Surface Passivation of Crystalline Silicon Wafer Using H2S Gas

We report the effects of H2S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H2S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 μs) of a c-Si wafer without any passivation treatments was also measured for comparison. The highest minority carrier lifetime gain of 2030% was observed at an annealing temperature of 600 °C. The X-ray photoelectron spectroscopy analysis revealed that S atoms were bonded to Si atoms after H2S annealing treatment. This indicates that the increase in minority carrier lifetime originating from the effect of sulfur passivation on the silicon wafer surface involves dangling bonds.

Contributions of Microbial “Contact Leaching” to Pyrite Oxidation under Different Controlled Redox Potentials

The function of microbial contact leaching to pyrite oxidation was investigated by analyzing the differences of residue morphologies, leaching rates, surface products, and microbial consortia under different conditions in this study. This was achieved by novel equipment that can control the redox potential of the solution and isolate pyrite from microbial contact oxidation. The morphology of residues showed that the corrosions were a little bit severer in the presence of attached microbes under 750 mV and 850 mV (vs. SHE). At 650 mV, the oxidation of pyrite was undetectable even in the presence of attached microbes. The pyrite dissolution rate was higher with attached microbes than that without attached microbes at 750 mV and 850 mV. The elemental sulfur on the surface of pyrite residues with sessile microorganisms was much less than that without attached microbes at 750 mV and 850 mV, showing that sessile acidophiles may accelerate pyrite leaching by reducing the elemental sulfur inhibition. Many more sulfur-oxidizers were found in the sessile microbial consortium which also supported the idea. The results suggest that the microbial “contact leaching” to pyrite oxidation is limited and relies on the elimination of elemental sulfur passivation by attached sulfur-oxidizing microbes rather than the contact oxidation by EPS-Fe.

Atomic Sulfur Passivation Improves the Photoelectrochemical Performance of ZnSe Nanorods

We introduced atomic sulfur passivation to tune the surface sites of heavy metal-free ZnSe nanorods, with a Zn2+-rich termination surface, which are initially capped with organic ligands and under-coordinated with Se. The S2− ions from a sodium sulfide solution were used to partially substitute a 3-mercaptopropionic acid ligand, and to combine with under-coordinated Zn termination atoms to form a ZnS monolayer on the ZnSe surface. This treatment removed the surface traps from the ZnSe nanorods, and passivated defects formed during the previous ligand exchange process, without sacrificing the efficient hole transfer. As a result, without using any co-catalysts, the atomic sulfur passivation increased the photocurrent density of TiO2/ZnSe photoanodes from 273 to 325 μA/cm2. Notably, without using any sacrificial agents, the photocurrent density for sulfur-passivated TiO2/ZnSe nanorod-based photoanodes remained at almost 100% of its initial value after 300 s of continuous operation, while for the post-deposited ZnS passivation layer, or those based on ZnSe/ZnS core–shell nanorods, it declined by 28% and 25%, respectively. This work highlights the advantages of the proper passivation of II-VI semiconductor nanocrystals as an efficient approach to tackle the efficient charge transfer and stability of photoelectrochemical cells based thereon.