Homoepitaxial growth of high quality thick diamond film with microwave plasma CVD technique

2011 ◽  
Vol 1282 ◽  
Author(s):  
Hong-Xing Wang ◽  
Noritaka Ishigaki ◽  
Toshiki Ohkawa ◽  
Shinichi Kokami ◽  
Hideo Inoue ◽  
...  
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
High Quality ◽  
Plasma Chemical Vapor Deposition ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Microwave Plasma Cvd

AbstractA growth of high quality thick diamond film has been carried out on high pressure and high temperature diamond substrate by microwave plasma chemical vapor deposition system. First, the effect of growth parameters on the growth film morphologies was investigated, indicating that the diamond film is very sensitive to the growth temperature and input microwave power. Then, sample holders with different geometries were used in our experiment, illustrating that high quality diamond film can be grown by using the sample holder with flat surface. Finally, the characterization of the as grown samples has been carried out.

scholarly journals Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 888
Author(s):  
Pengfei Zhang ◽  
Weidong Chen ◽  
Longhui Zhang ◽  
Shi He ◽  
Hongxing Wang ◽  
...  
Keyword(s):  
Methane Concentration ◽  
Flat Surface ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
High Quality ◽  
Effect Analysis ◽  
Plasma Chemical Vapor Deposition ◽  
Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

Nano-Crystalline Diamond Films Deposited on Copper Substrate by MPCVD Method

2011 ◽  
Vol 117-119 ◽  
pp. 1310-1314
Author(s):  
Xing Rui Li ◽  
Xin Wei Shi ◽  
Ning Yao ◽  
Xin Chang Wang
Keyword(s):  
Diamond Film ◽  
Deposition Time ◽  
Microwave Plasma ◽  
Copper Substrate ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Annealing Process ◽  
Adhesive Properties ◽  
Plasma Chemical Vapor Deposition ◽  
Nano Crystalline

Nano-crystalline diamond (NCD) films with good adhesion were deposited on flexible copper substrate with Ni interlayer by Microwave Plasma Chemical Vapor Deposition (MPCVD). In this paper, two-stage method was used to improve the adhesion between the copper substrates and the diamond films. The effect of deposition time of the first stage on the morphology, crystal structure, non-diamond phase and adhesive properties of diamond films was investigated. The performance and structure of the diamond films were studied by Scanning Electron Microscope (SEM), Raman Spectroscopy (Raman) and X-Ray Diffraction (XRD). The results showed that the films were nano-crystalline diamond films positively. Impress method was used to examine the adhesion between diamond film and the substrate. When deposition time is 1.5h, the adhesion between diamond film and the copper substrate is better than the others. When it was 2.5h or longer, because the graphite layers existed as intermediate, the adherence between the diamond films and copper substrates was very poor. Therefore, the diamond films were easily peeled off from the substrates. Otherwise, the second stage called annealing process after the deposition played an important role to the adhesion. The films would be easily peeled off by curling without the annealing process.

Determination of diamond [100] and [111] growth rate and formation of highly oriented diamond film by microwave plasma-assisted chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3115-3123 ◽  
Author(s):  
Hideaki Maeda ◽  
Kyo Ohtsubo ◽  
Miki Irie ◽  
Nobutaka Ohya ◽  
Katsuki Kusakabe ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Relative Growth Rate ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Relative Growth ◽  
Homoepitaxial Growth ◽  
Novel Method

A novel method was proposed for measuring the epitaxial growth rate of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD). Cubo-octahedral crystals were formed on an Si(100) wafer and were used as the substrate in the homoepitaxial growth. Growth rates of the {100} and {111} were simultaneously measured from the change in the top view size of crystals. Thus, the relative growth rate of {100} to {111} was obtained without any limitation of its value. The homoepitaxial growth rate was strongly affected by the type of diamond faces, CH4 concentration in the gas phase, and deposition temperature. The growth rate of {100} was more dependent on CH4 concentration than that of {111}, while the activation energy for the [100] growth was about half that for the [111] growth. These tendencies were in accord with growth mechanisms proposed for each diamond plane. Reaction conditions were optimized based on the relative growth rate of (100) to (111) planes, and a highly oriented (100) diamond film with a quite smooth surface was formed on an Si(100) wafer.

Sign in / Sign up

Export Citation Format

Share Document