Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors

2015 ◽  
Author(s):  
Heather C. Chiamori ◽  
Ruth Miller ◽  
Ateeq Suria ◽  
Nicholas Broad ◽  
Debbie G. Senesky
Keyword(s):  
Gallium Nitride ◽  
Irradiation Effects ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

2014 ◽  
Author(s):  
Heather C. Chiamori ◽  
Chetan Angadi ◽  
Ateeq Suria ◽  
Ashwin Shankar ◽  
Minmin Hou ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Metal Semiconductor Metal ◽  
Effects Of Radiation ◽  
Ultraviolet Photodetectors

Irradiation Response of Graphene Enhanced Gallium Nitride Metal-Semiconductor-Metal Ultraviolet Photodetectors

2015 ◽  
Vol 1746 ◽  
Author(s):  
Heather C. Chiamori ◽  
Nicholas Broad ◽  
Chetan Angadi ◽  
Ruth Miller ◽  
Caitlin Chapin ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Uv Light ◽  
Harsh Environments ◽  
Voltage Response ◽  
Uv Photodetectors ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Msm Photodetector ◽  
Corrosive Environments ◽  
Ultraviolet Photodetectors

ABSTRACTRadiation-tolerant materials, sensors and electronics can enable lightweight space subsystems with reduced packaging requirements and increased operation lifetimes. Such technology can be used within extreme harsh environments related to space exploration, radiation medicine and power generation (combustion and nuclear). Gallium nitride (GaN), a ceramic semiconductor material, is a candidate material due to its stability within high-radiation, high-temperature and chemically corrosive environments. In addition, the wide bandgap of GaN (3.4 eV) can be leveraged for ultraviolet (UV) wavelength photodetection. In metal-semiconductor-metal (MSM) photodetector architectures using Schottky contacts, transparent electrodes (e.g., graphene) can increase sensitivity and improve overall device response. Here we present fabrication and characterization of GaN-based UV photodetectors using graphene electrodes irradiated up to 200 krad total ionizing dose (TID) then tested under UV light and dark conditions. For current-voltage measurements taken at 90, 120 and 200 krad TID, the current-voltage response does not vary significantly. From 90 to 120 krad TID, the responsivity shifts by 2% before dropping off at 200 krad TID. These initial findings suggest that graphene/GaN MSM UV photodetectors can provide robust operation within extreme harsh environments.

Neutron irradiation effects on gallium nitride-based Schottky diodes

2013 ◽  
Vol 103 (16) ◽  
pp. 162106 ◽  
Author(s):  
Chung-Han Lin ◽  
Evan J. Katz ◽  
Jie Qiu ◽  
Zhichun Zhang ◽  
Umesh K. Mishra ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Neutron Irradiation ◽  
Schottky Diodes ◽  
Irradiation Effects

Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

2000 ◽  
Vol 77 (3) ◽  
pp. 444-446 ◽  
Author(s):  
Z. M. Zhao ◽  
R. L. Jiang ◽  
P. Chen ◽  
D. J. Xi ◽  
Z. Y. Luo ◽  
...  
Keyword(s):  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors
Sign in / Sign up

Export Citation Format

Share Document