Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals

1990 ◽  
Author(s):  
Roger J. Malik ◽  
Leda M. Lunardi ◽  
Barry F. Levine ◽  
Clyde G. Bethea ◽  
Fabio Beltram ◽  
...  
1987 ◽  
Vol 102 ◽  
Author(s):  
R. J. Malik ◽  
A. F. J. Levi ◽  
B. F. Levine ◽  
R. C. Miller ◽  
D. V. Lang ◽  
...  

ABSTRACTA new method has been developed for the growth of graded band-gap AlxGal-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGal-.xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and Mshaped barrier superlattices.


2018 ◽  
Vol 42 (4) ◽  
pp. 2726-2732 ◽  
Author(s):  
Archana K. Munirathnappa ◽  
Vikash C. Petwal ◽  
Jishnu Dwivedi ◽  
Nalini G. Sundaram

Band gap engineering in NaEu(WO4)2 red phospors via dose-dependent EB irradiation: a new strategy for improving fluorescence intensity.


2011 ◽  
Vol 18 (01n02) ◽  
pp. 71-75 ◽  
Author(s):  
M. M. ABD EL-RAHEEM

Five compositions of the system As 25 Se 75-x Tl x (x = 12, 16, 20, 24 and 28%) have been prepared using melt quench technique. Thin films of the same thickness (200 nm) were deposited by electron beam evaporation technique. Optical and other parameters of the films have been studied. The optical band gap E op found to decrease by increasing the coordination number r and average number of bonds per atom N av and by decreasing the heat of atomization H s . Other parameters as an oscillator energy E o , dispersion energy E d and plasma frequency ω p found to be affected by changing thallium content.


1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  

2020 ◽  
Vol 13 (9) ◽  
pp. 091005
Author(s):  
Wiktor Żuraw ◽  
Wojciech M. Linhart ◽  
Jordan Occena ◽  
Tim Jen ◽  
Jared. W. Mitchell ◽  
...  

2019 ◽  
Vol 11 (4) ◽  
pp. 04015-1-04015-6
Author(s):  
H. S. Gavale ◽  
◽  
M. S. Wagh ◽  
S. R. Gosavi ◽  
◽  
...  

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