Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

1981 ◽  
Vol 19 (3) ◽  
pp. 626-627 ◽  
Author(s):  
J. M. Woodall ◽  
J. L. Freeouf ◽  
G. D. Pettit ◽  
T. Jackson ◽  
P. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Graded Band Gap

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Electron Beam Source Molecular Beam Epitaxy Of Al x Ga 1-x As Graded Band Gap Device Structures

1988 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Electron Beam Source Molecular Beam Epitaxy of AlxGa1−Xas Graded Band Gap Device Structures

1987 ◽  
Vol 102 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Hot Electron ◽  
Group Iii ◽  
Composition Profiles ◽  
Variable Band Gap ◽  
Graded Band Gap

ABSTRACTA new method has been developed for the growth of graded band-gap AlxGal-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGal-.xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and Mshaped barrier superlattices.

Determination and modeling of the optical constants of direct band gap Be x Zn1−x Te grown by molecular beam epitaxy

2004 ◽  
Vol 1 (4) ◽  
pp. 706-709
Author(s):  
M. Muñoz ◽  
O. Maksimov ◽  
M. C. Tamargo ◽  
M. R. Buckley ◽  
F. C. Peiris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Optical Constants ◽  
Molecular Beam ◽  
Direct Band Gap ◽  
Direct Band

Strong band gap reduction in highly mismatched alloy InAlBiAs grown by molecular beam epitaxy

2019 ◽  
Vol 126 (9) ◽  
pp. 095704 ◽  
Author(s):  
Jing Zhang ◽  
Yuejing Wang ◽  
Shoaib Khalid ◽  
Anderson Janotti ◽  
Greg Haugstad ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Strong Band

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

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