Buried Silicide Synthesis and Strain in Cobalt-Implanted Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
J.C. Barbour ◽  
S.T. Picraux ◽  
B.L. Doyle
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Concentration Profiles ◽  
Critical Layer Thickness ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Single Crystal Layer

AbstractSilicon (001) substrates were implanted with 350 keV co at room temperature and 450°C with fluence of from 1x1017 Co/cm2 to 6x10 Co/cm2. All samples were annealed at 1000°C in order to form the CoSi2 phase. Concentration profiles were determined with Rutherford backscattering spectrometry (RBS), and the associated strain profiles were analyzed with double-crystal X-ray rocking curve measurements. Ion channeling was also used to characterize.the suicide formation and crystal quality. An implantation of 6x1017 Co/cm2 at 450°C forms a single-crystal CoSi2 layer while lower fluences do not. A continuous, buried CoSi2 single-crystal layer is formed for the 3x1017 Co/cm2 sample implanted at 450°C and annealed at 1000°C. The continous CoSi2 layer is thicker than the critical layer thickness for a fully coherent film, and therefore the layer partially relaxes. A relaxation of 50% of the fully coherent value is observed for this buried suicide system.

Buried Silicide Synthesis and Strain in Cobalt-Implanted Silicon

1987 ◽  
Vol 102 ◽  
Author(s):  
J.C. Barbour ◽  
S.T. Picraux ◽  
B.L. Doyle
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Silicide Formation ◽  
Critical Layer Thickness ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Single Crystal Layer

ABSTRACTSilicon (001) substrates were implaynted with 350 keV Co at room temperature and 450°C with fluence of from l×l017 Co/cm2 to 6×1017 Co/cm . All samples were annealed at 1000°C in order to form the CoSi2 phase Concentration profiles were determined with Rutherford backscattering spectrometry (RBS), and the associated strain profiles were analyzed with double-crystal X-ray rocking curve measurements. Ion channeling was also used to characterize the silicide formation and crystal quality. An implantation of 6×1017 Co/cm2 at 450°C forms a single-crystal CoSi2 layer while lower fluences do not. A continuous, buried CoSi2 single-crystal layer is formed for the 3×1017 Co/cm2 sample implanted at 450°C and annealed at 1000°C. The continous CoSi2 layer is thicker than the critical layer thickness for a fully coherent film, and therefore the layer partially relaxes. A relaxation of 50% of the fully coherent value is observed for this buried silicide system.

Study of Boron Implantation in CdTe

1988 ◽  
Vol 100 ◽  
Author(s):  
D. N. Jamieson ◽  
R. C. Bowman ◽  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. G. Downing
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Depth Profiling ◽  
Liquid Nitrogen Temperature ◽  
Neutron Depth Profiling ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Boron Implantation ◽  
Induced Structure

ABSTRACTThe effect of large dose boron implantation in single crystal CdTe has been investigated by Rutherford Backscattering Spectrometry with channeling (RBS), double crystal x-ray diffraction (DCD) and photoreflectance spectroscopy (PR). Comparisons are made with the results of identical B implantations of Si and GaAs crystals. Multiple energy implantations were performed at room temperature and liquid nitrogen temperature with total doses up to 1.5×1016 B+ ions/cm2. The implanted B distribution was measured with neutron depth profiling (NDP) and found to agree well with Monte-Carlo ion range calculations. The RBS results showed that the CdTe crystals had not been rendered completely amorphous even for the highest dose implantation, unlike GaAs and Si. Furthermore, the DCD results showed little implantation induced structure in the rocking curves from the implanted CdTe crystals, in contrast to GaAs. The consequences of annealing at 500°C in an attempt to regrow the crystal structure are also discussed.

Structural and Optical Property Investigations on Mg-Alloying in Epitaxial Zinc Oxide Films on Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
A.K. Sharma ◽  
C. Jin ◽  
A. Kvit ◽  
J. Narayan ◽  
J.F. Muth ◽  
...  
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Zinc Oxide Films ◽  
Transmission Electron ◽  
Potential Applications ◽  
Post Deposition

AbstractWe have synthesized single-crystal epitaxial MgZnO films by pulsed-laser deposition. High-resolution transmission electron microscopy, X-ray diffraction and Rutherford backscattering spectroscopy/ion channeling were used to characterize the microstructure, defect content, composition and epitaxial single-crystal quality of the films. In these films with up to ∼ 34 atomic percent Mg incorporation, an intense ultraviolet band edge photoluminescence at room temperature and 77 K was observed. The highly efficient photoluminescence is indicative of the excitonic nature of the material. Transmission spectroscopy revealed that the excitonic structure of the alloys was clearly visible at room temperature. Post-deposition annealing in oxygen reduced the number of defects and improved the optical properties of the films. The potential applications of MgZnO alloys in a variety of optoelectronic devices are discussed.

Ion-Beam Synthesis of Buried Yttrium Silicide

1989 ◽  
Vol 157 ◽  
Author(s):  
T.L. Alford ◽  
J.C. Barbour
Keyword(s):  
Single Crystal ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
High Fluence ◽  
Uniform Thickness ◽  
Double Crystal ◽  
X Ray ◽  
Continuous Layer ◽  
Double Crystal Diffractometer

ABSTRACTBuried single-crystal YSi1.7 layers have been synthesized using high fluence implants of 330 keV yttrium ions into (111) Si held at 450°C followed by post-implant anneals of 1000°C . Rutherford backscattering spectrometry showed that an implant fluence of 3.6 X 1017 Y/cm2 forms a continuous layer of uniform thickness. Whereas, implant fluences of 1 — 2 x 1017 Y/cm2 form a thin continuous YSi1.7 layer with what are believed to be Y-silicide precipitates above and below the YSi1.7 layer. Strains resulting from the YSi1-7 layers were evaluated from x-ray rocking curves using a double crystal diffractometer.

Effect of the Extinction Distance in X-Ray Rocking Curve Analyses of II-VI Compounds

1990 ◽  
Vol 209 ◽  
Author(s):  
P.D. Moran ◽  
R.J. Matyi
Keyword(s):  
Single Crystal ◽  
Crystalline Perfection ◽  
Double Crystal ◽  
Rocking Curve ◽  
Dynamical Diffraction ◽  
X Ray ◽  
Extinction Length

ABSTRACTDouble crystal x-ray rocking curves from single crystal CdTe and CdZnTe of various degrees of crystalline perfection were recorded under diffraction conditions in which the extinction distance varied from under 10 microns to more than 100 microns. In crystals of intermediate quality the rocking curves recorded under conditions of long extinction length showed structure not evident in those recorded under conditions of short extinction length. Integrated reflectivity measurements were performed at both long and short extinction lengths. The results have been interpreted within the framework of a transition from kinematic to dynamical diffraction.

Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions

2010 ◽  
Vol 25 (12) ◽  
pp. 2341-2348 ◽  
Author(s):  
W. Jiang ◽  
H. Wang ◽  
I. Kim ◽  
Y. Zhang ◽  
W.J. Weber
Keyword(s):  
Grain Size ◽  
Single Crystal ◽  
Room Temperature ◽  
Ex Situ ◽  
Bulk Single Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling

Irradiation-induced amorphization in nanocrystalline and single-crystal 3C-SiC has been studied using 1 MeV Si+ ions under identical irradiation conditions at room temperature and 400 K. The disordering behavior has been characterized using in situ ion channeling and ex situ x-ray diffraction methods. The results show that, compared with single-crystal 3C-SiC, full amorphization of small 3C-SiC grains (˜3.8 nm in size) at room temperature occurs at a slightly lower dose. Grain size decreases with increasing dose until a fully amorphized state is attained. The amorphization dose increases at 400 K relative to room temperature. However, at 400 K, the amorphization dose for 2.0 nm grains is about a factor of 4 and 8 smaller than for 3.0 nm grains and bulk single-crystal 3C-SiC, respectively. The behavior is attributed to the preferential amorphization at the interface.

Single Crystal Growth of High-Pressure Phases of Ice and Salt Hydrate Far Below the Original Melting Point by Mixing Alcohol: Crystal Structure Determination of Magnesium Chloride Heptahydrate

2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Growth Technique ◽  
Salt Hydrate ◽  
X Ray

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

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