Electron Beam Source Molecular Beam Epitaxy Of Al x Ga 1-x As Graded Band Gap Device Structures

1988 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap

Electron Beam Source Molecular Beam Epitaxy of AlxGa1−Xas Graded Band Gap Device Structures

1987 ◽  
Vol 102 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Hot Electron ◽  
Group Iii ◽  
Composition Profiles ◽  
Variable Band Gap ◽  
Graded Band Gap

ABSTRACTA new method has been developed for the growth of graded band-gap AlxGal-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGal-.xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and Mshaped barrier superlattices.

Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

1981 ◽  
Vol 19 (3) ◽  
pp. 626-627 ◽  
Author(s):  
J. M. Woodall ◽  
J. L. Freeouf ◽  
G. D. Pettit ◽  
T. Jackson ◽  
P. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Graded Band Gap
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