.06) alloys with C (SiH3) 4; (2) polycrystalline alloys with carbon compositions ranging from 2–14 at.% with CH3GeH3; (3) mixtures of diamond cubic nanocrystals (Ge, Si1-xGex) and amorphous SiC with SiH3CH2GeH3. The effect of the precursor chemistry on composition, crystallinity, and microstructure of the materials as characterized by Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) is discussed.

Investigation of Pt Bottom Electrodes for "In-Situ" Deposited Pb(Zr,Ti)O3 (PZT) thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Rainer Bruchhaus ◽  
Dana Pitzer ◽  
Oliver Eibl ◽  
Uwe Scheithauer ◽  
Wolfgang Hoesler
Keyword(s):  
Elevated Temperatures ◽  
Diffusion Processes ◽  
Rutherford Backscattering Spectrometry ◽  
Layer Sequence ◽  
Si Substrates ◽  
Transmission Electron ◽  
In Situ Deposition ◽  
Electron Spectrometry ◽  
Heating Up

AbstractThe deposition of the bottom electrode plays a key role in the fabrication of ferroelectric capacitors. Processing at elevated temperatures of up to 800°C can give rise to diffusion processes and thereof formation of harmful dielectric layers.In this paper we used Rutherford backscattering spectrometry (RBS), Auger electron spectrometry (AES) and transmission electron microscopy (TEM) to study Pt/Ti/SiO2/Si substrates with various thicknesses of the Ti and Pt layers. During heating up to about 450°C in vacuum the initial layer sequence remains unchanged. However, drastic changes occur when the electrodes are exposed to Ar/O2 atmosphere during heat treatment. Oxidation induced diffusion of Ti into Pt and oxidation of Ti were observed. A Pt electrode with a 100 nm thick Ti adhesion layer proved to be suitable for the "in-situ" deposition of PZT films.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
C. H. Lin ◽  
B. M. Yen ◽  
Haydn Chen ◽  
T. B. Wu ◽  
H. C. Kuo ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Preferential Orientation ◽  
Organic Chemical ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTHighly textured PbZrxTi1−xO3 (PZT) thin films with x= 0-0.6 were grown on LaNiO3 coated Si substrates at 600 °C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

Epitaxial Si1-xGex Films and Superlattice Structures Grown by CVD for Infrared Photodetectors

2003 ◽  
Vol 770 ◽  
Author(s):  
L. Maddiona ◽  
S. Coffa ◽  
S. Lorenti ◽  
C. Bongiorno
Keyword(s):  
Near Infrared ◽  
Chemical Vapor ◽  
Local Area ◽  
Strained Si ◽  
Cross Sectional ◽  
Active Layers ◽  
Transmission Electron ◽  
Photo Response ◽  
Superlattice Structures ◽  
On Chip

AbstractIntegration of photodetectors with high responsitivity in the near infrared (1.3-1.55 μm) on standard Si electronic circuits is important for a variety of applications in the field of on-chip, local area and long haul optical communications. In this work we report on a detailed structural and optical characterization of epitaxial Si1-xGex films and Si1-xGex /Si multilayers grown by chemical vapor deposition on (100) Si wafers. Cross-sectional transmission electron microscopy analyses show that metastable strained Si1-xGex films of few nanometer with x>40% can be deposited at low growth temperature and pressure. Absorption measurements on these films demonstrate the extension of the photo-response to 1.55 μm. Using these films as active layers Schottky integrated photodetectors have been fabricated.

Variable Angle Spectroscopic Ellipsometric Characterization of Polycrystalline Silicon thin Film Multilayer Structures

1991 ◽  
Vol 238 ◽  
Author(s):  
Paul G. Snyder ◽  
Yi-Ming Xiong ◽  
John A. Woollam ◽  
Eric R. Krosche
Keyword(s):  
Polycrystalline Silicon ◽  
Composite Layer ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Additional Information ◽  
Variable Angle ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Annealing Effects

ABSTRACTVariable angle spectroscopie ellipsometry (VASE), a nondestructive optical technique, was used to characterize two different multilayer samples, each having a low-pressure chemical vapor deposited polycrystalline silicon (poly-Si) layer. Analysis of these samples by cross-sectional transmission electron microscopy (XTEM) revealed large changes in grain size, between the undoped, as-deposited, and doped, annealed poly-Si layers. Roughness at the top of the poly-Si layers was also observed by XTEM. These features, together with the other structure parameters (thickness and composition), were analyzed ellipsometrically by fitting the measured VASE spectra with appropriate multilayer models. Each composite layer (surface overlayer, interfacial layer, and poly-Si layer) was modeled as a physical mixture, using the Bruggeman effective medium approximation. The ellipsometrically determined thicknesses were in very good agreement with the corresponding results measured by XTEM. Furthermore, VASE analysis provided additional information about the relative fractions of the constituent materials in the different composite layers. Thus, it quantitatively characterized the surface and interracial properties, and also the doping and annealing effects on the microstructure of poly-Si layers.

Observations of Domain Structure at Initial Growth Stage of PbTiO3 Thin Films Grown by Mocvd

1999 ◽  
Vol 596 ◽  
Author(s):  
H. Fujisawa ◽  
M. Shimizu ◽  
H. Niu ◽  
K. Honda ◽  
S Ohtani
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Growth Stage ◽  
Domain Walls ◽  
Chemical Vapor ◽  
Initial Growth ◽  
Continuous Film ◽  
Cross Sectional ◽  
Initial Growth Stage ◽  
Transmission Electron

AbstractDomain structure and growth mechanism of PbTiO3 thin films were investigated using a transmission electron microscopy(TEM) from the viewpoint of size effects. At initial growth stage of (111)-oriented PbTiO3 films prepared by metalorganic chemical vapor deposition(MOCVD), triangle-shaped islands were grown on Pt(111)/SiO2/Si before becoming a continuous film. Triangular islands grew gradually in a lateral dimension. This means that PbTiO3 films grew two-dimensionally at initial growth stage. In cross-sectional TEM photomicrographs, (101)-twin boundaries (90° domain walls) and inclination of {110} or {101}-plane were observed in PbTiO3 islands. This result indicates that such small PbTiO3 islands have a tetragonal structure and could have spontaneous polarization. The minimum island which had 90° domain walls was 10nm high and 18nm wide.

V-Defect and Dislocation Analysis in InGaN Multiple Quantum Wells on Patterned Sapphire Substrate

2018 ◽  
Vol 787 ◽  
pp. 37-41
Author(s):  
Huan You Wang ◽  
Qiao Lai Tan ◽  
Gui Jin
Keyword(s):  
Quantum Wells ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Cross Sectional ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Multi Quantum Well ◽  
Patterned Sapphire Substrates

InGaN/GaN multiquantum well (MQW) structures have been grown on cone-shaped patterned sapphire substrates (CPSS) by metalorganic chemical vapor deposition (MOCVD). From the transmission electron microscopy (TEM) results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the slant region of the cone pattern, they converged at the slope of the cone patterned region by staircase-upward propagation, which seems to effectively prevent TDs from vertical propagation in the trench region. The associated dislocation runs up into the overgrown GaN layer and MQW, and some (a+c) dislocations were shown to decompose inside the multi-quantum well, giving rise to a misfit segment in the c-plane and a V-shape defect. From cross-sectional TEM, we found that all V defects are not always connected with TDs at their bottom, some V defects are generated from the stacking mismatch boundaries induced by stacking faults which are formed within the MQW due to the strain relaxation.

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