scholarly journals Enhanced Performance of Mg0.1Zn0.9O UV Photodetectors Using Photoelectrochemical Treatment and Silica Nanospheres

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hsin-Ying Lee ◽  
Yu-Chang Lin ◽  
Meng-Ju Lee ◽  
Wu-Yih Uen ◽  
Kondepudy Sreenivas
Keyword(s):  
Active Layer ◽  
Bias Voltage ◽  
Incident Light ◽  
Atomic Layer ◽  
Silica Nanospheres ◽  
Uv Photodetectors ◽  
Layer Deposition ◽  
Metal Semiconductor Metal ◽  
Uv Visible ◽  
Ultraviolet Photodetectors

The Mg0.1Zn0.9O films were grown using atomic layer deposition (ALD) system and applied to metal-semiconductor-metal ultraviolet photodetectors (MSM-UPDs) as an active layer. To suppress the dangling bonds on the Mg0.1Zn0.9O surface, the photoelectrochemical (PEC) treatment was used to passivate the Mg0.1Zn0.9O surface, which could reduce the dark current of the MSM-UPDs about one order. Beside, to increase more incident light into the Mg0.1Zn0.9O active layer of the MSM-UPDs, the 500-nm-diameter silica nanospheres were spin-coated on the Mg0.1Zn0.9O active layer to improve the antireflection capability at the wavelength of 340 nm. The reflectivity of the Mg0.1Zn0.9O films with silica nanospheres antireflection layer decreased about 7.0% in comparison with the Mg0.1Zn0.9O films without silica nanospheres. The photocurrent and UV-visible ratio of the passivated Mg0.1Zn0.9O MSM-UPDs with antireflection layer were enhanced to 5.85 μA and1.44×104, respectively, at the bias voltage of 5 V. Moreover, the noise equivalent power and the specific detectivity of the passivated Mg0.1Zn0.9O MSM-UPDs with antireflection layer were decreased to2.60×10-13 W and increased to1.21×1012 cmHz1/2W−1, respectively, at the bias voltage of 5 V. According to the above mentions, the PEC treatment and silica nanospheres antireflection layer could effectively enhance the performance of Mg0.1Zn0.9O MSM-UPDs.

scholarly journals Synthesis of SnO2-ZnO Core-Shell Nanowires and Their Optoelectronic Properties

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Ko-Ying Pan ◽  
Yu-Hung Lin ◽  
Po-Sheng Lee ◽  
Jyh-Ming Wu ◽  
Han C. Shih
Keyword(s):  
Potential Application ◽  
Recovery Time ◽  
Tin Dioxide ◽  
Uv Light ◽  
Atomic Layer ◽  
Core Shell ◽  
Uv Photodetectors ◽  
Zinc Oxides ◽  
Layer Deposition ◽  
Shell Nanowires

Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO2-ZnO core-shell nanowires is 100 nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 925 Ω, which is much lower than pure SnO2nanowires (3.6 × 106 Ω). The result of UV light test shows that the recovery time of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO2nanowires (938 seconds). These results demonstrated that the SnO2-ZnO core-shell nanowires have potential application as UV photodetectors with high photon-sensing properties.

scholarly journals A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 969
Author(s):  
Haiyang Xu ◽  
Xingwei Ding ◽  
Jie Qi ◽  
Xuyong Yang ◽  
Jianhua Zhang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Active Layer ◽  
Dielectric Layer ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Threshold Voltage Shift ◽  
Layer Deposition

In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.

Influence of active layer thickness and annealing in zinc oxide TFT grown by atomic layer deposition

2010 ◽  
Vol 42 (6-7) ◽  
pp. 955-958 ◽  
Author(s):  
Cheol Hyoun Ahn ◽  
Chang Ho Woo ◽  
SooYeon Hwang ◽  
Jeong Yong Lee ◽  
Hyung Koun Cho ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Layer Thickness ◽  
Active Layer ◽  
Atomic Layer ◽  
Active Layer Thickness ◽  
Oxide Tft ◽  
Layer Deposition

scholarly journals Investigation of Ga2O3-Based Deep Ultraviolet Photodetectors Using Plasma-Enhanced Atomic Layer Deposition System

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6159
Author(s):  
Shao-Yu Chu ◽  
Meng-Xian Shen ◽  
Tsung-Han Yeh ◽  
Chia-Hsun Chen ◽  
Ching-Ting Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Bandgap Energy ◽  
X Ray ◽  
Active Layers ◽  
Layer Deposition ◽  
Measurement Results ◽  
Ultraviolet C ◽  
Ultraviolet Photodetectors

In this work, Ga2O3 films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O2) plasma. To improve the quality of Ga2O3 films, they were annealed in an O2 ambient furnace system for 15 min at 700, 800, and 900 °C, respectively. The performance improvement was verified from the measurement results of X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The optical bandgap energy of the Ga2O3 films decreased with an increase of annealing temperatures. Metal-semiconductor-metal ultraviolet C photodetectors (MSM UVC-PDs) with various Ga2O3 active layers were fabricated and studied in this work. The cut-off wavelength of the MSM UVC-PDs with the Ga2O3 active layers annealed at 800 °C was 250 nm. Compared with the performance of the MSM UVC-PDs with the as-grown Ga2O3 active layers, the MSM UVC-PDs with the 800 °C-annealed Ga2O3 active layers under a bias voltage of 5 V exhibited better performances including photoresponsivity of 22.19 A/W, UV/visible rejection ratio of 5.98 × 104, and detectivity of 8.74 × 1012 cmHz1/2W−1.

Sign in / Sign up

Export Citation Format

Share Document