Patterning of Microwave Plasma Deposited Diamond Films

1990 ◽  
Vol 189 ◽  
Author(s):  
Moeljanto W. Leksono ◽  
Howard R. Shanks
Keyword(s):  
Microwave Plasma ◽  
Crystalline Silicon ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Substrate Quality ◽  
Plasma Chemical Vapor Deposition ◽  
Microwave Plasma Cvd ◽  
Lift Off ◽  
Diamond Paste

ABSTRACTPatterning has been successfully performed on diamond films deposited on polished silicon wafers from CH4 and H2 gases using microwave plasma chemical vapor deposition. The selectivity was achieved using a lift off process on silicon wafers which had been polished with diamond paste. The lift off process involves deposition and patterning of a thin ZnO film followed by deposition of amorphous silicon using a glow discharge technique. This is followed by microwave plasma CVD of the diamond film. The film is deposited selectively on the crystalline silicon areas of the substrate. Quality and patterning resolution of the resulting diamond films have been determined.

Residual Stress Analysis of Microwave Plasma CVD Diamond Films

2005 ◽  
Vol 495-497 ◽  
pp. 1359-1364 ◽  
Author(s):  
Leng Chen ◽  
Wei Min Mao ◽  
Fan Xiu Lu ◽  
Ping Yang
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Thermal Stresses ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Orientation Distribution ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Microwave Plasma Cvd

The residual stress and crystallographic texture of diamond films were investigated in the present work. The diamond films were synthesized on (100) silicon wafer by Microwave Plasma Chemical Vapor deposition (MPCVD). Then the residual stresses of the films were measured by X-ray diffractometer equipped with the two-dimensional detector. The residual stresses can be classified into two categories, i.e., the intrinsic stresses and the thermal stresses. It was shown that the thermal stresses were compressive in the temperature range studied and the intrinsic stresses were tensile. The crystallographic textures of the films were measured by X-ray diffractometer with the method of pole figure and orientation distribution function (ODF). The experimental results suggest that the crystallographic textures of the films depend upon the deposition temperature and methane flow rates, and the components and intensity of crystallographic textures have effect on the residual stresses in diamond films to a certain extent.

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Nano-Crystalline Diamond Films Deposited on Copper Substrate by MPCVD Method

2011 ◽  
Vol 117-119 ◽  
pp. 1310-1314
Author(s):  
Xing Rui Li ◽  
Xin Wei Shi ◽  
Ning Yao ◽  
Xin Chang Wang
Keyword(s):  
Diamond Film ◽  
Deposition Time ◽  
Microwave Plasma ◽  
Copper Substrate ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Adhesive Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Nano Crystalline

Nano-crystalline diamond (NCD) films with good adhesion were deposited on flexible copper substrate with Ni interlayer by Microwave Plasma Chemical Vapor Deposition (MPCVD). In this paper, two-stage method was used to improve the adhesion between the copper substrates and the diamond films. The effect of deposition time of the first stage on the morphology, crystal structure, non-diamond phase and adhesive properties of diamond films was investigated. The performance and structure of the diamond films were studied by Scanning Electron Microscope (SEM), Raman Spectroscopy (Raman) and X-Ray Diffraction (XRD). The results showed that the films were nano-crystalline diamond films positively. Impress method was used to examine the adhesion between diamond film and the substrate. When deposition time is 1.5h, the adhesion between diamond film and the copper substrate is better than the others. When it was 2.5h or longer, because the graphite layers existed as intermediate, the adherence between the diamond films and copper substrates was very poor. Therefore, the diamond films were easily peeled off from the substrates. Otherwise, the second stage called annealing process after the deposition played an important role to the adhesion. The films would be easily peeled off by curling without the annealing process.

Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 2138-2146 ◽  
Author(s):  
G. Shu ◽  
V. G. Ralchenko ◽  
A. P. Bolshakov ◽  
E. V. Zavedeev ◽  
A. A. Khomich ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Surface Relief ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Step Growth ◽  
Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

Growth of Highly (110) Oriented Diamond Film by Microwave Plasma Chemical Vapor Deposition

2018 ◽  
Vol 281 ◽  
pp. 893-899 ◽  
Author(s):  
Yi Fan Xi ◽  
Jian Huang ◽  
Ke Tang ◽  
Xin Yu Zhou ◽  
Bing Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Nucleation Stage

In this study, we propose a simple and effective approach to enhance (110) orientation in diamond films grown on (100) Si substrates by microwave plasma chemical vapor deposition. It is found that the crystalline structure of diamond films strongly rely on the CH4 concentration in the nucleation stage. Under the same growth condition, when the CH4 concentration is less than 7% (7%) in the nucleation stage, the diamond films exhibit randomly oriented structure; once the value exceeds 7%, the deposited films are strongly (110) oriented. It could be verified by experiments that the formation of (110) orientation in diamond films are related to the high nucleation density and high fraction of diamond-like carbon existing in nucleation samples.

A Study of the Origin of Band-A Emission in Homoepitaxial Diamond Thin Films

1999 ◽  
Vol 588 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Hideyuki Watanabe ◽  
Sadanori Yamanaka ◽  
Hideyo Okushi ◽  
Koji Kajimura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Transmission Electron ◽  
Excitonic Emission

AbstractThe band-A emission (around 2.8 eV) observed in high quality (device-grade) homoepitaxial diamond films grown by microwave-plasma chemical vapor deposition (CVD) was studied by means of scanning cathodoluminescence spectroscopy and high-resolution transmission electron microscopy. Recent progress in our study on homoepitaxial diamond films was obtained through the low CH4/H2 conditions by CVD. These showed atomically flat surfaces and the excitonic emission at room temperature, while the band-A emission (2.95 eV) decreased. Using these samples, we found that the band-A emission only appeared at unepitaxial crystallites (UC) sites, while other flat surface parts still showed the excitonic emission. High-resolution transmission electron microscopy revealed that there were grain boundaries which contained π-bonds in UC. This indicates that one of the origin of the band-A emission in diamond films is attributed to π bonds of grain boundaries.

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