Growth And Characterization Of Amorphous Ain Thin Films By Reactive Magnetron Sputtering At Low Temperature

1998 ◽  
Vol 535 ◽  
Author(s):  
K. Gurumurugan ◽  
Hong Chen ◽  
G. R. Harp
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Reactive Magnetron Sputtering ◽  
Composition Analysis ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Diffraction Peaks

AbstractWe present the first report of the preparation and characterization of α-AIN films using reactive magnetron sputtering at cryogenic temperature. By comparison, analogous films grown at room temperature were polycrystalline. The films were characterized using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Rutherford Backscattering Spectrometry (RBS), Infrared (IR) Spectroscopy and optical transmission. XRD studies on films grown at room temperature showed diffraction peaks corresponding to (100), (101), (102) and (210) planes. In contrast, no peaks were observed for AIN films formed at liquid nitrogen temperature confirming the amorphous nature of the films. Composition analysis using RBS showed the presence of Al and N in ˜1:1 stoichiometry. The films were highly transparent and the computed bandgaps of αand c-AIN films were 5.90 and 5.89 eV respectively. We also consider the possibilities of wet etching the AIN films in diluted KOH solution and the results are discussed.

Growth and Characterization of Well-Aligned RuO2/R-TiO2 Heteronanostructures on Sapphire (100) Substrates by Reactive Magnetron Sputtering

2011 ◽  
Vol 170 ◽  
pp. 78-82
Author(s):  
Hung Pin Hsu ◽  
Ying Sheng Huang ◽  
Chien Nan Yeh ◽  
Yi Min Chen ◽  
Dah Shyang Tsai ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Vertically Aligned ◽  
Xrd Patterns ◽  
Electron Diffractometry

We report the growth of well-aligned RuO2/R-TiO2 heteronanostructures on sapphire (100) substrates by reactive magnetron sputtering using Ti and Ru metal targets under different conditions. The surface morphology and structural properties of the as-deposited heteronanostructures were characterized using field-emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected-area electron diffractometry (SAED). The FESEM micrographs and XRD patterns indicated the growth of vertically aligned RuO2(001) nanotubes and twinned V-shaped RuO2(101) nanowedges (NWs) on top of R-TiO2 nanorods under different sputtering pressures. TEM and SAED characterizations of the V-shaped RuO2 NWs showed that the NWs are crystalline RuO2 with twin planes of (101) and twin direction of [ 01] at the V-junction.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Room temperature deposition of crystalline HfN thin films by DC reactive magnetron sputtering

2021 ◽  
Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Temperature Deposition

MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

1999 ◽  
Vol 595 ◽  
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

AbstractWe report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Growth and characterization of NiO thin films prepared by dc reactive magnetron sputtering

2011 ◽  
Vol 13 (2) ◽  
pp. 314-320 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
A. Sivasankar Reddy ◽  
Kee-Sun Lee ◽  
P. Sreedhara Reddy
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering
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