Determination of residual stresses in Pb(Zr0.53Ti0.47)O3 thin films with Raman spectroscopy

2001 ◽  
Vol 79 (25) ◽  
pp. 4112-4114 ◽  
Author(s):  
Wei-Hua Xu ◽  
Dexin Lu ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Residual Stresses

scholarly journals Determination of the elastic moduli and residual stresses of freestanding Au-TiW bilayer thin films by nanoindentation

2016 ◽  
Vol 106 ◽  
pp. 436-445 ◽  
Author(s):  
Matteo Ghidelli ◽  
Marco Sebastiani ◽  
Christian Collet ◽  
Raphael Guillemet
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Elastic Moduli

Calculation of Intrinsic Stresses and Elastic Moduli in Nonhomogeneous Thin Films

2000 ◽  
Vol 653 ◽  
Author(s):  
Pedro C. Andia ◽  
Francesco Costanzo ◽  
Gary L. Gray ◽  
Thomas J. Yurick
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stresses ◽  
Computer Simulations ◽  
System Application ◽  
Elastic Moduli ◽  
Particle System ◽  
Particle Systems

AbstractAn approach is presented for the determination of the residual stresses and elastic moduli of particle systems resulting from computer simulations of particle or atomic deposition. The proposed technique is based on fundamental concepts of elasticity and is capable of capturing the variation of stresses and moduli as functions of position within the system. Application to a simple particle system consisting of a deposited thin film is demonstrated.

The Determination of Mechanical Parameters and Residual Stresses for Thin Films Using Micro-Cantilever Beams

1988 ◽  
Vol 130 ◽  
Author(s):  
S. Hong ◽  
T. P. Weihs ◽  
J. C. Bravman ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Elastic Constants ◽  
Testing Machine ◽  
Elastic Response ◽  
Cantilever Beams ◽  
Mechanical Parameters ◽  
Processing Technologies ◽  
Micro Cantilever

AbstractA method for determining mechanical parameters and residual stresses for thin films is described. Multi-layer cantilever beams (LPCVD SiNx/thermal SiO2) are fabricated utilizing standard IC processing technologies and micromachining of silicon. The elastic response of the beams to imposed deflections is then measured using a Nanoindenter, a sub-micron hardness testing machine. The elastic constants of the nitride films are calculated from the force vs. deflection slope and known elastic constants of the thermal SiO2 and silicon. By measuring the curvature of the multi-layer cantilever beams with a scanning electron microscope after successive etching of the LPCVD nitride films, average and differential stresses in the films were calculated.

scholarly journals Determination of Residual Stress Fields in a Thermally Grown Oxide under Thermal Cycling Loadings, Using XRD and Raman Spectroscopy — Correlations with Microstructural States

2014 ◽  
Vol 996 ◽  
pp. 890-895
Author(s):  
Felaniaina Rakotovao ◽  
Zhao Jun Tao ◽  
Jean Luc Grosseau-Poussard ◽  
Benoit Panicaud ◽  
Gilles Bonnet ◽  
...  
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Residual Stresses ◽  
Thermally Grown Oxide ◽  
Stress Fields ◽  
Stress Release ◽  
Thermal Oxide ◽  
Long Time ◽  
Release Processes

The presence of residual stresses in thermal oxide layers has been recognized for a long time. In the present work, the mechanical fields for chromia oxide are determined either by XRD or Raman spectroscopy. In addition, the microstructure of the chromia films is investigated ant its influence on the evolution of the stress release processes is analyzed.

Micro-Raman Spectroscopy for the Determination of Local Temperature Increases in TiO2 Thin Films due to the Effect of Radiation

2016 ◽  
Vol 70 (7) ◽  
pp. 1128-1136 ◽  
Author(s):  
Juan Jesús Gallardo ◽  
Javier Navas ◽  
David Zorrilla ◽  
Rodrigo Alcántara ◽  
Diego Valor ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Local Temperature ◽  
Tio2 Thin Films ◽  
Micro Raman Spectroscopy
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