Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O

1996 ◽  
Vol 17 (7) ◽  
pp. 355-357 ◽  
Author(s):  
S.C. Sun ◽  
T.F. Chen
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Current Reduction

Rapid thermal annealing effects on the properties of plasma‐enhanced chemical vapor deposited tungsten films

1991 ◽  
Vol 70 (4) ◽  
pp. 2366-2369 ◽  
Author(s):  
Jong‐Sung Hong ◽  
Yong Tae Kim ◽  
Suk‐Ki Min ◽  
Tae Won Kang ◽  
Chi Yhou Hong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Annealing Effects

A Study on the Mechanism for the Influence of High Density of Defect Movement on the Leakage Current of PN Junction

1990 ◽  
Vol 184 ◽  
Author(s):  
Zhang Tonghe ◽  
Zhou Shenghui ◽  
Wu Yuguang ◽  
Luo Yan
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Defect Density ◽  
Defect Distribution ◽  
High Defect Density ◽  
Pn Junction ◽  
Short Annealing ◽  
Current Reduction

ABSTRACTThe results in the paper show that high defect density appears during rapid thermal annealing. The spreading of the defect distribution increases with increasing of the annealing time. So the leakage current increases up. It is found that the PN junction leakage current for short annealing time(5s) and for hot implantation are obviously lower than that of RT implantation. The mechanism of the leakage current reduction is discussed.

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