Field Dependent Electrical Conduction in Metal-Insulator-Metal Devices using Alumina-Silicone Nanolaminate Dielectrics

2013 ◽  
Vol 1547 ◽  
pp. 95-102
Author(s):  
Santosh K. Sahoo ◽  
Rakhi P. Patel ◽  
Colin A. Wolden
Keyword(s):  
Leakage Current ◽  
Chemical Vapor ◽  
Energy Band Diagram ◽  
Level Energy ◽  
Trap Level ◽  
Field Region ◽  
Ohmic Conduction ◽  
Conduction Mechanisms ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTHybrid alumina-silicone nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over nanolaminate construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics for application such as capacitors in thin film transistors and memory devices. In this work, we present the temperature dependent current versus voltage (I-V) measurements of the nanolaminate dielectrics in the range of 200- 310 K to better asses their potential in these applications. Various models are used to know the different conduction mechanisms contributing to the leakage current in these nanolaminate films. It is observed that space charge limited current (SCLC) mechanism is the dominant conduction process in the high field region whereas Ohmic conduction process is contributing to the leakage current in the low field region. The shallow electron trap level energy (Et) of 0.16 eV is responsible for SCLC mechanism whereas for Ohmic conduction process the activation energy (Ea) for electrons is about 0.22 eV. An energy band diagram is given to explain the dominance of various conduction mechanisms in different field regions in these nanolaminate films.

Field Dependent Carrier Transport Mechanisms in Metal-Insulator–Metal Devices with Ba0.8Sr0.2TiO3/ ZrO2 Heterostructured Thin Films as the Dielectric

2013 ◽  
Vol 1547 ◽  
pp. 53-60
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Colin A. Wolden ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Leakage Current ◽  
Electron Trap ◽  
Field Region ◽  
Ohmic Conduction ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTBa0.8Sr0.2TiO3/ZrO2 heterostructured thin films with different individual layer ZrO2 thicknesses are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of the above multilayered thin films in metal-insulator-metal (MIM) device structures are taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different conduction mechanisms responsible for the leakage current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with deep electron trap energy levels (φt) whereas space charge limited current (SCLC) mechanism is contributing to the leakage current in the medium field region with shallow electron trap levels (Et). Also, it is seen that Ohmic conduction process is the dominant mechanism in the low field region having activation energy (Ea) for the electrons. The estimated trap level energy varies from 0.2 to 1.31 eV for deep level traps and from 0.08 to 0.18 eV for shallow level traps whereas the activation energy for electrons in ohmic conduction process varies from 0.05 to 0.17 eV with the increase of ZrO2 sub layer thickness. An energy band diagram is given to explain the dominance of the various leakage mechanisms in different field regions for these heterostructured thin films.

Carrier Transport Mechanisms in Metal-Insulator–Metal Au/Ba0.8Sr0.2TiO3/ ZrO2/ Ba0.8Sr0.2TiO3/Pt Thin Film Heterostructures

2013 ◽  
Vol 1507 ◽  
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Colin A. Wolden ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Leakage Current ◽  
Sol Gel ◽  
Level Energy ◽  
Trap Level ◽  
Ohmic Conduction ◽  
Metal Insulator ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTBa0.8Sr0.2TiO3/ZrO2 heterostructured thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of metal-insulator-metal (MIM) devices using the above multilayered thin film as the dielectric have been taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different leakage mechanisms contributing to the conduction current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with a deep trap level energy (φt) of 1.31 eV whereas space charge limited current (SCLC) mechanism and Ohmic conduction process are contributing to the leakage current in the medium and low field regions respectively. The estimated shallow trap level (Et) for SCLC mechanism is 0.26 eV whereas the activation energy (Ea) for the electrons in the Ohmic conduction process is about 0.07 eV. An energy band diagram is given to explain the various leakage mechanisms in different field regions for these heterostructured thin films.

Interfacial Layer Growth Condition Dependent Electrical Conduction in HfO2/SiO2 Heterostructured thin films

2012 ◽  
Vol 1397 ◽  
Author(s):  
Santosh K. Sahoo ◽  
D. Misra
Keyword(s):  
Energy Level ◽  
Leakage Current ◽  
Electrical Conduction ◽  
Interfacial Layer ◽  
Conduction Mechanism ◽  
Growth Conditions ◽  
Layer Growth ◽  
Field Region ◽  
Ohmic Conduction ◽  
Trap Energy

ABSTRACTThe electrical conduction mechanism contributing to the leakage current at different field regions has been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO2/P-Si nMOS capacitor has been taken for two different interfacial layer (SiO2) growth conditions such as in situ steam grown (ISSG) and chemical processes. It is observed that Poole-Frenkel mechanism is the dominant conduction mechanism in high field region whereas Ohmic conduction is dominant in the low field region. Also it is seen that the gate leakage current is reduced for the devices having chemically grown interfacial layer compared to that of ISSG devices. Both trap energy level (ϕt) and activation energy (Ea) increase in the chemically grown interfacial layer devices for the Poole-Frenkel and Ohmic conduction mechanisms respectively in comparison to ISSG devices. Trap energy level (ϕt) of ~ 0.2 eV, obtained from Poole-Frenkel mechanism indicates that the doubly ionized oxygen vacancies (V2-) are the active defects and are contributing to the leakage current in these devices.

scholarly journals Blue Electroluminescence in SRO-HFCVD Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 943
Author(s):  
Haydee P. Martínez ◽  
José A. Luna ◽  
Roberto Morales ◽  
José F. Casco ◽  
José A. D. Hernández ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Carrier Transport ◽  
Light Emission ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Hot Filament ◽  
Quartz Substrates

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

Changes in structures and electrical conduction mechanisms of chemical vapor deposited Ta2O5 thin films by annealing under O3 atmosphere with ultraviolet light radiation

2004 ◽  
Vol 19 (5) ◽  
pp. 1516-1523 ◽  
Author(s):  
Dail Eom ◽  
In Sang Jeon ◽  
Sang Yong No ◽  
Cheol Seong Hwang ◽  
Hyeong Joon Kim
Keyword(s):  
Ultraviolet Light ◽  
Electrical Conduction ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Trap Level ◽  
Light Radiation ◽  
Conduction Mechanisms ◽  
Conduction Behavior ◽  
Electrical Conduction Mechanisms ◽  
Voltage Region

The electrical conduction mechanisms of approximately 8-nm-thick Ta2O5 films grown by metalorganic chemical vapor deposition were investigated by measuring the current density–voltage characteristics at various temperatures. The Ta2O5 films were grown in two steps with or without intermittent annealing at 450 °C under an O3 atmosphere with ultraviolet light radiation (UV-O3 treatment). High-resolution transmission electron microscopy of the films after post-deposition annealing at 750 °C under an O2 atmosphere showed that the intermittent UV-O3 treatment improved the crystallization of the film during post-annealing. Auger electron spectroscopy of the variously treated samples showed that the improvement in crystallization was due to the increase in the oxygen concentration of the Ta2O5 films by the UV-O3 treatment. The Ta2O5 film without the UV-O3 treatment mostly exhibited a Poole–Frenkel conduction behavior with the electron trap level of 0.62 eV from the conduction band edge. The whole layer UV-O3 treated Ta2O5 films also showed a Poole–Frenkel conduction behavior with an almost identical electron trap level and a reduced density. The partially UV-O3 treated Ta2O5 films exhibited a direct tunneling behavior in a relatively low voltage region by the tunneling through the thin (∼3.8 nm) UV-O3 treated surface layer. However, these films showed a Poole–Frenkel conduction behavior in the high-voltage region. In general, the UV-O3 treatment was an efficient method to reduce the leakage current of the high-dielectric Ta2O5 films.

ZrO2 Layer Thickness and Field Dependent Leakage Current in Ba0.8Sr0.2TiO3/ZrO2 Heterostructured Thin Films

2012 ◽  
Vol 1454 ◽  
pp. 97-102
Author(s):  
Santosh K. Sahoo ◽  
Manjulata Sahoo ◽  
Banshidhar Majhi
Keyword(s):  
Thin Films ◽  
Layer Thickness ◽  
Leakage Current ◽  
Sol Gel ◽  
Energy Band Diagram ◽  
Field Region ◽  
Dissipation Energy ◽  
Si Substrates ◽  
Low Field ◽  
Low Dissipation

AbstractHeterostructured Ba0.8Sr0.2TiO3/ZrO2/Ba0.8Sr0.2TiO3 thin films are fabricated on the platinized Si substrates by a sol-gel process. The current versus voltage measurements are taken on these films by varying the thickness of ZrO2 layer. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in leakage current which is very essential for the low dissipation energy and hence faster operation of memory devices. It is observed that the leakage current further decreases as the ZrO2layer thickness increases. Also it is seen that different conduction mechanisms are contributing to the leakage current in the different field regions. Poole-Frenkel (PF), space charge limited current (SCLC), and Ohmic mechanisms are the dominating conduction processes in high, medium, and low field regions respectively. An energy band diagram is given to explain the Ohmic conduction in the low field region and the Poole-Frenkel conduction mechanism in the high field region for these devices.

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

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