Defect Structure Analysis of Thick Epitaxial Films with Very Large Lattice Mismatch: Ag/Si(1l1) and Ag/Si(001).

1988 ◽  
Vol 138 ◽  
Author(s):  
K.-H. Park ◽  
G.A. Smith ◽  
D.C. Mckenna ◽  
L. Luo ◽  
H.-S. Jin ◽  
...  
Keyword(s):  
Structure Analysis ◽  
Defect Structure ◽  
Lattice Mismatch ◽  
Epitaxial Films ◽  
Large Lattice ◽  
Large Lattice Mismatch

Effect of Substrate Misorientation on Heteroepitaxy with Large Lattice Mismatch: Ag/Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
D.C. McKenna ◽  
K.-H. Park ◽  
G.-C. Wang ◽  
G.A. Smith
Keyword(s):  
Misorientation Angle ◽  
Lattice Mismatch ◽  
Epitaxial Films ◽  
Misalignment Angle ◽  
Si Substrates ◽  
Ion Channeling ◽  
Flat Substrate ◽  
Surface Normal ◽  
Large Lattice ◽  
Large Lattice Mismatch

AbstractEpitaxial films of Ag(111) were grown by Molecular Beam Epitaxy (MBE) on small angle misoriented Si(111) substrates. The surface normal was tilted 0 to 6° away from the Si(111) axis toward the [112] direction. The structure of the films was analyzed by x-ray diffraction and MeV He+ ion channeling. Despite a large lattice mismatch, good quality epitaxial films, 600–1200 Å thick, were grown on the misoriented Si substrates. Interestingly, the angle between the Si(111) axis of the substrate and the Ag(111) axis of the film (the misalignment angle) is not zero. In contrast to the perfect alignment on a flat substrate, the Ag(111) axis is tilted away from the Si(111) axis toward the surface normal. Axial MeV He+ ion channeling shows the misalignment angle (up to .6°) increases with substrate misorientation angle (~1/10 substrate misorientation angle).

Growth and Characterization of CuInSe2 Epitaxial Films for Device Applications

1996 ◽  
Vol 426 ◽  
Author(s):  
S. Niki ◽  
T. Kurafuji ◽  
P. J. Fons ◽  
I. Kim ◽  
O. Hellman ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Free Exciton ◽  
Epitaxial Films ◽  
Cross Sectional ◽  
Residual Defect ◽  
Transmission Electron ◽  
Large Lattice ◽  
Device Applications ◽  
Large Lattice Mismatch ◽  
Lattice Matched

AbstractCuInSe2 (CIS) epitaxial layers have been grown on both GaAs (001) and In0.29Ga0.71 As pseudo lattice-matched substrates by molecular beam epitaxy, and characterized for device applications. Despite a large lattice mismatch of Δa/a˜2.2%, epitaxial growth of CuInSe2 has been demonstrated on GaAs (001) showing their film properties strongly dependent on the Cu/In ratio. In-rich films had a large number of twins on {112} planes, and were found to be heavily compensated. On the other hand, Cu-rich films showed distinct photoluminescence emissions indicating significantly higher film quality in comparison with In-rich films. Two dimensional reciprocal x-ray intensity area mapping and cross-sectional transmission electron microscopy showed the formation of an interfacial layer in the vicinity of the CuInSe2/GaAs interface resulting from the strain-induced interdiffusion between CuInSe2 and GaAs. Reduction in lattice mismatch to Δa/a˜0.2% by using In0.29Ga0.71As pseudo lattice-matched substrates made possible the growth of high quality CuInSe2 with predominant free exciton emissions in their photoluminescence spectra and with residual defect densities of as low as p˜l×1017cm-3 implying the growth of device quality CuInSe2 epitaxial films.

The Control of Epitaxial Growth of LiNbO3 Thin Films on R-Cut Sapphire

1991 ◽  
Vol 243 ◽  
Author(s):  
Norifumi Fujimura ◽  
Masami Kakinoki ◽  
Taichiro Ito
Keyword(s):  
Strong Influence ◽  
Lattice Mismatch ◽  
Lithium Concentration ◽  
Epitaxial Films ◽  
Rf Power ◽  
Growth Orientation ◽  
Bonded Materials ◽  
Covalently Bonded ◽  
Large Lattice ◽  
Large Lattice Mismatch

AbstractIt is argued that epitaxial films of ionically-bonded materials are more easily achieved than of covalently bonded materials. Good epitaxy can be achieved despite relatively large lattice mismatch with respect to the substrate. However, the strong influence of interfacial energy can result in difficulty in controlling the orientation of epitaxial films.The crystallographic orientation of ionically-bonded LiNbO3 films was therefore studied. Growth orientation could be controlled by paying attention to the bonding between octahedra in the structure, and to the formation of the octahedra containing lithium and niobium ions. Lithium concentration could be increased by increasing the rf power, 02 partial pressure and total gas pressure, and decreasing the substrate temperature during deposition.The orientation of the film changed from (012) to (100) via (110) by increasing the Li concentration in the film. The (012) and (100) films were epitaxial with respect to the substrate. In particular, the (100) films were of exce lent quality, being single crystalline with smooth surfaces.

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

1991 ◽  
Vol 4 (6) ◽  
pp. 217-219 ◽  
Author(s):  
S. Aboulhouda ◽  
J. P. Vilcot ◽  
M. Razeghi ◽  
D. Decoster ◽  
M. Francois ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

scholarly journals Epitaxial Growth of Germanium on Silicon for Light Emitters

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chengzhao Chen ◽  
Cheng Li ◽  
Shihao Huang ◽  
Yuanyu Zheng ◽  
Hongkai Lai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Infrared Light ◽  
Multiple Quantum ◽  
Light Emitters ◽  
Large Lattice ◽  
Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure

1996 ◽  
Vol 54 ◽  
pp. 946-947
Author(s):  
W. Qian ◽  
M. Skowronski ◽  
R. Kaspi ◽  
M. De Graef
Keyword(s):  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Extended Defects ◽  
Large Lattice ◽  
Threading Dislocation Density ◽  
Small Lattice ◽  
Large Lattice Mismatch

GaSb thin film grown on GaAs is a promising substrate for fabrication of electronic and optical devices such as infrared photodetectors. However, these two materials exhibit a 7.8% lattice constant mismatch which raises concerns about the amount of extended defects introduced during strain relaxation. It was found that, unlike small lattice mismatched systems such as InxGa1-xAs/GaAs or GexSi1-x/Si(100), the GaSb/GaAs interface consists of a quasi-periodic array of 90° misfit dislocations, and the threading dislocation density is low despite its large lattice mismatch. This paper reports on the initial stages of GaSb growth on GaAs(001) substrates by molecular beam epitaxy (MBE). In particular, we discuss the possible formation mechanism of misfit dislocations at the GaSb/GaAs(001) interface and the origin of threading dislocations in the GaSb epilayer.GaSb thin films with nominal thicknesses of 5 to 100 nm were grown on GaAs(001) by MBE at a growth rate of about 0.8 monolayers per second.

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