Electron Beam Source Molecular Beam Epitaxy of AlxGa1−Xas Graded Band Gap Device Structures

1987 ◽  
Vol 102 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Hot Electron ◽  
Group Iii ◽  
Composition Profiles ◽  
Variable Band Gap ◽  
Graded Band Gap

ABSTRACTA new method has been developed for the growth of graded band-gap AlxGal-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGal-.xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and Mshaped barrier superlattices.

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Electron Beam Source Molecular Beam Epitaxy Of Al x Ga 1-x As Graded Band Gap Device Structures

1988 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

1981 ◽  
Vol 19 (3) ◽  
pp. 626-627 ◽  
Author(s):  
J. M. Woodall ◽  
J. L. Freeouf ◽  
G. D. Pettit ◽  
T. Jackson ◽  
P. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Graded Band Gap

Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals

1990 ◽  
Author(s):  
Roger J. Malik ◽  
Leda M. Lunardi ◽  
Barry F. Levine ◽  
Clyde G. Bethea ◽  
Fabio Beltram ◽  
...  
Keyword(s):  
Electron Beam ◽  
Band Gap ◽  
Electron Beam Evaporation ◽  
Band Gap Engineering ◽  
Group Iii

The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

2003 ◽  
Vol 796 ◽  
Author(s):  
Prabhakar Bandaru ◽  
Subal Sahni ◽  
Eli Yablonovitch ◽  
Hyung-Jun Kim ◽  
Ya-Hong Xie
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Si Substrates ◽  
Surface Hydrogen ◽  
Growth Modes ◽  
Device Properties ◽  
Cmos Processing

ABSTRACTWe report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

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