Improvement of Wrinkles in Roll-to-Roll Microwave Plasma CVD Graphene

2015 ◽  
Vol 1761 ◽  
Author(s):  
Takatoshi Yamada ◽  
Nayuta Shimada ◽  
Kazuki Uekusa ◽  
Masataka Hasegawa
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Domain Size ◽  
Plasma Chemical Vapor Deposition ◽  
Roll To Roll ◽  
Graphene Films ◽  
Microwave Plasma Cvd ◽  
Average Domain Size ◽  
Conductive Properties ◽  
Average Domain

ABSTRACTWrinkle-less graphene films are obtained through roll-to-roll microwave plasma chemical vapor deposition by using flexible copper/polyimide (Cu/PI) webs. Raman spectra suggests that the average domain size of the obtained graphene on the flexible Cu/PI is almost the same compared to the graphene on a Cu web that includes wrinkles. Also, by utilizing the flexible Cu/PI webs, the compressive strains decreased. The sheet resistances of graphene deposited on the Cu/PI are (1∼5)×104Ω, which is two orders of magnitude lower than those of graphene deposited on the Cu webs. Our results suggest that the controlling the expansion of web material an important technology to improve graphene transparent conductive properties.

Residual Stress Analysis of Microwave Plasma CVD Diamond Films

2005 ◽  
Vol 495-497 ◽  
pp. 1359-1364 ◽  
Author(s):  
Leng Chen ◽  
Wei Min Mao ◽  
Fan Xiu Lu ◽  
Ping Yang
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Thermal Stresses ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Orientation Distribution ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Microwave Plasma Cvd

The residual stress and crystallographic texture of diamond films were investigated in the present work. The diamond films were synthesized on (100) silicon wafer by Microwave Plasma Chemical Vapor deposition (MPCVD). Then the residual stresses of the films were measured by X-ray diffractometer equipped with the two-dimensional detector. The residual stresses can be classified into two categories, i.e., the intrinsic stresses and the thermal stresses. It was shown that the thermal stresses were compressive in the temperature range studied and the intrinsic stresses were tensile. The crystallographic textures of the films were measured by X-ray diffractometer with the method of pole figure and orientation distribution function (ODF). The experimental results suggest that the crystallographic textures of the films depend upon the deposition temperature and methane flow rates, and the components and intensity of crystallographic textures have effect on the residual stresses in diamond films to a certain extent.

Homoepitaxial growth of high quality thick diamond film with microwave plasma CVD technique

2011 ◽  
Vol 1282 ◽  
Author(s):  
Hong-Xing Wang ◽  
Noritaka Ishigaki ◽  
Toshiki Ohkawa ◽  
Shinichi Kokami ◽  
Hideo Inoue ◽  
...  
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
High Quality ◽  
Plasma Chemical Vapor Deposition ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Microwave Plasma Cvd

AbstractA growth of high quality thick diamond film has been carried out on high pressure and high temperature diamond substrate by microwave plasma chemical vapor deposition system. First, the effect of growth parameters on the growth film morphologies was investigated, indicating that the diamond film is very sensitive to the growth temperature and input microwave power. Then, sample holders with different geometries were used in our experiment, illustrating that high quality diamond film can be grown by using the sample holder with flat surface. Finally, the characterization of the as grown samples has been carried out.

Patterning of Microwave Plasma Deposited Diamond Films

1990 ◽  
Vol 189 ◽  
Author(s):  
Moeljanto W. Leksono ◽  
Howard R. Shanks
Keyword(s):  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Substrate Quality ◽  
Plasma Chemical Vapor Deposition ◽  
Microwave Plasma Cvd ◽  
Lift Off ◽  
Diamond Paste

ABSTRACTPatterning has been successfully performed on diamond films deposited on polished silicon wafers from CH4 and H2 gases using microwave plasma chemical vapor deposition. The selectivity was achieved using a lift off process on silicon wafers which had been polished with diamond paste. The lift off process involves deposition and patterning of a thin ZnO film followed by deposition of amorphous silicon using a glow discharge technique. This is followed by microwave plasma CVD of the diamond film. The film is deposited selectively on the crystalline silicon areas of the substrate. Quality and patterning resolution of the resulting diamond films have been determined.

Preparation of Magnesia Stabilized Zirconia Thin Films for Solid Oxide Fuel Cell by Microwave Plasma Chemical Vapor Deposition.

Shinku ◽  
1997 ◽  
Vol 40 (8) ◽  
pp. 660-663
Author(s):  
Hideo OKAYAMA ◽  
Tsukasa KUBO ◽  
Noritaka MOCHIZUKI ◽  
Akiyoshi NAGATA ◽  
Hiromu ISA
Keyword(s):  
Thin Films ◽  
Fuel Cell ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Solid Oxide ◽  
Oxide Fuel ◽  
Stabilized Zirconia ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Nano-Crystalline Diamond Films Deposited on Copper Substrate by MPCVD Method

2011 ◽  
Vol 117-119 ◽  
pp. 1310-1314
Author(s):  
Xing Rui Li ◽  
Xin Wei Shi ◽  
Ning Yao ◽  
Xin Chang Wang
Keyword(s):  
Diamond Film ◽  
Deposition Time ◽  
Microwave Plasma ◽  
Copper Substrate ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Adhesive Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Nano Crystalline

Nano-crystalline diamond (NCD) films with good adhesion were deposited on flexible copper substrate with Ni interlayer by Microwave Plasma Chemical Vapor Deposition (MPCVD). In this paper, two-stage method was used to improve the adhesion between the copper substrates and the diamond films. The effect of deposition time of the first stage on the morphology, crystal structure, non-diamond phase and adhesive properties of diamond films was investigated. The performance and structure of the diamond films were studied by Scanning Electron Microscope (SEM), Raman Spectroscopy (Raman) and X-Ray Diffraction (XRD). The results showed that the films were nano-crystalline diamond films positively. Impress method was used to examine the adhesion between diamond film and the substrate. When deposition time is 1.5h, the adhesion between diamond film and the copper substrate is better than the others. When it was 2.5h or longer, because the graphite layers existed as intermediate, the adherence between the diamond films and copper substrates was very poor. Therefore, the diamond films were easily peeled off from the substrates. Otherwise, the second stage called annealing process after the deposition played an important role to the adhesion. The films would be easily peeled off by curling without the annealing process.

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