A novel 3C-SiC on Si power Schottky diode design and modelling

2014 ◽  
Vol 1693 ◽  
Author(s):  
Fan Li ◽  
Yogesh K. Sharma ◽  
Craig A. Fisher ◽  
Michael R. Jennings ◽  
Philip A. Mawby
Keyword(s):  
Finite Element ◽  
Electric Vehicles ◽  
Schottky Diode ◽  
Physical Models ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Power Devices ◽  
Large Area ◽  
Free Standing ◽  
Economical Choice

ABSTRACTAlthough 3C-SiC has a narrower bandgap than 4H-SiC, it is the only SiC polytype that can be grown directly over large area silicon substrates. It has the potential to provide a more economical choice than 4H-SiC for intermediate power devices, such as inverters for electric vehicles. To fabricate a vertical device on 3C-SiC, the Si substrate is usually removed either by etching or polishing. Neither of these processes is economical nor efficient. In this paper we propose a lateral Schottky diode design for 3C-SiC on Si structure. 2D finite element simulations using ATLAS showed that a breakdown voltage beyond 1200 V can be achieved with a 4 μm thick epilayer. Physical models used for 3C-SiC/Si power devices simulations are introduced. Advantages of lateral 3C-SiC/Si diodes over free standing 3C-SiC are also discussed.

Schottky Diode Characteristics of CVD—Grown β —SiC Epitaxial Films on (n11) Silicon Substrates ( n= 1,3,4,5,6 ).

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshihisa Fujii ◽  
Atsuko Ogura ◽  
Katsuki Furukawa ◽  
Mitsuhiro Shigeta ◽  
Akira Suzuki ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Schottky Diodes ◽  
Epitaxial Films ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Leakage Currents ◽  
Substrate Orientation ◽  
Si Substrates ◽  
Barrier Heights ◽  
Sic Films

AbstractSchottky barrier contacts have been made on CVD—grown β - SiC on Si substrates, and their C—V and I—V characteristics are measured. Dependence of the Schottky characteristics on Si substrate orientation ((n11),(n=1,3,4,5,6), and (100)) is examined. The Schottky diodes of the β-SiC films on Si (611), Si(411), and Si (111) show excellent characteristics compared with the conventional Schottky diodes using Si(100) substrates. That is, reverse leakage currents are small, ideality factors are close to unity, and barrier heights are larger.

Influence of size variation on the strain distribution in YSZ membranes on Si substrates

2013 ◽  
Vol 1495 ◽  
Author(s):  
Florian Kuhl ◽  
Markus Piechotka ◽  
Daniel Reppin ◽  
Torsten Henning ◽  
Juergen Janek ◽  
...  
Keyword(s):  
Solid Oxide Fuel Cells ◽  
Electric Propulsion ◽  
Size Variation ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Stabilized Zirconia ◽  
Free Standing ◽  
Si Substrates ◽  
Radio Frequency Sputtering ◽  
Wet Chemical

ABSTRACTThe oxygen conductor yttria-stabilized-zirconia (YSZ) is widely used in miniaturized solid oxide fuel cells (µSOFC) and may be suitable for solid state ion emitter applications e.g. as miniaturized ion engines for electric propulsion. Since the YSZ films are not completely free of stress during the growth, cracks in fabricated free-standing membranes are often observed.YSZ thin films were deposited on silicon substrates by radio frequency sputtering. Free-standing YSZ membranes were fabricated by partially removing the Si substrate by anisotropic wet-chemical etching using different masking patterns defined by electron beam lithography. We show how different sizes and etching conditions influence the strain in the fabricated membranes. To characterize these membranes we used optical microscopy and scanning electron microscopy.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment

2009 ◽  
Vol 24 (12) ◽  
pp. 125008 ◽  
Author(s):  
Donagh O'Mahony ◽  
Walter Zimmerman ◽  
Sinje Steffen ◽  
Just Hilgarth ◽  
Pleun Maaskant ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Schottky Diode ◽  
Free Standing ◽  
Temperature Environment ◽  
High Temperature Environment

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

2010 ◽  
Vol 645-648 ◽  
pp. 865-868 ◽  
Author(s):  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Daniel Alquier ◽  
M. Italia ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Experimental Data ◽  
Theoretical Study ◽  
Stress Measurement ◽  
Bulk Material ◽  
Raman Shift ◽  
Silicon Substrates ◽  
Free Standing ◽  
Element Analysis ◽  
Micro Fabrication ◽  
Sic Films

The fabrication of SiC MEMS-based sensors requires new processes able to realize microstructures on either bulk material or on the SiC surface. The hetero-epitaxial growth of 3C-SiC on silicon substrates allows one to overcome the traditional limitations of SiC micro-fabrication. In this work a comparison between single crystal and poly crystal 3C-SiC micro-machined structures will be presented. The free-standing structures realized (cantilevers and membrane) are also a suitable method for residual field stress investigation in 3C-SiC films. Measurement of the Raman shift indicates that the mono and poly-crystal 3C-SiC structures release the stress in different ways. Finite element analysis was performed to determine the stress field inside the films and provided a good fit to the experimental data. A comprehensive experimental and theoretical study of 3C-SiC MEMS structures has been performed and is presented.

Perforation mechanics of UHMWPE soft ballistic sub-laminate and soft ballistic armor pack: A finite element study

2021 ◽  
pp. 089270572110420
Author(s):  
Bazle Z (Gama) Haque ◽  
John W Gillespie
Keyword(s):  
Finite Element ◽  
Single Layer ◽  
Areal Density ◽  
Element Model ◽  
Transverse Impact ◽  
Free Standing ◽  
Uhmwpe Fibers ◽  
Ballistic Limit Velocity ◽  
Definition Of ◽  
First Time

Soft-ballistic sub-laminate (SBSL) made from ultra-high molecular weight polyethylene (UHMWPE) fibers in [0/90] stacking sequence are the building block of a multi-layer soft-ballistic armor pack (SBAP, aka Soft Armor). A systematic study of the perforation dynamics of a single layer SBSL and several multi-layer SBAPs (2, 3, 4, 8, 16, 24, 32 layers) is presented for the first time in the literature. A previously validated finite element model of transverse impact on a single layer is used to study the perforation mechanics of multi-layer SBAPs with friction between individual layers. Following the classical definition of ballistic limit velocity, a minimum perforation velocity has been determined for free-standing single layer SBSL and multi-layer SBAPs. For the multi-layer SBAPs, complete perforations have been identified as progressive perforation of individual layers through the thickness. The minimum perforation velocities of multi-layer SBAPS is linear with the areal density for the eight (8) layer target and thicker. Large deformation behavior and perforation mechanics of the SBAPs is discussed in detail.

Longitudinal vibration analysis and suppression of electric wheel system driven by in-wheel motor considering unbalanced magnetic pull

2018 ◽  
Vol 233 (11) ◽  
pp. 2729-2745 ◽  
Author(s):  
Shuguang Zuo ◽  
Duoqiang Li ◽  
Yu Mao ◽  
Wenzhe Deng
Keyword(s):  
Neural Network ◽  
Finite Element ◽  
Dynamic Model ◽  
Electric Vehicles ◽  
Bp Neural Network ◽  
Longitudinal Vibration ◽  
Structural Parameters ◽  
Torque Ripple ◽  
Longitudinal Dynamics ◽  
Unbalanced Magnetic Pull

With the blowout of electric vehicles recently, the key parts of the electric vehicles driven by in-wheel motors named the electric wheel system become the core of development research. The torque ripple of the in-wheel motor mainly results in the longitudinal dynamics of the electric wheel system. The excitation sources are first analyzed through the finite element method, including the torque ripple induced by the in-wheel motor and the unbalanced magnetic pull produced by the relative motion between the stator and rotor. The accuracy of the finite element model is verified by the back electromotive force test of the in-wheel motor. Second, the longitudinal-torsional coupled dynamic model is established. The proposed model can take into account the unbalanced magnetic pull. Based on the model, the modal characteristics and the longitudinal dynamics of the electric wheel system are analyzed. The coupled dynamic model is verified by the vibration test of the electric wheel system. Two indexes, namely, the root mean square of longitudinal vibration of the stator and the signal-to-noise ratio of the tire slip rate, are proposed to evaluate the electric wheel longitudinal performance. The influence of unbalanced magnetic pull on the evaluation indexes of the longitudinal dynamics is analyzed. Finally, the influence of motor’s structural parameters on the average torque, torque ripple, and equivalent electromagnetic stiffness are analyzed through the orthogonal test. A surrogate model between the structural parameters of the in-wheel motor and the average torque, torque ripple, and equivalent electromagnetic stiffness is established based on the Bp neural network. The torque ripple and the equivalent electromagnetic stiffness are then reduced through optimizing the structural parameters of the in-wheel motor. It turns out that the proposed Bp neural network–based method is effective to suppress the longitudinal vibration of the electric wheel system.

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