The fabrication of p-Ge/n-Si photodetectors, compatible with back-end Si CMOS processing, by low temperature (< 400 °C) molecular beam epitaxy and electron-beam evaporation

2003 ◽  
Vol 796 ◽  
Author(s):  
Prabhakar Bandaru ◽  
Subal Sahni ◽  
Eli Yablonovitch ◽  
Hyung-Jun Kim ◽  
Ya-Hong Xie
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Si Substrates ◽  
Surface Hydrogen ◽  
Growth Modes ◽  
Device Properties ◽  
Cmos Processing

ABSTRACTWe report on the low temperature growth, by molecular beam epitaxy (375 °C) and electron-beam evaporation (300 °C), of p-Ge films on n-Si substrates for fabricating p-n junction photodetectors, aimed at the integration of opto-electronic components with back-end Si CMOS processing. Various surface hydrogen and hydrocarbon removal treatments were attempted to improve device properties. We invoke Ge diffusion and growth modes as a function of deposition temperature and rate to correlate structural analysis with the device performance.

Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates

1990 ◽  
Vol 202 ◽  
Author(s):  
T. P. Humphreys ◽  
Hyeongtag Jeon ◽  
R. J. Nemanich ◽  
J. B. Posthill ◽  
R. A. Rudder ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam ◽  
Thermal Evaporation ◽  
Three Dimensional ◽  
Electron Beam Evaporation ◽  
Tungsten Filament ◽  
Growth Modes ◽  
Deposited Films ◽  
Deposition Techniques

ABSTRACTIn the present study epitaxial Ni(001) films have been grown on natural C(001) substrates (type la and Ha) and homoepitaxial C(001) films. Two deposition techniques including electron-beam evaporation of Ni in a molecular beam epitaxy (MBE) system and evaporation of Ni from a resistively heated tungsten filament have been employed. As evidenced by scanning electron microscopy (SEM), the Ni films deposited by electron-beam evaporation were found to replicate the very fine, unidirectional scratches present on the as polished C(001) substrates. Indeed, the coverage and uniformity of the deposited films would imply a two-dimensional (2-D) growth mode. In comparison, the thermal evaporation of Ni on C(001) substrates results in a highly textured and faceted surface morphology indicative of three-dimensional (3–D) nucleation and growth. Moreover, Rutherford backscattering/channeling measurements have demonstrated that the Ni(001) films deposited by electron-beam evaporation are of superior crystalline quality. Differences in the observed microstructure and apparent growth modes of the epitaxial Ni(001) films have been attributed to the presence of oxygen incorporation in those layers deposited by thermal evaporation.

Electron Beam Source Molecular Beam Epitaxy of AlxGa1−Xas Graded Band Gap Device Structures

1987 ◽  
Vol 102 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Beam Evaporation ◽  
Hot Electron ◽  
Group Iii ◽  
Composition Profiles ◽  
Variable Band Gap ◽  
Graded Band Gap

ABSTRACTA new method has been developed for the growth of graded band-gap AlxGal-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGal-.xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and Mshaped barrier superlattices.

Compound-source Molecular Beam Epitaxy of GaN on Si at Low Temperature Using GaN Powder and Ammonia as Sources

2006 ◽  
Vol 955 ◽  
Author(s):  
Tohru Honda ◽  
Masaru Sawada ◽  
Hiromi Yamamoto ◽  
Masashi Sawadaishi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
High Energy ◽  
Back Reaction ◽  
Xps Spectra ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Si Substrates

ABSTRACTLow-temperature growth of GaN is very attracting for the application to light emitting devices grown on Si substrates because it prevents the melt-back reaction between Ga and Si substrates. The low-temperature growth of GaN by compound-source molecular beam epitaxy (CS-MBE) has been reported. In the previous report, GaN powders were used as a source and no additional nitrogen source was introduced during the growth. At present, its growth mechanism is unclear. In this paper, CS-MBE of GaN layers using GaN and ammonia as sources is discussed. Especially, the reduction of excess Ga in GaN layers by introducing ammonia supply is discussed based on their refraction high-energy electron diffraction (RHEED) patterns and x-ray photoelectron spectroscopy (XPS) spectra.

A low-temperature route for producing epitaxial perovskite superlattice structures on (001)-oriented SrTiO3/Si substrates

2021 ◽  
Author(s):  
Aleksandr V. Plokhikh ◽  
Iryna S. Golovina ◽  
Matthias Falmbigl ◽  
Igor A. Karateev ◽  
Alexander L. Vasiliev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Perovskite Oxide ◽  
Si Substrates ◽  
Layer Deposition ◽  
Superlattice Structures

We report on the formation of epitaxial perovskite oxide superlattice structures by atomic layer deposition (ALD), which are integrated monolithically on Si wafers using a template layer of SrTiO3 deposited by hybrid molecular beam epitaxy.

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap
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