Preparation and Characterization of Ion Beam Assisted Aluminum Oxide Films

1989 ◽  
Vol 157 ◽  
Author(s):  
James K. Hirvonen ◽  
T.G. Tetreault ◽  
G. Parker ◽  
P. Revesz ◽  
D. Land ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Ion Beam ◽  
Optical Coatings ◽  
Refractive Indices ◽  
Ion Energy ◽  
Oxygen Ion ◽  
Ion Beam Assisted Deposition ◽  
Beam Analysis ◽  
Optical Ellipsometry

ABSTRACTThe ion beam assisted deposition (IBAD) technique has been employed to make aluminum oxide optical coatings. Deposition variables include aluminum oxide evaporant to oxygen ion beam flux ratios, substrate temperature, and ion energy. Characterization included optical ellipsometry, ion beam analysis, and adhesion tests. Films deposited with the aid of ions exhibited the highest refractive indices and best adhesion to their substrates.

Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition

2003 ◽  
Vol 126 (9) ◽  
pp. 509-513 ◽  
Author(s):  
C. Liu ◽  
T. Mihara ◽  
T. Matsutani ◽  
T. Asanuma ◽  
M. Kiuchi
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ion Beam ◽  
Oxide Films ◽  
Oxygen Ion ◽  
Ion Beam Assisted Deposition ◽  
Tin Oxide Films

Ion beam assisted deposition of Cu(In,Ga)Se2 films for thin film solar cells

2001 ◽  
Vol 668 ◽  
Author(s):  
Gerd Lippold ◽  
Horst Neumann ◽  
Axel Schindler
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Scale Up ◽  
Ion Source ◽  
The Novel ◽  
Ion Energy ◽  
Broad Beam ◽  
Ion Beam Assisted Deposition ◽  
Beam Analysis ◽  
Selenization Process

ABSTRACTWe report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°CBesides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.

Characterization of TiN Films Prepared by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
Albert L. Chang ◽  
R. A. Kant
Keyword(s):  
Ion Beam ◽  
Analytical Techniques ◽  
Deposition Process ◽  
Processing Parameters ◽  
Ion Energy ◽  
Tin Films ◽  
Tin Film ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

ABSTRACTOne of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Characterization of TiN Films Prepared by ion Beam Assisted Deposition

1988 ◽  
Vol 140 ◽  
Author(s):  
Albert L. Chang ◽  
R. A. Kant
Keyword(s):  
Ion Beam ◽  
Analytical Techniques ◽  
Deposition Process ◽  
Processing Parameters ◽  
Ion Energy ◽  
Tin Films ◽  
Tin Film ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

AbstractOne of the advantages of the ion beam assisted deposition process is its controllability of the processing parameters such as: ion-to-atom arrival ratio and the ion energy. In this study, the effects of the nitrogen ion energy (from 1 KV to 30KV) on the TiN film morphology and microstructures were systematically investigated as a function of ion-to-atom arrival ratios, using TEM, XTEM, SEM, ESCA and other analytical techniques.

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

In situ characterization of rare earth-CdTe heterostructures by ion beam analysis

1994 ◽  
Vol 249 (2) ◽  
pp. 266-270 ◽  
Author(s):  
P Gros ◽  
G Fiat ◽  
D Brun ◽  
B Daudin ◽  
J Eymery ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Beam ◽  
In Situ Characterization ◽  
Ion Beam Analysis ◽  
Beam Analysis
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