Interfacial Layer Growth Condition Dependent Electrical Conduction in HfO2/SiO2 Heterostructured thin films

2012 ◽  
Vol 1397 ◽  
Author(s):  
Santosh K. Sahoo ◽  
D. Misra
Keyword(s):  
Energy Level ◽  
Leakage Current ◽  
Electrical Conduction ◽  
Interfacial Layer ◽  
Conduction Mechanism ◽  
Growth Conditions ◽  
Layer Growth ◽  
Field Region ◽  
Ohmic Conduction ◽  
Trap Energy

ABSTRACTThe electrical conduction mechanism contributing to the leakage current at different field regions has been studied in this work. The current-voltage (I-V) measurement of TiN/HfO2/SiO2/P-Si nMOS capacitor has been taken for two different interfacial layer (SiO2) growth conditions such as in situ steam grown (ISSG) and chemical processes. It is observed that Poole-Frenkel mechanism is the dominant conduction mechanism in high field region whereas Ohmic conduction is dominant in the low field region. Also it is seen that the gate leakage current is reduced for the devices having chemically grown interfacial layer compared to that of ISSG devices. Both trap energy level (ϕt) and activation energy (Ea) increase in the chemically grown interfacial layer devices for the Poole-Frenkel and Ohmic conduction mechanisms respectively in comparison to ISSG devices. Trap energy level (ϕt) of ~ 0.2 eV, obtained from Poole-Frenkel mechanism indicates that the doubly ionized oxygen vacancies (V2-) are the active defects and are contributing to the leakage current in these devices.

LEAKAGE CURRENT CONDUCTION BEHAVIOR OF FLUORINATED POLYIMIDE FILM

2006 ◽  
Vol 20 (06) ◽  
pp. 315-320
Author(s):  
YONG K. LEE
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Transport Mechanism ◽  
Conduction Mechanism ◽  
Polyimide Film ◽  
Charge Transport Mechanism ◽  
Ohmic Conduction ◽  
Fluorinated Polyimide ◽  
Current Conduction ◽  
Conduction Behavior

Leakage current of fluorinated polyimide film was measured as function of time, electric field and sample temperature. Several existing conduction and charge transport mechanism was fit to the experimental results. It was concluded that the bulk limited Pool–Frenkel conduction mechanism was likely to dominate for the leakage current at high electric field (higher than 1 MV/cm) and Ohmic conduction was main conduction mechanism at low electric field (lower than 1 MV/cm).

Field Dependent Electrical Conduction in Metal-Insulator-Metal Devices using Alumina-Silicone Nanolaminate Dielectrics

2013 ◽  
Vol 1547 ◽  
pp. 95-102
Author(s):  
Santosh K. Sahoo ◽  
Rakhi P. Patel ◽  
Colin A. Wolden
Keyword(s):  
Leakage Current ◽  
Chemical Vapor ◽  
Energy Band Diagram ◽  
Level Energy ◽  
Trap Level ◽  
Field Region ◽  
Ohmic Conduction ◽  
Conduction Mechanisms ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTHybrid alumina-silicone nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over nanolaminate construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics for application such as capacitors in thin film transistors and memory devices. In this work, we present the temperature dependent current versus voltage (I-V) measurements of the nanolaminate dielectrics in the range of 200- 310 K to better asses their potential in these applications. Various models are used to know the different conduction mechanisms contributing to the leakage current in these nanolaminate films. It is observed that space charge limited current (SCLC) mechanism is the dominant conduction process in the high field region whereas Ohmic conduction process is contributing to the leakage current in the low field region. The shallow electron trap level energy (Et) of 0.16 eV is responsible for SCLC mechanism whereas for Ohmic conduction process the activation energy (Ea) for electrons is about 0.22 eV. An energy band diagram is given to explain the dominance of various conduction mechanisms in different field regions in these nanolaminate films.

Equivalent Trap Energy Level Extraction for SiGe Using Gate-Induced-Drain-Leakage Current Analysis

2014 ◽  
Vol 31 (10) ◽  
pp. 106103
Author(s):  
Chang Liu ◽  
Wen-Jie Yu ◽  
Bo Zhang ◽  
Zhong-Ying Xue ◽  
Wang-Ran Wu ◽  
...  
Keyword(s):  
Energy Level ◽  
Leakage Current ◽  
Current Analysis ◽  
Trap Energy

Field Dependent Carrier Transport Mechanisms in Metal-Insulator–Metal Devices with Ba0.8Sr0.2TiO3/ ZrO2 Heterostructured Thin Films as the Dielectric

2013 ◽  
Vol 1547 ◽  
pp. 53-60
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Colin A. Wolden ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Leakage Current ◽  
Electron Trap ◽  
Field Region ◽  
Ohmic Conduction ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Conduction Process ◽  
Metal Insulator Metal

ABSTRACTBa0.8Sr0.2TiO3/ZrO2 heterostructured thin films with different individual layer ZrO2 thicknesses are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel process. The current versus voltage (I-V) measurements of the above multilayered thin films in metal-insulator-metal (MIM) device structures are taken in the temperature range of 310 to 410K. The electrical conduction mechanisms contributing to the leakage current at different field regions have been studied in this work. Various models are used to know the different conduction mechanisms responsible for the leakage current in these devices. It is observed that Poole-Frenkel mechanism is the dominant conduction process in the high field region with deep electron trap energy levels (φt) whereas space charge limited current (SCLC) mechanism is contributing to the leakage current in the medium field region with shallow electron trap levels (Et). Also, it is seen that Ohmic conduction process is the dominant mechanism in the low field region having activation energy (Ea) for the electrons. The estimated trap level energy varies from 0.2 to 1.31 eV for deep level traps and from 0.08 to 0.18 eV for shallow level traps whereas the activation energy for electrons in ohmic conduction process varies from 0.05 to 0.17 eV with the increase of ZrO2 sub layer thickness. An energy band diagram is given to explain the dominance of the various leakage mechanisms in different field regions for these heterostructured thin films.

Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure

2008 ◽  
Vol 600-603 ◽  
pp. 759-762
Author(s):  
Rajat Mahapatra ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright
Keyword(s):  
Carrier Transport ◽  
Conduction Mechanism ◽  
Low Voltage ◽  
Schottky Emission ◽  
Mis Structure ◽  
Field Region ◽  
Transport Mechanisms ◽  
Trap Energy ◽  
Transport Behaviour ◽  
Voltage Region

In this study we report interface and carrier transport behaviour in Al/HfO2/SiO2/SiC MIS structure. The density of the interface states (Dit) and the oxide trapped charges (Not) are found to be ~7 x 1011 eV-1cm-2 @ Ec-Et = 0.2 eV, and ~ 4.8 x 1011 cm-2. The temperature dependencies on gate current density are explored to study the different charge transport mechanisms through the HfO2-based dielectric stack on 4H-SiC. In the low voltage region, the conduction mechanism is controlled by a space charge limited or electronic hopping conduction process. Beyond this region (1.25 MV/cm <E <2.45MV/cm), leakage current consists of combination of Pool-Frenkel (PF) and Schottky emission The trap energy level is found to be ~0.6 eV. In the higher field region (> 2.5 MV/cm), and at higher temperatures Schottky emission (SE) fits the data very well. The barrier height is found to be ~1.5 eV, which is higher than the value for just HfO2 on SiC

Changes in the Electrical Conduction Mechanism with the Electrical Degradation of BaTiO3-Based Ceramics

2008 ◽  
Vol 388 ◽  
pp. 201-204 ◽  
Author(s):  
Makito Nakano ◽  
Akira Saito ◽  
Nobuyuki Wada
Keyword(s):  
Leakage Current ◽  
Electric Fields ◽  
Electrical Conduction ◽  
Conduction Mechanism ◽  
Total Current ◽  
Degradation Mechanisms ◽  
Dielectric Layers ◽  
Electrical Degradation ◽  
Frenkel Emission ◽  
High Electric Fields

The electrical degradation mechanisms of BaTiO3-based ceramics were investigated by measuring the dependence of leakage current on high electric fields. Before the degradation, the leakage current predominately obeyed Ohm’s law and Poole-Frenkel relation. As the degradation progressed, the Poole-Frenkel emission current increased. Moreover, the total current at the high electric fields also comprised Schottky emissions between cathodes and dielectric layers.

Study on the effects of the Si capping layer growth conditions on the leakage current of Ge photodetector

2017 ◽  
Vol 56 (10) ◽  
pp. 102201 ◽  
Author(s):  
Shigekazu Okumura ◽  
Keizo Kinoshita ◽  
Junichi Fujikata ◽  
Takasi Simoyama ◽  
Hideki Ono ◽  
...  
Keyword(s):  
Leakage Current ◽  
Growth Conditions ◽  
Layer Growth ◽  
Capping Layer

ELECTRICAL CONDUCTION PHENOMENA IN POLYIMIDE FILMS

1994 ◽  
Vol 08 (25) ◽  
pp. 1591-1595
Author(s):  
M.H. CHOHAN ◽  
H. MAHMOOD ◽  
FARHANA SHAH
Keyword(s):  
Activation Energy ◽  
Electrical Conduction ◽  
High Field ◽  
Conduction Mechanism ◽  
Field Region ◽  
Polyimide Films ◽  
Voltage Range ◽  
Electrical Conduction Mechanism ◽  
Low Field ◽  
Type Process

A study of the electrical conduction mechanism in polyimide (Kapton) films has been made. The measurements were carried out on films of 12.5 and 25 µm thick in the voltage range of 100 to 3000 V and in the temperature range of 300 to 373 K. The conduction mechanism in the low field region is a hopping type process while the high field phenomenon is a Poole-Frenkel behavior. The activation energy is about 1.1 eV at 100 V and 0.8 eV at 3000 V.

Nitrogen (N2) Implantation to Suppress Growth of Interfacial Oxide in Mocvd Bst and Sputtered Bst Films

1999 ◽  
Vol 567 ◽  
Author(s):  
Renee Nieh ◽  
Wen-Jie Qi ◽  
Yongjoo Jeon ◽  
Byoung Hun Lee ◽  
Aaron Lucas ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Future Generation ◽  
Oxide Thickness ◽  
Layer Growth ◽  
X Ray ◽  
Bst Films

ABSTRACTBa0.5Sr0.5TiO3 (BST) is one of the high-k candidates for replacing SiO2 as the gate dielectric in future generation devices. The biggest obstacle to scaling the equivalent oxide thickness (EOT) of BST is an interfacial layer, SixOy, which forms between BST and Si. Nitrogen (N2) implantation into the Si substrate has been proposed to reduce the growth of this interfacial layer. In this study, capacitors (Pt/BST/Si) were fabricated by depositing thin BST films (50Å) onto N2 implanted Si in order to evaluate the effects of implant dose and annealing conditions on EOT. It was found that N2 implantation reduced the EOT of RF magnetron sputtered and Metal Oxide Chemical Vapor Deposition (MOCVD) BST films by ∼20% and ∼33%, respectively. For sputtered BST, an implant dose of 1×1014cm−;2 provided sufficient nitrogen concentration without residual implant damage after annealing. X-ray photoelectron spectroscopy data confirmed that the reduction in EOT is due to a reduction in the interfacial layer growth. X-ray diffraction spectra revealed typical polycrystalline structure with (111) and (200) preferential orientations for both films. Leakage for these 50Å BST films is on the order of 10−8 to 10−5 A/cm2—lower than oxynitrides with comparable EOTs.

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