Schottky Diode Characteristics of CVD—Grown β —SiC Epitaxial Films on (n11) Silicon Substrates ( n= 1,3,4,5,6 ).

1988 ◽  
Vol 116 ◽  
Author(s):  
Yoshihisa Fujii ◽  
Atsuko Ogura ◽  
Katsuki Furukawa ◽  
Mitsuhiro Shigeta ◽  
Akira Suzuki ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Schottky Diodes ◽  
Epitaxial Films ◽  
Silicon Substrates ◽  
Si Substrate ◽  
Leakage Currents ◽  
Substrate Orientation ◽  
Si Substrates ◽  
Barrier Heights ◽  
Sic Films

AbstractSchottky barrier contacts have been made on CVD—grown β - SiC on Si substrates, and their C—V and I—V characteristics are measured. Dependence of the Schottky characteristics on Si substrate orientation ((n11),(n=1,3,4,5,6), and (100)) is examined. The Schottky diodes of the β-SiC films on Si (611), Si(411), and Si (111) show excellent characteristics compared with the conventional Schottky diodes using Si(100) substrates. That is, reverse leakage currents are small, ideality factors are close to unity, and barrier heights are larger.

Epitaxial Thin Film Growth and Device Development in Monocrystalline Alpha and Beta Silicon Carbide

1989 ◽  
Vol 162 ◽  
Author(s):  
Robert F. Davis ◽  
J. W. Palmour ◽  
J. A. Edmond
Keyword(s):  
Film Growth ◽  
Schottky Diodes ◽  
Leakage Currents ◽  
Device Development ◽  
Barrier Heights ◽  
Inversion Domain ◽  
Commercial Applications ◽  
Inversion Domain Boundaries ◽  
And Inversion ◽  
Sic Films

ABSTRACTHigh purity monocrystalline β-SiC films have been chemically vapor deposited on Si (100) and α-SiC (0001) by numerous groups around the world using SiH4 and C3H8 or C2H4 carried in H2. Films grown on nominal Si (100) contain substantial concentrations of dislocations, stacking faults and inversion domain boundaries; those deposited on α-SiC (0001) contain primarily double positioning boundaries. Both types of boundaries may be eliminated by using off-axis orientations of the respective substrates. However, the films grown on off-axis a substrates were the a(6H) polytype. Schottky diode, p-n junction, MESFET, MOSFET and HBT devices have been fabricated with encouraging results for future commercial applications. The barrier heights and ideality factors of Au Schottky diodes on β-SiC ranged from 0.9—1.15 eV and 1.2—1.6, respectively. However, the reverse leakage currents were much lower and the breakdown voltages considerably higher at all temperatures for the diodes on the α-SiC films. MESFETs fabricated using the diodes in the alpha films were superior to those in beta with the transconductance being more than 15 times greater in the former. Enhancement-and depletion-mode MOSFETs exhibited better behavior in terms of saturation, drain voltage and high temperature operation. All films produced on a-SiC substrates were superior to those produced in beta films grown on Si.

scholarly journals O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2450
Author(s):  
Oumaima Abouzaid ◽  
Hussein Mehdi ◽  
Mickael Martin ◽  
Jérémy Moeyaert ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
Wafer Level ◽  
Si Substrate ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates.

Reduction in the Effective Barrier Height in Ptsi-P-Si Schottky Diodes by Using Low Energy Ion Implantation

1981 ◽  
Vol 10 ◽  
Author(s):  
C.-Y. Wei ◽  
W. Tantraporn ◽  
W. Katz ◽  
G. Smith
Keyword(s):  
Ion Implantation ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Low Energy ◽  
Si Substrate ◽  
Effective Barrier Height ◽  
Effective Barrier

A reduction in the effective barrier height in a PtSi-p-Si Schottky diode was achieved using low energy ion implantation to introduce a shallow p+ layer on a p-Si substrate. After the Schottky diode had been implanted with 3 keV 11B+ ions to a dose of 4 × 1012 ions cm−2, the barrier height was observed to decrease from 0.26 to 0.16eV. The reduction in barrier height correlated well with the boronconcentration found at or near the PtSi-Si interface.

scholarly journals 3C-SiC Films on Si for MEMS Applications: Mechanical Properties

2009 ◽  
Vol 615-617 ◽  
pp. 633-636 ◽  
Author(s):  
Christopher Locke ◽  
G. Kravchenko ◽  
P. Waters ◽  
J. D. Reddy ◽  
K. Du ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Small Degree ◽  
Film Stress ◽  
Si Substrate ◽  
Plastic Properties ◽  
Si Substrates ◽  
High Residual Stress ◽  
Mems Cantilevers ◽  
Sic Films

Single crystal 3C-SiC films were grown on (100) and (111) Si substrate orientations in order to study the resulting mechanical properties of this material. In addition, poly-crystalline 3C-SiC was also grown on (100)Si so that a comparison with monocrystaline 3C-SiC, also grown on (100)Si, could be made. The mechanical properties of single crystal and polycrystalline 3C-SiC films grown on Si substrates were measured by means of nanoindentation using a Berkovich diamond tip. These results indicate that polycrystalline SiC thin films are attractive for MEMS applications when compared with the single crystal 3C-SiC, which is promising since growing single crystal 3C-SiC films is more challenging. MEMS cantilevers and membranes fabricated from a 2 µm thick single crystal 3C-SiC grown on (100)Si under similar conditions resulted in a small degree of bow with only 9 µm of deflection for a cantilever of 700 µm length with an estimated tensile film stress of 300 MPa. Single crystal 3C-SiC films on (111)Si substrates have the highest elastic and plastic properties, although due to high residual stress they tend to crack and delaminate.

BARRIER HEIGHT ENHANCED GaN SCHOTTKY DIODES USING A THIN AlN SURFACE LAYER

2008 ◽  
Vol 22 (29) ◽  
pp. 5167-5173 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
F. K. YAM ◽  
C. W. CHIN ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Barrier Height ◽  
Schottky Diode ◽  
Dark Current ◽  
Lattice Mismatch ◽  
Schottky Diodes ◽  
Wide Band ◽  
Hexagonal Wurtzite Structure ◽  
Full Characterization ◽  
Si Substrates

Gallium nitride (GaN) is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Thin films of GaN are most commonly grown in the hexagonal wurtzite structure on sapphire substrates. Growth of GaN onto silicon substrates offers a very attractive opportunity to incorporate GaN devices onto silicon-based integrated circuits. Although direct epitaxial growth of GaN films on Si substrates is a difficult task (mainly due to the 17% lattice mismatch present), substantial progress in the crystal quality can be achieved using a buffer layer. A full characterization of the quality of the material needs to be assessed by a combination of different techniques. In this work, a thin AlN cap layer of 50 nm was incorporated in GaN Schottky diode to enhance the effective Schottky barrier height and reduces the dark current. A barrier height of 0.52 eV for normal GaN Schottky diode was increased to the effective barrier height of 0.63 eV. The resulting Schottky diodes show a dark current of as low as 6.3×10-5 A at 5 V bias, which is about two orders of magnitude lower than that of normal GaN (5.2×10-3 A at 5 V bias) Schottky diode.

PECVD Silicon Carbide as a Thin Film Packaging Material for Microfabricated Neural Electrodes

2007 ◽  
Vol 1009 ◽  
Author(s):  
Allison Hess ◽  
Rocco Parro ◽  
Jiangang Du ◽  
Jeremy Dunning ◽  
Maximillian Scardelletti ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Chemical Vapor ◽  
Leakage Currents ◽  
Si Substrates ◽  
Thin Film Coatings ◽  
Flat Interface ◽  
Neural Electrodes ◽  
Moisture Barriers ◽  
Sic Films

AbstractThis paper reports our effort to develop amorphous silicon carbide (a-SiC) films for use as hermetic thin film coatings for mechanically-flexible neural electrodes. In our work, the a-SiC films were deposited by plasma enhanced chemical vapor deposition (PECVD) using two distinct methods, namely a single precursor approach using trimethylsilane, and a dual precursor approach using methane (CH4) and silane (SiH4). The mechanical properties of films deposited on Si substrates were characterized using the wafer curvature and load-deflection methods. The effectiveness of the films as moisture barriers for polyimide substrates was characterized by measuring the leakage currents of SiC-coated interdigitated electrode structures soaked in PBS. A microfabricated prototype of the flat interface nerve electrode (FINE) based on a flexible polyimide substrate and a PECVD SiC capping layer was fabricated using a monolithic process based on conventional micromachining techniques. To facilitate this approach, a reactive ion etching process was developed that exhibited high etch rates and high selectively to the SiC films.

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

2007 ◽  
Vol 556-557 ◽  
pp. 1003-1006
Author(s):  
Pierre Brosselard ◽  
Dominique Tournier ◽  
Miquel Vellvehi ◽  
Josep Montserrat ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Contact Region ◽  
Metal Layer ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
Process Technology ◽  
Leakage Currents ◽  
Low Leakage ◽  
Surge Current

In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process technology is compatible with that of vertical power SiC JFETs. Three novel diode designs are proposed and we report their electrical characteristics. The P+ buried layer implant of the JFET is used for the PiN anode formation and for the P+ islands of the JBS. The Schottky diode differs from a standard Schottky diode since buried rings below the Schottky contact region have been included and the anode metal layer also contacts the buried P+ region at the diode periphery. With this last approach, the resulting Schottky diodes show low leakage currents and surge current capability, with a lower on-state voltage than the JBS.

Production of GexSi1−x, and SiC Films on Si Substrates Using Particle-Beam Technologies

1992 ◽  
Vol 281 ◽  
Author(s):  
V. A. Kagadey ◽  
O. B. Ladizhensky ◽  
N. I. Lebedeva ◽  
E. N. Matin ◽  
D. I. Proskurovsky ◽  
...  
Keyword(s):  
Electron Beam ◽  
Point Defects ◽  
Particle Beam ◽  
High Dose ◽  
Si Substrate ◽  
Enhanced Diffusion ◽  
Si Substrates ◽  
Prolonged Annealing ◽  
Sic Films ◽  
High Dose Implantation

ABSTRACTThe paper presents the results of preliminary experiments on the production of GexSi1−x/Si structures using deposition of a thin Ge film on a Si substrate, implantation of Si ions and rapid electron-beam annealing. The conditions under which monocrystalline layers form have been found. It is supposed that the large depth of Ge penetration into Si is due to enhanced diffusion of Ge conditioned by the high density of point defects in the doped Si. It has been established that high-dose implantation of C ions into Si and subsequent electron beam annealing result in the formation of a monocrystalline layer of the SiC phase in the case of pulsed (∼0.7 μs) heating and liquid-phase recrystallisation and a polycrystalline SiC layer in the case of prolonged annealing.

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor

2009 ◽  
Vol 609 ◽  
pp. 195-199
Author(s):  
A. Keffous ◽  
M. Kechouane ◽  
Tahar Kerdja ◽  
Y. Belkacem ◽  
K. Bourenane ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Gas Sensing ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Electrical Parameters ◽  
Porous Sic ◽  
Sic Films

In this paper we present the study of a Schottky diode gas sensing by using porous SiC films with palladium as a catalytic metal. The Schottky diodes were used for the first time for hydrocarbon (C2H6) gas sensing. The properties of the porous SiC films formed by electrochemical method were investigated by scanning electron microscopy (SEM). The electrical measurements were made at room temperature (295 K) in different ambient. The effect of the porous surface structure was investigated by evaluating electrical parameters such as the ideality factor (n), barrier height (Bp) and series resistance (Rs). The porous layer significantly affects the electrical properties of the Schottky diodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I–V characteristics was found to be dependent on the SiC thickness. For a thinner SiC layer (0.16 µm), the electrical parameters n was found around 1.135, 0.7041 eV for a barrier height and 45  for a series resistance, but for a thicker one (1.6 µm) n, Bp and Rs were 1.368, 0.7756 eV and 130 , respectively. The low value of the series resistance obtained using Cheung’s method clearly indicated the high performance of the Schottky diode for thinner SiC layer. This effect showed the uniformity of the SiC layer. Finally, sensitivity around 66 % and selectivity of the sensors were reached by using the PSC layer at low voltages below 0.5 Volt.

Growth of A β-SiC Filli on a Si Substrate by a Direct Carbonization Method

1991 ◽  
Vol 220 ◽  
Author(s):  
Yasuaki Hirano ◽  
Taroh Inada
Keyword(s):  
Activation Energy ◽  
Single Crystal ◽  
Crystallization Process ◽  
Thermal Reaction ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Film Properties ◽  
X Ray ◽  
Si Substrates ◽  
Sic Films

Single crystal β-SiC films have been fabricated on (100)Si substrates through a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The substrate temperature during the deposition ranged from 600 to 1100°C. The film properties were analyzed by RHEED and x-ray diffraction measurements. RBS measurements and TEM observations have also been made to investigate the film properties. The single crystal β-SiC films grow at and above 1000°C on (100) substrates. The activation energy is found to be around 1.1 eV for the crystallization process.

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