Experimental demonstration of broadband negative refraction at visible frequencies by critical layer thickness analysis in a vertical hyperbolic metamaterial

This work presents a vertical hyperbolic metamaterial (vHMM) consisting of a vertically stacked metal-dielectric multilayer that operates in the visible spectrum. The vHMM is designed by exploiting the relation between negative refraction and effective permittivity along the perpendicular direction of the layers (ε ⊥). When a vHMM has a high loss tangent defined by tan δ ⊥ ≡ Im(ε ⊥)/Re(ε ⊥), even a vHMM composed of relatively thick layers can generate negative refraction. A fabricable vHMM composed of gold and copolymer resist (EL8) which exhibits negative refraction at the wavelengths between 450 and 550 nm is designed using critical layer thickness analysis. The largest negative refraction is observed at the wavelength of 500 nm, where the angle of refraction reaches −1.03°. The corresponding loss tangent and equivalent refractive index are 1.08 and −0.47, respectively. However, negative refraction is not observed at the wavelengths longer than 550 nm due to low tan δ ⊥. We uncover that the tan δ ⊥ of a vHMM is the dominant condition for generating negative refraction rather than the ratio of layer thickness to wavelength.

Critical Layer Thickness: Theory and Experiment in the ZnSe/GaAs (001) Material System

The critical layer thickness (CLT) determines the criteria for dislocation formation and the onset of lattice relaxation. Although several theoretical models have been developed for the critical layer thickness, experimentally-measured CLTs in ZnSe/GaAs (001) heterostructures are often at variance with one another as well as with established theories. In a previous work [T. Kujofsa et al., J. Vac. Sci. Technol. B, 34, 051201 (2016)], we showed that the experimentally measured CLT may be much larger than the equilibrium value when using finite experimental resolution. In this work, we apply a general dislocation flow model to determine the apparent critical layer thickness as a function of the experimental resolution for ZnSe/GaAs (001) heterostructures. More importantly, we compare the results utilizing different equilibrium theories and therefore varying driving forces for the lattice relaxation in order to determine which established models are consistent with several measured values of CLT for ZnSe/GaAs (001) once kinetically-limited relaxation and finite experimental strain resolution are taken into account.

Interface-Induced Plasmon Nonhomogeneity in Nanostructured Metal-Dielectric Planar Metamaterial

Transformations of the electronic structure in thin silver layers in metal-dielectric (TiAlN/Ag) multilayer nanocomposite were investigated by a set of electron spectroscopy techniques. Localization of the electronic states in the valence band and reduction of electron concentration in the conduction band was observed. This led to decreasing metallic properties of silver in the thin films. A critical layer thickness of 23.5 nm associated with the development of quantum effects was determined by X-ray photoelectron spectroscopy. Scanning Auger electron microscopy of characteristic energy losses provided images of plasmon localization in the Ag layers. The nonuniformity of plasmon intensities distribution near the metal-nitride interfaces was assessed experimentally.