Study of Boron Implantation in CdTe

1988 ◽  
Vol 100 ◽  
Author(s):  
D. N. Jamieson ◽  
R. C. Bowman ◽  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. G. Downing
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Liquid Nitrogen Temperature ◽  
Neutron Depth Profiling ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Boron Implantation ◽  
Induced Structure

ABSTRACTThe effect of large dose boron implantation in single crystal CdTe has been investigated by Rutherford Backscattering Spectrometry with channeling (RBS), double crystal x-ray diffraction (DCD) and photoreflectance spectroscopy (PR). Comparisons are made with the results of identical B implantations of Si and GaAs crystals. Multiple energy implantations were performed at room temperature and liquid nitrogen temperature with total doses up to 1.5×1016 B+ ions/cm2. The implanted B distribution was measured with neutron depth profiling (NDP) and found to agree well with Monte-Carlo ion range calculations. The RBS results showed that the CdTe crystals had not been rendered completely amorphous even for the highest dose implantation, unlike GaAs and Si. Furthermore, the DCD results showed little implantation induced structure in the rocking curves from the implanted CdTe crystals, in contrast to GaAs. The consequences of annealing at 500°C in an attempt to regrow the crystal structure are also discussed.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

1999 ◽  
Vol 595 ◽  
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

AbstractWe report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Magnetic and electronic properties of M-Ba–Cu–O (M = Y, Er, Eu)

1987 ◽  
Vol 2 (6) ◽  
pp. 775-778 ◽  
Author(s):  
H. Jenny ◽  
B. Walz ◽  
G. Leeman ◽  
V. Geiser ◽  
S. Jost ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Single Phase ◽  
Liquid Nitrogen Temperature ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
Diffraction Peaks

Various high-Tc superconductors of the La–(Ba,Sr)–Cu–O and the M–Ba–Cu–O systems with M = Y, Er, and Eu have been prepared by the solid-state reaction method. Single-phase samples with no additional diffraction peaks as verified by x-ray diffraction (XRD) measurements have been obtained. Measurements of the electrical resistivity and of the magnetization showed sharp superconducting transitions with a width of 1 K. The measurements of the magnetic susceptibility have been extended above room temperature up to 770 K. There is clear evidence for the formation of a magnetic moment in all M–Ba–Cu–O samples. Monochromated x-ray photoelectron spectroscopy (MXPS) valence band and x-ray photoelectron spectroscopy (XPS) core level spectra have been measured on various samples at room temperature and at liquid nitrogen temperature.

Buried Silicide Synthesis and Strain in Cobalt-Implanted Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
J.C. Barbour ◽  
S.T. Picraux ◽  
B.L. Doyle
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Silicide Formation ◽  
Critical Layer Thickness ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Single Crystal Layer

ABSTRACTSilicon (001) substrates were implaynted with 350 keV Co at room temperature and 450°C with fluence of from l×l017 Co/cm2 to 6×1017 Co/cm . All samples were annealed at 1000°C in order to form the CoSi2 phase Concentration profiles were determined with Rutherford backscattering spectrometry (RBS), and the associated strain profiles were analyzed with double-crystal X-ray rocking curve measurements. Ion channeling was also used to characterize the silicide formation and crystal quality. An implantation of 6×1017 Co/cm2 at 450°C forms a single-crystal CoSi2 layer while lower fluences do not. A continuous, buried CoSi2 single-crystal layer is formed for the 3×1017 Co/cm2 sample implanted at 450°C and annealed at 1000°C. The continous CoSi2 layer is thicker than the critical layer thickness for a fully coherent film, and therefore the layer partially relaxes. A relaxation of 50% of the fully coherent value is observed for this buried silicide system.

scholarly journals The influence of plastic deformation and chemical environment on the resistively of al-alloy overhead lines

2005 ◽  
Vol 2 (1) ◽  
pp. 63-76
Author(s):  
D. Nowak-Woźny ◽  
W. Mielcarek ◽  
K. Prociów ◽  
L. Woźny ◽  
J.B. Gajewski
Keyword(s):  
Plastic Deformation ◽  
Room Temperature ◽  
Measurement Data ◽  
Liquid Nitrogen Temperature ◽  
Mechanical Relaxation ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Overhead Lines ◽  
Chemical Ageing

The electrical resistively and intensity of X-ray diffraction reflexes were determined for overhead line wires deformed plastically and immersed at different solutions. Immersing (chemical ageing) was performed by plastic deformation along the wire axis. During chemical ageing the samples were exposed to the action of the Cl-, SO4 2-, and SO3 2- ions. Resistively was measured at room temperature and at liquid nitrogen temperature. After the X-ray and resistively measurement data were compared, it was found that three processes could take place: the flow of ions through the boundary between a sample and environment; the mechanical relaxation of vacancies near a line of dislocations, and the ordering of microstructure. These effects can lead to the anisotropy of resistively.

Growth And Characterization Of Amorphous Ain Thin Films By Reactive Magnetron Sputtering At Low Temperature

1998 ◽  
Vol 535 ◽  
Author(s):  
K. Gurumurugan ◽  
Hong Chen ◽  
G. R. Harp
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Reactive Magnetron Sputtering ◽  
Composition Analysis ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Diffraction Peaks

AbstractWe present the first report of the preparation and characterization of α-AIN films using reactive magnetron sputtering at cryogenic temperature. By comparison, analogous films grown at room temperature were polycrystalline. The films were characterized using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Rutherford Backscattering Spectrometry (RBS), Infrared (IR) Spectroscopy and optical transmission. XRD studies on films grown at room temperature showed diffraction peaks corresponding to (100), (101), (102) and (210) planes. In contrast, no peaks were observed for AIN films formed at liquid nitrogen temperature confirming the amorphous nature of the films. Composition analysis using RBS showed the presence of Al and N in ˜1:1 stoichiometry. The films were highly transparent and the computed bandgaps of αand c-AIN films were 5.90 and 5.89 eV respectively. We also consider the possibilities of wet etching the AIN films in diluted KOH solution and the results are discussed.

Buried Silicide Synthesis and Strain in Cobalt-Implanted Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
J.C. Barbour ◽  
S.T. Picraux ◽  
B.L. Doyle
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Concentration Profiles ◽  
Critical Layer Thickness ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Single Crystal Layer

AbstractSilicon (001) substrates were implanted with 350 keV co at room temperature and 450°C with fluence of from 1x1017 Co/cm2 to 6x10 Co/cm2. All samples were annealed at 1000°C in order to form the CoSi2 phase. Concentration profiles were determined with Rutherford backscattering spectrometry (RBS), and the associated strain profiles were analyzed with double-crystal X-ray rocking curve measurements. Ion channeling was also used to characterize.the suicide formation and crystal quality. An implantation of 6x1017 Co/cm2 at 450°C forms a single-crystal CoSi2 layer while lower fluences do not. A continuous, buried CoSi2 single-crystal layer is formed for the 3x1017 Co/cm2 sample implanted at 450°C and annealed at 1000°C. The continous CoSi2 layer is thicker than the critical layer thickness for a fully coherent film, and therefore the layer partially relaxes. A relaxation of 50% of the fully coherent value is observed for this buried suicide system.

Electron Microscopy of Human Gallstones

1971 ◽  
Vol 29 ◽  
pp. 296-297
Author(s):  
C. Wolpers ◽  
R. Blaschke
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Bile Pigment ◽  
X Ray Diffraction ◽  
Triclinic Crystal System ◽  
X Ray ◽  
Follow Up Study ◽  
Infra Red ◽  
Main Components

Scanning microscopy was used to study the surface of human gallstones and the surface of fractures. The specimens were obtained by operation, washed with water, dried at room temperature and shadowcasted with carbon and aluminum. Most of the specimens belong to patients from a series of X-ray follow-up study, examined during the last twenty years. So it was possible to evaluate approximately the age of these gallstones and to get information on the intensity of growing and solving.Cholesterol, a group of bile pigment substances and different salts of calcium, are the main components of human gallstones. By X-ray diffraction technique, infra-red spectroscopy and by chemical analysis it was demonstrated that all three components can be found in any gallstone. In the presence of water cholesterol crystallizes in pane-like plates of the triclinic crystal system.

Electron Microscope study of commensurate-incommensurate phase transition in BaZnGeO4

1990 ◽  
Vol 48 (4) ◽  
pp. 172-173
Author(s):  
Naoki Yamamoto ◽  
Makoto Kikuchi ◽  
Tooru Atake ◽  
Akihiro Hamano ◽  
Yasutoshi Saito
Keyword(s):  
Phase Transition ◽  
Electron Microscope Study ◽  
Room Temperature ◽  
Hexagonal Lattice ◽  
Ferroelectric Materials ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Periodic Arrays ◽  
Modulation Wave Vector

BaZnGeO4 undergoes many phase transitions from I to V phase. The highest temperature phase I has a BaAl2O4 type structure with a hexagonal lattice. Recent X-ray diffraction study showed that the incommensurate (IC) lattice modulation appears along the c axis in the III and IV phases with a period of about 4c, and a commensurate (C) phase with a modulated period of 4c exists between the III and IV phases in the narrow temperature region (—58°C to —47°C on cooling), called the III' phase. The modulations in the IC phases are considered displacive type, but the detailed structures have not been studied. It is also not clear whether the modulation changes into periodic arrays of discommensurations (DC’s) near the III-III' and IV-V phase transition temperature as found in the ferroelectric materials such as Rb2ZnCl4.At room temperature (III phase) satellite reflections were seen around the fundamental reflections in a diffraction pattern (Fig.1) and they aligned along a certain direction deviated from the c* direction, which indicates that the modulation wave vector q tilts from the c* axis. The tilt angle is about 2 degree at room temperature and depends on temperature.

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