Nonvolatile memories based on AlOx embedded ZrHfO high-k gate dielectric

2014 ◽  
Vol 1691 ◽  
Author(s):  
Shumao Zhang ◽  
Yue Kuo ◽  
Xi Liu ◽  
Chi-Chou Lin
Keyword(s):  
Gate Dielectric ◽  
Dielectric Structure ◽  
Mos Capacitors ◽  
Hole Trapping ◽  
Nonvolatile Memories ◽  
High K ◽  
Positive Voltage ◽  
Voltage Dependent ◽  
Trapping Process ◽  
Negative Gate Voltage

ABSTRACTMOS capacitors with the ZrHfO/AlOx/ZrHfO high-k gate dielectric stack were prepared and characterized for memory functions. The device prefers to trap holes, i.e., under the negative gate voltage, rather than electrons, i.e., under the positive voltage. The hole-trapping process is time and voltage dependent. The weakly trapped holes are quickly released upon the remove of the stress voltage. However, more than 30% of the originally trapped holes can be retained in the device after 10 years. The AlOx embedded ZrHfO high-k stack is a suitable gate dielectric structure for nonvolatile memories.

Charge Trapping Sites in nc-RuO Embedded ZrHfO High-k Nonvolatile Memories

2010 ◽  
Vol 1250 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo
Keyword(s):  
Dielectric Film ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Mos Capacitor ◽  
Hole Trapping ◽  
Nonvolatile Memories ◽  
High K ◽  
Voltage Stress ◽  
Retention Characteristics ◽  
Trapping Sites

AbstractMaterials and electrical properties of the MOS capacitor containing nc-RuO embedded in the high-k ZrHfO dielectric film have been studied. The electron- and hole-trapping capacities and trapping sites in this kind of device were investigated using the constant voltage stress method, the frequency-dependent C-V measurement, and the retention characteristics. The negligible charge trapping phenomenon in the non-embedded device rules out the possibility of any trapping site in the bulk ZrHfO film or at the Si/ZrHfO interface. The electrical characterization result suggests that electrons are trapped in the bulk nc-RuO. However, holes have two possible trapping sites, i.e., in the bulk nc-RuO or at the nc-RuO/ZrHfO interface.

Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

2014 ◽  
Vol 778-780 ◽  
pp. 549-552 ◽  
Author(s):  
Jing Hua Xia ◽  
David M. Martin ◽  
Sethu Saveda Suvanam ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Deposition Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Layer Deposition ◽  
High K ◽  
Film Characteristics

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

2001 ◽  
Vol 670 ◽  
Author(s):  
Hyungsuk Jung ◽  
Hyundoek Yang ◽  
Kiju Im ◽  
Hyunsang Hwang
Keyword(s):  
Interfacial Layer ◽  
Silicon Oxide ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Tem Analysis ◽  
Mos Capacitors ◽  
Zirconium Silicate ◽  
Transmission Electron ◽  
High K ◽  
Device Applications

ABSTRACTThis letter describes a unique process for the preparation of high quality tantalum oxynitride (TaOxNy) with zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional native silicon oxide and oxynitride as an interfacial layer, tantalum oxynitride (TaOxNy) MOS capacitors using zirconium silicate (ZrSixOy) as an interfacial layer exhibit lower leakage current levels at the same equivalent oxide thickness. We were able to confirm TaOxNy/ZrSixOy stack structure by auger electron spectroscopy (AES) and transmission electron microscope (TEM) analysis. The estimated dielectric constant of TaOxNy and ZrSixOywere approximately 67 and 7, respectively. The zirconium silicate is a promising interfacial layer for future high-k gate dielectric applications.

Nonvolatile memory MOS capacitors made of CdSe embedded ZrHfO high-k gate dielectric

2013 ◽  
Vol 1562 ◽  
Author(s):  
Chi-Chou Lin ◽  
Yue Kuo
Keyword(s):  
Gate Voltage ◽  
Coulomb Blockade ◽  
Nonvolatile Memory ◽  
Gate Dielectric ◽  
Stress Test ◽  
Charge Trapping ◽  
Differential Resistance ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
High K

ABSTRACTMOS capacitor composed of nc-CdSe embedded ZrHfO high-k gate dielectric stack was fabricated and characterized for nonvolatile memory functions. Detailed material and electrical properties have been investigated. With a large charge trapping capability, this kind of device can trap electrons or holes depending on the polarity and magnitude of the applied gate voltage. For the same stress time, the device trapped more holes than electrons under the same magnitude of gate voltage but different polarity. The negative differential resistance peak was observed at the room temperature due to the Coulomb blockade effect. The charge trapping mechanism was delineated with the constant voltage stress test. After 10 years of storage, about 56% of trapped charges still remain in the device.

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

2015 ◽  
Vol 3 (39) ◽  
pp. 10293-10301 ◽  
Author(s):  
Chandreswar Mahata ◽  
Il-Kwon Oh ◽  
Chang Mo Yoon ◽  
Chang Wan Lee ◽  
Jungmok Seo ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Gate Dielectric ◽  
Dielectric Film ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Inp Substrate ◽  
High K ◽  
The Impact

Metal–oxide-semiconductor (MOS) capacitors with an amorphous Ta1−xZrxO composite gate dielectric film and a SiO2passivation layer were fabricated on an indium phosphide (InP) substrate.

Investigation of top gate electrode options for high-k gate dielectric MOS capacitors

2008 ◽  
Vol 5 (12) ◽  
pp. 3626-3629
Author(s):  
D. C. Moschou ◽  
E. Verrelli ◽  
D. N. Kouvatsos ◽  
P. Normand ◽  
D. Tsoukalas ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Gate Electrode ◽  
Mos Capacitors ◽  
High K ◽  
High K Gate Dielectric
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