Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors

2015 ◽  
Vol 1746 ◽  
Author(s):  
Heather C. Chiamori ◽  
Nicholas Broad ◽  
Chetan Angadi ◽  
Ruth Miller ◽  
Caitlin Chapin ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Uv Light ◽  
Harsh Environments ◽  
Voltage Response ◽  
Uv Photodetectors ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Msm Photodetector ◽  
Corrosive Environments ◽  
Ultraviolet Photodetectors

ABSTRACTRadiation-tolerant materials, sensors and electronics can enable lightweight space subsystems with reduced packaging requirements and increased operation lifetimes. Such technology can be used within extreme harsh environments related to space exploration, radiation medicine and power generation (combustion and nuclear). Gallium nitride (GaN), a ceramic semiconductor material, is a candidate material due to its stability within high-radiation, high-temperature and chemically corrosive environments. In addition, the wide bandgap of GaN (3.4 eV) can be leveraged for ultraviolet (UV) wavelength photodetection. In metal-semiconductor-metal (MSM) photodetector architectures using Schottky contacts, transparent electrodes (e.g., graphene) can increase sensitivity and improve overall device response. Here we present fabrication and characterization of GaN-based UV photodetectors using graphene electrodes irradiated up to 200 krad total ionizing dose (TID) then tested under UV light and dark conditions. For current-voltage measurements taken at 90, 120 and 200 krad TID, the current-voltage response does not vary significantly. From 90 to 120 krad TID, the responsivity shifts by 2% before dropping off at 200 krad TID. These initial findings suggest that graphene/GaN MSM UV photodetectors can provide robust operation within extreme harsh environments.

ZINC OXIDE NANOPARTICLES FOR ULTRAVIOLET PHOTODETECTION

2011 ◽  
Vol 20 (01) ◽  
pp. 183-194 ◽  
Author(s):  
SHAYLA SAWYER ◽  
LIQIAO QIN ◽  
CHRISTOPHER SHING
Keyword(s):  
Zinc Oxide ◽  
Gallium Nitride ◽  
Zno Nanoparticles ◽  
Green Emission ◽  
Synthesis Process ◽  
Voltage Response ◽  
Zno Nanoparticle ◽  
Linear Current ◽  
Current Voltage ◽  
Lift Off

Zinc Oxide ( ZnO ) nanoparticles were created by a top-down wet-chemistry synthesis process ( ZnO - A ) and then coated with polyvinyl-alcohol (PVA) ( ZnO - U ). In ZnO - U , strong UV emission was apparent while the parasitic green emission, which normally appears in ZnO suspensions, was suppressed. A standard lift-off process via e-beam lithography was used to fabricate a detector by evaporating Aluminum ( Al ) as ohmic electrodes on the ZnO nanoparticle film. Photoconductivity experiments showed that linear current-voltage response were achieved and the ZnO - U nanoparticles based detector had a ratio of UV photo-generated current more than 5 times better than that of the ZnO - A based detector. In addition, non-linear current-voltage responses were observed when interdigitated finger Gold ( Au ) contacts were deposited on ZnO - U . The UV generated current to dark current ratios were between 4 and 7 orders of magnitude, showing better performance than the photodetector with Al contacts. ZnO - U were also deposited on Gallium Nitride ( GaN ) and Aluminum Gallium Nitride ( AlGaN ) substrates to create spectrally selective photodetectors. The responsivity of detector based on AlGaN is twice that of commercial UV enhanced Silicon photodiodes. These results confirmed that ZnO nanoparticles coating with PVA is a good material for small-signal, visible blind, and wavelength selective UV detection.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

2014 ◽  
Author(s):  
Heather C. Chiamori ◽  
Chetan Angadi ◽  
Ateeq Suria ◽  
Ashwin Shankar ◽  
Minmin Hou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Metal Semiconductor Metal ◽  
Effects Of Radiation ◽  
Ultraviolet Photodetectors

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

2008 ◽  
Vol 6 (8) ◽  
pp. 615-618 ◽  
Author(s):  
张军琴 Junqin Zhang ◽  
杨银堂 Yintang Yang ◽  
娄利飞 Lifei Lou ◽  
刘莉 Yan Zhao
Keyword(s):  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ultraviolet Photodetectors

scholarly journals Enhanced Performance of Mg0.1Zn0.9O UV Photodetectors Using Photoelectrochemical Treatment and Silica Nanospheres

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Yu-Chang Lin ◽  
Meng-Ju Lee ◽  
Wu-Yih Uen ◽  
Kondepudy Sreenivas
Keyword(s):  
Active Layer ◽  
Bias Voltage ◽  
Incident Light ◽  
Atomic Layer ◽  
Silica Nanospheres ◽  
Uv Photodetectors ◽  
Layer Deposition ◽  
Metal Semiconductor Metal ◽  
Uv Visible ◽  
Ultraviolet Photodetectors

The Mg0.1Zn0.9O films were grown using atomic layer deposition (ALD) system and applied to metal-semiconductor-metal ultraviolet photodetectors (MSM-UPDs) as an active layer. To suppress the dangling bonds on the Mg0.1Zn0.9O surface, the photoelectrochemical (PEC) treatment was used to passivate the Mg0.1Zn0.9O surface, which could reduce the dark current of the MSM-UPDs about one order. Beside, to increase more incident light into the Mg0.1Zn0.9O active layer of the MSM-UPDs, the 500-nm-diameter silica nanospheres were spin-coated on the Mg0.1Zn0.9O active layer to improve the antireflection capability at the wavelength of 340 nm. The reflectivity of the Mg0.1Zn0.9O films with silica nanospheres antireflection layer decreased about 7.0% in comparison with the Mg0.1Zn0.9O films without silica nanospheres. The photocurrent and UV-visible ratio of the passivated Mg0.1Zn0.9O MSM-UPDs with antireflection layer were enhanced to 5.85 μA and1.44×104, respectively, at the bias voltage of 5 V. Moreover, the noise equivalent power and the specific detectivity of the passivated Mg0.1Zn0.9O MSM-UPDs with antireflection layer were decreased to2.60×10-13 W and increased to1.21×1012 cmHz1/2W−1, respectively, at the bias voltage of 5 V. According to the above mentions, the PEC treatment and silica nanospheres antireflection layer could effectively enhance the performance of Mg0.1Zn0.9O MSM-UPDs.

scholarly journals Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates

2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Kuen-Hsien Wu
Keyword(s):  
Oxidation Process ◽  
Uv Light ◽  
Low Cost ◽  
Buffer Layers ◽  
Electrochemical Anodization ◽  
Current Ratio ◽  
Uv Photodetectors ◽  
Si Substrates ◽  
Ultraviolet Photodetectors ◽  
Visible Blind

This paper demonstrated the fabrication and optoelectronic characteristics of ZnO ultraviolet (UV) photodetectors fabricated on Si substrates with oxidized nano-porous-Si (ONPS) buffer layers. ONPS layers were prepared on the surfaces of Si substrates by use of an electrochemical anodization technique following a rapid-thermal-oxidation process. Experimental results indicated that application of ONPS buffer layers not only improved the crystallinty of the deposited ZnO thin films but also greatly restricted the visible-to-infrared photoresponse that was generated from the light absorption of Si substrates. The developed ZnO-on-ONPS photodiodes achieved high photoresponsivity for the incident UV light of 300 ∼ 400 nm and got a large photo-to-dark current ratio up to 104 at wavelength of 375 nm under a bias of 5 V. Therefore, ZnO on ONPS provides a highly potential approach for the development of low-cost visible-blind UV photodetectors.

Photocurrent Enhancement between Two Coplanar Schottky-Barriers on Silicon MSM Photodetector

2013 ◽  
Vol 684 ◽  
pp. 265-268
Author(s):  
Narin Atiwongsangthong ◽  
Surasak Niemcharoen
Keyword(s):  
Optical Signal ◽  
Schottky Barriers ◽  
Visible Range ◽  
Avalanche Multiplication ◽  
Low Frequencies ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Noise Measurements ◽  
Signal Demodulation ◽  
Msm Photodetector

Gain properties of dc and ac photocurrent generated between two Schottky barriers coplanarly placed on silicon metal-semiconductor-metal photodetector have been investigated experimentally. The test structure has two square Mo/n-Si Schottky barrier junctions on an n-type silicon substrate with a resistivity of 9-12 Ω-cm and the junction internal separation is 20 m. The current-voltage (I-V) characteristics under illumination in visible range showed a rapid increase in the photocurrent at higher bias region. From the I-V characteristics and noise measurements, increase in photocurrent was ascribed to avalanche multiplication of carriers photogenerated in the reverse-biased Schottky junction. From observation of optical signal demodulation at low frequencies (10 kHz and 50 kHz), it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved respectively.

ZnO nanowire UV photodetector with multiple channels

2018 ◽  
Vol 35 (1) ◽  
pp. 18-23 ◽  
Author(s):  
Guohua Jiang ◽  
Dongmei Zhao ◽  
Bo Zhao
Keyword(s):  
Design Methodology ◽  
Uv Light ◽  
Alternating Current ◽  
Optoelectronic Properties ◽  
Multiple Channels ◽  
Zno Nanowire ◽  
Uv Photodetector ◽  
Content Type ◽  
Uv Photodetectors ◽  
Current Voltage

Purpose The purpose of this paper is to investigate the optoelectronic properties of the multichannel ZnO UV photodetectors. Design/methodology/approach ZnO nanowires were assembled by dielectrophoresis for the UV photodetectors. Different ZnO channels were adjusted by different alternating current voltages and investigated for UV optoelectronic properties. Findings The number of the ZnO channels increases with the enhancing alternating current voltage. Optimum performance of the UV photodetectors is obtained with more channels. Originality/value Dielectrophoresis is a promising method for controllable assembly of multichannel ZnO photodetectors. ZnO photodetectors with more channels demonstrate a good response to 380-nm UV light, which shows great potential application in UV photodetector.

Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors

2021 ◽  
Author(s):  
Pei-Te Lin ◽  
Wen-Chun Huang ◽  
Yu-Qian Lou ◽  
Cing-Yuan Yan ◽  
Yu-Syuan Lin ◽  
...  
Keyword(s):  
Solution Processed ◽  
Uv Photodetectors ◽  
Metal Semiconductor Metal
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