Contact hole shrink and multiplication by directed self-assembly of block copolymers: from material to integration

2015 ◽  
Vol 1750 ◽  
Author(s):  
Raluca Tiron ◽  
Xavier Chevalier ◽  
Ahmed Gharbi ◽  
Maxime Argoud ◽  
Patricia Pimenta-Barros ◽  
...  
Keyword(s):  
High Resolution ◽  
Block Copolymers ◽  
Self Assembly ◽  
Low Cost ◽  
Advanced Characterization ◽  
High Potential ◽  
Assembly Process ◽  
Promising Alternative ◽  
Lithography Process ◽  
Pattern Density

ABSTRACTDensity multiplication of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitation of conventional lithography. Using the 300mm pilot line available in LETI and Arkema’s materials, the main objective is to integrate DSA directly into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. Thus we investigate the potential of DSA to address contact and via level patterning by performing either CD shrink or contact multiplication. Our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Lithographic performances of block copolymers are evaluated both for contact shrink and contact doubling. Furthermore, advanced characterization technics are used to monitor in-film self-assembly process. These results show that DSA has a high potential to be integrated directly into the conventional CMOS lithography process in order to achieve high resolution contact holes.

Lithography Process Challenges for 3D and 2.5D Applications

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000398-000424
Author(s):  
Doug Shelton ◽  
Tomii Kume
Keyword(s):  
High Resolution ◽  
Process Optimization ◽  
Mass Production ◽  
Low Cost ◽  
High Density ◽  
Through Silicon Via ◽  
Key Technology ◽  
Lithography Process ◽  
Advanced Packaging

Lithography process optimization is a key technology enabling mass production of high-density interconnects using 3D and 2.5D technologies. In this paper, Canon will continue its discussion of lithography optimization of thick-resist profiles and overlay accuracy to increase process margins for Through-Silicon Via (TSV) and Redistribution Layer (RDL) applications. Canon will also provide updates on the FPA-5510iV and FPA-5510iZ i-line steppers that are gaining acceptance as high-resolution, and low-cost lithography solutions for aggressive advanced packaging, 3D and 2.5D applications.

Lithography Process Optimization for 3D and 2.5D Applications

2013 ◽  
Vol 2013 (1) ◽  
pp. 000790-000793 ◽  
Author(s):  
Doug Shelton ◽  
Tomii Kume
Keyword(s):  
High Resolution ◽  
Process Optimization ◽  
Preliminary Data ◽  
Mass Production ◽  
Low Cost ◽  
High Density ◽  
Through Silicon Via ◽  
Key Technology ◽  
Lithography Process ◽  
Advanced Packaging

Lithography process optimization is a key technology enabling mass production of high-density interconnects using 3D and 2.5D technologies. In this paper, Canon continues its investigation of lithography optimization of thick-resist profiles and overlay accuracy to increase process margins for Through-Silicon Via (TSV) and Redistribution Layer (RDL) applications. Canon will also provide updates on the FPA-5510iV and FPA-5510iZ i-line steppers that are gaining acceptance as high-resolution, and low-cost lithography solutions for aggressive advanced packaging, 3D and 2.5D applications also preliminary data illustrating 450 mm wafer process challenges.

Pattern density multiplication by direct self assembly of block copolymers: toward 300mm CMOS requirements

2012 ◽  
Author(s):  
R. Tiron ◽  
X. Chevalier ◽  
S. Gaugiran ◽  
J. Pradelles ◽  
H. Fontaine ◽  
...  
Keyword(s):  
Block Copolymers ◽  
Self Assembly ◽  
Pattern Density

Self-Assembly Process of Different Poly(oxystyrene)-Poly(oxyethylene) Block Copolymers: Spontaneous Formation of Vesicular Structures and Elongated Micelles

Langmuir ◽  
2008 ◽  
Vol 24 (14) ◽  
pp. 7107-7116 ◽  
Author(s):  
Josué Juárez ◽  
Pablo Taboada ◽  
Miguel A. Valdez ◽  
Víctor Mosquera
Keyword(s):  
Block Copolymers ◽  
Self Assembly ◽  
Assembly Process ◽  
Spontaneous Formation

Contact Hole Shrinking of Directed Self-Assembly and Its Application Based on Simulation Approach

2015 ◽  
Vol 15 (10) ◽  
pp. 8183-8186
Author(s):  
Sang-Kon Kim
Keyword(s):  
Self Assembly ◽  
Low Cost ◽  
Process Window ◽  
Optical Proximity Correction ◽  
Lithography Process ◽  
Consistent Field ◽  
Self Consistent Field ◽  
Self Consistent Field Theory ◽  
Thermal Reflow ◽  
Good Agreement

Directed self-assembly (DSA) of block copolymers (BCPs) has become an intense field of study as a complementary technique to conventional lithography for 1×-nm semiconductor patterning. DSA contact hole (C/H) shrinking is a possible implemental technique in the DSA process. In this paper, a DSA C/H shrinking is fully modeled and simulated by using a self-consistent field theory (SCFT). Simulation results show good agreement with experiment results. In terms of this simulation, the potential of DSA C/H shrinking with thermal reflow is integrated into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. The optical proximity correction (OPC) of DSA C/H shrinking due to prepattern C/H and pitch can increase process window for DSA C/H shrinking.

Aggregation-induced emission from the crowded coronal chains of block copolymer micelles

2020 ◽  
Vol 11 (29) ◽  
pp. 4706-4713 ◽  
Author(s):  
Siyu Wang ◽  
Bixin Jin ◽  
Gangfeng Chen ◽  
Yunjun Luo ◽  
Xiaoyu Li
Keyword(s):  
Block Copolymer ◽  
Block Copolymers ◽  
Self Assembly ◽  
The Self ◽  
Assembly Process ◽  
Spatial Confinement ◽  
Aggregation Induced Emission ◽  
Block Copolymer Micelles ◽  
Copolymer Micelles

Aggregation-induced emission (AIE) was triggered via the spatial confinement in the coronal chains in block copolymers upon micellization, even with very low content of AIE groups attached, and this could be used to monitor the self-assembly process.

Versatile self-assembled graphene oxide membranes obtained under ambient conditions by using a water–ethanol suspension

2017 ◽  
Vol 5 (5) ◽  
pp. 2132-2142 ◽  
Author(s):  
Liviu Cosmin Cotet ◽  
Klára Magyari ◽  
Milica Todea ◽  
Mircea Cristian Dudescu ◽  
Virginia Danciu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Self Assembly ◽  
Low Cost ◽  
Assembly Process ◽  
Ambient Conditions ◽  
Free Standing ◽  
Air Liquid Interface ◽  
Oxide Membranes ◽  
Ethanol Fraction ◽  
Graphene Oxide Membranes

The study reports a low cost and scalable pathway for preparing free-standing GO membranes by a self-assembly process under ambient conditions at an air–liquid interface of an isopycnic sorted GO water–ethanol fraction.

Fabrication of high-resolution reflective scale grating for an optical encoder using a patterned self-assembly process

2016 ◽  
Vol 26 (7) ◽  
pp. 075015
Author(s):  
Shanjin Fan ◽  
Weitao Jiang ◽  
Xuan Li ◽  
Haoyu Yu ◽  
Biao Lei ◽  
...  
Keyword(s):  
High Resolution ◽  
Self Assembly ◽  
Assembly Process ◽  
Optical Encoder

Hierarchically Engineered Nanostructures from Compositionally Anisotropic Molecular Building Blocks

2022 ◽  
Author(s):  
Ruiqi Liang ◽  
Yazhen Xue ◽  
Xiaowei Fu ◽  
An Le ◽  
Qingliang Song ◽  
...  
Keyword(s):  
Block Copolymers ◽  
Nanostructured Materials ◽  
Self Assembly ◽  
Structural Parameters ◽  
Hierarchical Structures ◽  
Building Blocks ◽  
Assembly Process ◽  
Multifunctional Materials ◽  
Assembly Strategy ◽  
Molecular Building Blocks

The inability to synthesize hierarchical structures with independently tailored nanoscale and mesoscale features limits the discovery of next-generation multifunctional materials. We present a programmable molecular self-assembly strategy to craft nanostructured materials with a variety of phase-in-phase hierarchical morphologies. The compositionally anisotropic building blocks employed in the assembly process are formed by multi-component graft block copolymers (GBCPs) containing sequence-defined side chains. The judicious design of various structural parameters in the GBCPs enables broadly tunable compositions, morphologies, and lattice parameters across the nanoscale and mesoscale in the assembled structures. Our strategy introduces new design principles for the efficient creation of complex hierarchical structures and provides a facile synthetic platform to access nanomaterials with multiple precisely integrated functionalities.

scholarly journals Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Polymers ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 2432 ◽  
Author(s):  
Christian Pinto-Gómez ◽  
Francesc Pérez-Murano ◽  
Joan Bausells ◽  
Luis Guillermo Villanueva ◽  
Marta Fernández-Regúlez
Keyword(s):  
Block Copolymers ◽  
Silicon Nanowires ◽  
Self Assembly ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
Nanoelectromechanical Systems ◽  
Proof Of Concept ◽  
Crystal Silicon ◽  
Nanomechanical Resonators ◽  
Mass Sensors

Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

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