Vapor Deposited Thin Films and Their Densification During Ion Beam Assisted Deposition

1990 ◽  
Vol 202 ◽  
Author(s):  
T.D. Andreadis ◽  
Mervine Rosen ◽  
M.I. Haftel ◽  
J.A. Sprague
Keyword(s):  
Ion Beam ◽  
Three Dimensional ◽  
Deposition Process ◽  
Void Volume ◽  
Energetic Ions ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Recoil Atoms ◽  
Dynamics Simulations ◽  
Deposited Film

ABSTRACTA computer simulation is presented of the reduction of void volume by incident energetic ions during Ion Beam Assisted Deposition (IBAD) of thin Ge films. The objective of the work is to understand the important mechanisms of thin film densification during IBAD. The density is affected by a number of mechanisms including: absorption of recoil atoms by voids and by diffusion of residual interstitials and vacancies. Simulations of Ge deposition under Ar ion bombardment were made using the collision cascade code MARLOWE with realistic void-sizes and for beam energies up to 500 eV. MARLOWE was used to obtain void volume loss as a function of void depth, void volume, and ion energy. The fate of residual interstitials and vacancies is taken into account.In order to model IBAD it is important to be able to model the deposition process. We describe our three-dimensional Molecular Dynamics simulations of the vapor deposition of Ni on a Ni (100) surface under low atom mobility conditions. We found the deposited film to have a packing density of about 80% of the nominal value and to contain ribbon-like voids.

Characterization of TiN Films Prepared by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Albert L. Chang ◽  
R. A. Kant
Keyword(s):  
Ion Beam ◽  
Analytical Techniques ◽  
Deposition Process ◽  
Processing Parameters ◽  
Ion Energy ◽  
Tin Films ◽  
Tin Film ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

ABSTRACTOne of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Characterization of TiN Films Prepared by ion Beam Assisted Deposition

1988 ◽  
Vol 140 ◽  
Author(s):  
Albert L. Chang ◽  
R. A. Kant
Keyword(s):  
Ion Beam ◽  
Analytical Techniques ◽  
Deposition Process ◽  
Processing Parameters ◽  
Ion Energy ◽  
Tin Films ◽  
Tin Film ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

AbstractOne of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Molecular Dynamics Study of Ion Impact Phenomena and Compressive Stress in Thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
N.A. Marks ◽  
P. Guan ◽  
D.R. Mckenzie ◽  
B.A. PailThorpe
Keyword(s):  
Molecular Dynamics ◽  
Three Dimensional ◽  
Carbon Films ◽  
Loss Mechanism ◽  
Ion Energy ◽  
Lennard Jones ◽  
Impact Phenomena ◽  
Ion Impact ◽  
Dynamics Simulations ◽  
The Impact

ABSTRACTMolecular dynamics simulations of nickel and carbon have been used to study the phenomena due to ion impact. The nickel and carbon interactions were described using the Lennard-Jones and Stillinger-Weber potentials respectively. The phenomena occurring after the impact of 100 e V to 1 keV ions were studied in the nickel simulations, which were both two and three-dimensional. Supersonic focussed collision sequences (or focusons) were observed, and associated with these focusons were unexpected sonic bow waves, which were a major energy loss mechanism for the focuson. A number of 2D carbon films were grown and the stress in the films as a function of incident ion energy was Measured. With increasing energy the stress changed from tensile to compressive and reached a maximum around 50 eV, in agreement with experiment.

Microstructural observation of a composite film of c-BN and h-BN phases

2000 ◽  
Vol 15 (11) ◽  
pp. 2292-2295 ◽  
Author(s):  
Young-Joon Park ◽  
Young-Joon Baik ◽  
Jae Hyoung Choi ◽  
Jeong Yong Lee ◽  
Jun-Hee Hahn
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Composite Film ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Deposition Process ◽  
Microstructural Observation ◽  
Ion Beam Assisted Deposition

BN films consisting of c-BN and h-BN phases were synthesized using an ion-beam-assisted deposition process. In contrast to conventional observations, the c-BN and h-BN phases did not form separate layers, but were distributed in the form of nano-sized grains throughout the film thickness. No distinctly aligned h-BN layer was observed before the c-BN phase. Such a mixed character of the film was attributed to a localized ion bombardment effect instead of the macro-stress. Possibly because of the presence of scattered h-BN phases, the thin film described here possessed a low hardness of about 20 GPa and a low stress of about 5 GPa, compared with other reported c-BN-containing films.

Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Secondary Phase ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Argon Ions

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

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