scholarly journals Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Polymers ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 2432 ◽  
Author(s):  
Christian Pinto-Gómez ◽  
Francesc Pérez-Murano ◽  
Joan Bausells ◽  
Luis Guillermo Villanueva ◽  
Marta Fernández-Regúlez
Keyword(s):  
Block Copolymers ◽  
Silicon Nanowires ◽  
Self Assembly ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
Nanoelectromechanical Systems ◽  
Proof Of Concept ◽  
Crystal Silicon ◽  
Nanomechanical Resonators ◽  
Mass Sensors

Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

25 nm Single-Crystal Silicon Nanowires Fabricated by Anisotropic Wet Etching

2017 ◽  
Vol 17 (2) ◽  
pp. 1525-1529
Author(s):  
Hoang Manh Chu ◽  
Minh Van Nguyen ◽  
Hung Ngoc Vu ◽  
Kazuhiro Hane
Keyword(s):  
Single Crystal ◽  
Silicon Nanowires ◽  
Single Crystal Silicon ◽  
Wet Etching ◽  
Crystal Silicon

Micro-Patterning of Silicon by Frictional Interaction and Chemical Reaction

1998 ◽  
Vol 120 (2) ◽  
pp. 353-357 ◽  
Author(s):  
Dae-Eun Kim ◽  
Jae-Joon Yi
Keyword(s):  
Chemical Reaction ◽  
Low Cost ◽  
Three Dimensional ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Micro Electro Mechanical Systems ◽  
Micro Patterning ◽  
Frictional Interaction ◽  
Micro Structures ◽  
Micro Patterns

In this paper a novel and economical method of generating three-dimensional micro-patterns on single crystal silicon without the need for a mask is presented. The technique is based on the fundamental understanding of frictional interaction at light loads. Micro-patterning is done through a two-step process that comprises mechanical scribing and chemical etching. The basic idea is to induce micro-plastic deformation along a prescribed track through frictional interaction between the tool and the workpiece. Then, by exposing the surface to a chemical under controlled conditions, preferential chemical reaction is induced along the track to form hillocks about 5 μm wide and 1 μm high. This method of micro-machining may be used for making patterns in micro-electro-mechanical systems (MEMS) at low cost. Furthermore, this process demonstrates how microtribological processes can be utilized in the fabrication of micro-structures.

Surface Modification Energized by FIB: The Influence of Etch Rates & Aspect Ratio on Ripple Wavelengths

2006 ◽  
Vol 960 ◽  
Author(s):  
Warren MoberlyChan
Keyword(s):  
Aspect Ratio ◽  
Self Assembly ◽  
Focused Ion Beam ◽  
Process Development ◽  
Ion Beam ◽  
Natural Diamond ◽  
Single Crystal Silicon ◽  
Nanometer Scale ◽  
Crystal Silicon ◽  
Etch Rates

ABSTRACTIon beams have been used to modify surface topography, producing nanometer-scale modulations (and even subnanometer ripples in this work) that have potential uses ranging from designing self-assembly structures, to controlling stiction of micromachined surfaces, to providing imprint templates for patterned media. Modern computer-controlled Focused Ion Beam tools enable alternating submicron patterned zones of such ion-eroded surfaces, as well as dramatically increasing the rate of ion beam processing. The DualBeam FIB/SEM also expedites process development while minimizing the use of materials that may be precious (Diamond) and/or produce hazardous byproducts (Beryllium). A FIB engineer can prototype a 3-by-3-by-3 matrix of variables in tens of minutes and consume as little as zeptoliters of material; whereas traditional ion beam processing would require tens of days and tens of precious wafers. Saturation wavelengths have been reported for ripples on materials such as single crystal silicon or diamond (∼200nm); however this work achieves wavelengths >400nm on natural diamond. Conversely, Be can provide a stable and ordered 2-dimensional array of <40nm periodicity. Also ripples <0.4nm are fabricated on carbon-base surfaces, and these quantized picostructures are measured by HR-TEM and electron diffraction. Rippling is a function of material, ion beam, and angle; but is also controlled by chemical environment, redeposition, and aspect ratio. Ideally a material has a constant yield (atoms sputtered off per incident ion); however, pragmatic FIB processes, coupled with the direct metrological feedback in a DualBeam tool, reveal etch rates do not remain constant for nanometer-scale processing. Control of rippling requires controlled metrology, and robust software tools are developed to enhance metrology. In situ monitoring of the influence of aspect ratio and redeposition at the micron scale correlates to the rippling fundamentals that occur at the nanometer scale and are controlled by the boundary conditions of FIB processing.

Semi-automatic, volume production of silicon solar cells

1987 ◽  
Vol 65 (8) ◽  
pp. 892-896 ◽  
Author(s):  
R. E. Thomas ◽  
C. E. Norman ◽  
S. Varma ◽  
G. Schwartz ◽  
E. M. Absi
Keyword(s):  
Solar Cells ◽  
Single Crystal ◽  
Plasma Etching ◽  
Low Cost ◽  
Single Crystal Silicon ◽  
High Yield ◽  
Silicon Solar Cells ◽  
Crystal Silicon ◽  
Volume Production ◽  
P Type

A low-cost, high-yield technology for producing single-crystal silicon solar cells at high volumes, and suitable for export to developing countries, is described. The process begins with 100 mm diameter as-sawn single-crystal p-type wafers with one primary flat. Processing steps include etching and surface texturization, gaseous-source diffusion, plasma etching, and contacting via screen printing. The necessary adaptations of such standard processes as diffusion and plasma etching to solar-cell production are detailed. New process developments include a high-throughput surface-texturization technique, and automatic printing and firing of cell contacts.The technology, coupled with automated equipment developed specifically for the purpose, results in solar cells with an average efficiency greater than 12%, a yield exceeding 95%, a tight statistical spread on parameters, and a wide tolerance to starting substrates (including the first 100 mm diameter wafers made in Canada). It is shown that with minor modifications, the present single shift 500 kWp (kilowatt peak) per year capacity technology can be readily expanded to 1 MWp per year, adapted to square and polycrystalline substrates, and efficiencies increased above 13%.

scholarly journals Integrated freestanding single-crystal silicon nanowires: conductivity and surface treatment

2010 ◽  
Vol 22 (5) ◽  
pp. 055704 ◽  
Author(s):  
Chung-Hoon Lee ◽  
Clark S Ritz ◽  
Minghuang Huang ◽  
Michael W Ziwisky ◽  
Robert J Blise ◽  
...  
Keyword(s):  
Single Crystal ◽  
Surface Treatment ◽  
Silicon Nanowires ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Fabrication of single-crystal silicon nanowires based on surface wet adhesion

2015 ◽  
Vol 152 ◽  
pp. 94-97 ◽  
Author(s):  
Hoang Manh Chu ◽  
Minh Van Nguyen ◽  
Hung Ngoc Vu ◽  
Kazuhiro Hane
Keyword(s):  
Single Crystal ◽  
Silicon Nanowires ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Wet Adhesion
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