Characterization of TiN Films Prepared by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Albert L. Chang ◽  
R. A. Kant
Keyword(s):  
Ion Beam ◽  
Analytical Techniques ◽  
Deposition Process ◽  
Processing Parameters ◽  
Ion Energy ◽  
Tin Films ◽  
Tin Film ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

ABSTRACTOne of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Characterization of TiN Films Prepared by ion Beam Assisted Deposition

1988 ◽  
Vol 140 ◽  
Author(s):  
Albert L. Chang ◽  
R. A. Kant
Keyword(s):  
Ion Beam ◽  
Analytical Techniques ◽  
Deposition Process ◽  
Processing Parameters ◽  
Ion Energy ◽  
Tin Films ◽  
Tin Film ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

AbstractOne of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Compositional characterization of CrN films deposited by ion beam-assisted deposition process on stainless steel

2001 ◽  
Vol 388 (1-2) ◽  
pp. 195-200 ◽  
Author(s):  
Sanjiv Kumar ◽  
V.S Raju ◽  
R Shekhar ◽  
J Arunachalam ◽  
A.S Khanna ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Ion Beam ◽  
Deposition Process ◽  
Ion Beam Assisted Deposition ◽  
Compositional Characterization

Preparation and Characterization of Ion Beam Assisted Aluminum Oxide Films

1989 ◽  
Vol 157 ◽  
Author(s):  
James K. Hirvonen ◽  
T.G. Tetreault ◽  
G. Parker ◽  
P. Revesz ◽  
D. Land ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Ion Beam ◽  
Optical Coatings ◽  
Refractive Indices ◽  
Ion Energy ◽  
Oxygen Ion ◽  
Ion Beam Assisted Deposition ◽  
Beam Analysis ◽  
Optical Ellipsometry

ABSTRACTThe ion beam assisted deposition (IBAD) technique has been employed to make aluminum oxide optical coatings. Deposition variables include aluminum oxide evaporant to oxygen ion beam flux ratios, substrate temperature, and ion energy. Characterization included optical ellipsometry, ion beam analysis, and adhesion tests. Films deposited with the aid of ions exhibited the highest refractive indices and best adhesion to their substrates.

Vapor Deposited Thin Films and Their Densification During Ion Beam Assisted Deposition

1990 ◽  
Vol 202 ◽  
Author(s):  
T.D. Andreadis ◽  
Mervine Rosen ◽  
M.I. Haftel ◽  
J.A. Sprague
Keyword(s):  
Ion Beam ◽  
Three Dimensional ◽  
Deposition Process ◽  
Void Volume ◽  
Energetic Ions ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Recoil Atoms ◽  
Dynamics Simulations ◽  
Deposited Film

ABSTRACTA computer simulation is presented of the reduction of void volume by incident energetic ions during Ion Beam Assisted Deposition (IBAD) of thin Ge films. The objective of the work is to understand the important mechanisms of thin film densification during IBAD. The density is affected by a number of mechanisms including: absorption of recoil atoms by voids and by diffusion of residual interstitials and vacancies. Simulations of Ge deposition under Ar ion bombardment were made using the collision cascade code MARLOWE with realistic void-sizes and for beam energies up to 500 eV. MARLOWE was used to obtain void volume loss as a function of void depth, void volume, and ion energy. The fate of residual interstitials and vacancies is taken into account.In order to model IBAD it is important to be able to model the deposition process. We describe our three-dimensional Molecular Dynamics simulations of the vapor deposition of Ni on a Ni (100) surface under low atom mobility conditions. We found the deposited film to have a packing density of about 80% of the nominal value and to contain ribbon-like voids.

Ion Beam Assisted Texture Evolution during Thin Film Deposition of Metal Nitrides

2000 ◽  
Vol 647 ◽  
Author(s):  
Bernd Stritzker ◽  
Jürgen W. Gerlach ◽  
Stephan Six ◽  
Bernd Rauschenbach
Keyword(s):  
Thin Films ◽  
Defect Density ◽  
Texture Evolution ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Crystalline Quality ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

AbstractIon beam assisted deposition, i.e., the bombardment of thin films with a beam of energetic particles has become a highly developed tool for the preparation of thin films. This technique provides thin films and coatings with modified microstructure and properties. In this paper examples are presented for the modifying of the structure: in-situ modification of texture during ion beam assisted film growth and ion beam enhanced epitaxy.The biaxial alignment of titanium nitride films prepared on Si(111) by nitrogen ion beam assisted deposition at room temperature was studied. The bombardment perpendicular to the surface of the substrate causes an {001} alignment of crystallites. A 55° ion beam incidence angle produces both a {111} orientation relative to the surface and a {100} orientation relative to the ion beam. This results in a totally fixed orientation of the crystallites. The texture evolution is explained by the existence of open channeling directions.Epitaxial, hexagonal gallium nitride films were grown on c-plane sapphire by low-energy nitrogen ion beam assisted deposition (≤ 25 eV). The ion energy was chosen to be less than the corrected bulk displacement energy to avoid the formation of ion-induced point defects in the bulk. The results show that GaN films with a nearly perfect {0002} texture are formed which have superior crystalline quality than films grown without ion irradiation. The mosaicity and the defect density are reduced.By applying an assisting ion beam during pulsed laser deposition of aluminum nitride on the c-plane of sapphire, epitaxial, hexagonal films could be produced. The results prove the beneficial influence of the ion beam on the crystalline quality of the films. An optimum ion energy of 500 eV was found where the medium tilt as well as the medium twist of the crystallites was minimal.

Optimized screen-printing and SEM-FIB characterization of YSZ thin films for Solid Oxide Fuel Cells and gas sensors devices

2004 ◽  
Vol 822 ◽  
Author(s):  
A. Morata ◽  
A. Tarancón ◽  
G. Dezanneau ◽  
F. Peiró ◽  
J. R. Morante
Keyword(s):  
Experimental Design ◽  
Screen Printing ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Deposition Process ◽  
Technological Parameters ◽  
Significant Information ◽  
Screen Printing Technique ◽  
Final Porosity

AbstractIn the present work, the screen printing technique has been used to deposit thick films of Zr0.84Y016O1.92 (8YSZ). In order to control the final porosity in view of a specific application (SOFCs or gas sensor), an experimental design based on analysis of variances (ANOVA) has been carried out. From this, we were able to determine the influence of several technological parameters on films porosity and grain size. The films obtained have been analysed with both Scanning Electron Microscopy (SEM) and Focused Ion Beam (FIB) combined with SEM. We show that only the combination of experimental design and advanced observation technique such as Focused Ion Beam allowed us to extract significant information for the improvement of the deposition process.

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