scholarly journals Blue Electroluminescence in SRO-HFCVD Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 943
Author(s):  
Haydee P. Martínez ◽  
José A. Luna ◽  
Roberto Morales ◽  
José F. Casco ◽  
José A. D. Hernández ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Carrier Transport ◽  
Light Emission ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Conduction Mechanisms ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Hot Filament ◽  
Quartz Substrates

In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

Rectifying Behavior and Light Emission from Nickel Oxide MIS Structures

MRS Advances ◽  
2016 ◽  
Vol 1 (49) ◽  
pp. 3341-3347 ◽  
Author(s):  
Kamruzzaman Khan ◽  
Srikanth Itapu ◽  
Daniel G. Georgiev
Keyword(s):  
Carrier Transport ◽  
Reverse Bias ◽  
Light Emission ◽  
Mis Structure ◽  
Metal Insulator ◽  
Turn On ◽  
Current Voltage ◽  
Critical Turn ◽  
Mis Devices ◽  
Mis Structures

ABSTRACTWe have demonstrated the NiO/ZnO based rectifying diode for LED application for substituting GaN for optoelectronics applications. We have systematically studied the current-voltage (I-V) characteristics of NiO based Metal-Insulator-Semiconductor (MIS) devices under forward and reverse bias for its use in LED applications. The results obtained show that the current increases exponentially with the voltage after a critical turn-on-voltage. The mechanism of carrier transport responsible for the rectifying behavior of the MIS structure as well as the light emission is discussed in relation to the experimental results.

scholarly journals CVD-Grown Monolayer Graphene-Based Geometric Diode for THz Rectennas

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1986
Author(s):  
Heng Wang ◽  
Gaurav Jayaswal ◽  
Geetanjali Deokar ◽  
John Stearns ◽  
Pedro M. F. J. Costa ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Zero Bias ◽  
Metal Insulator ◽  
Particle In Cell ◽  
Neck Width ◽  
Exfoliated Graphene ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics

For THz rectennas, ultra-fast diodes are required. While the metal–insulator–metal (MIM) diode has been investigated in recent years, it suffers from large resistance and capacitance, as well as a low cut-off frequency. Alternatively, a geometric diode can be used, which is more suitable due to its planar structure. However, there is only one report of a THz geometric diode based on a monolayer graphene. It is based on exfoliated graphene, and thus, it is not suitable for mass production. In this work, we demonstrate chemical vapor deposition (CVD)-grown monolayer graphene based geometric diodes, which are mass-producible. The diode’s performance has been studied experimentally by varying the neck widths from 250–50 nm, the latter being the smallest reported neck width for a graphene geometric diode. It was observed that by decreasing the neck widths, the diode parameters such as asymmetry, nonlinearity, zero-bias resistance, and responsivity increased within the range studied. For the 50 nm neck width diode, the asymmetry ratio was 1.40 for an applied voltage ranging from −2 V to 2 V, and the zero-bias responsivity was 0.0628 A/W. The performance of the diode was also verified through particle-in-cell Monte Carlo simulations, which showed that the simulated current-voltage characteristics were consistent with our experimental results.

Test of A Diamond-Tungsten Sampling Calorimeter

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Stone ◽  
M. Franklin ◽  
D. Fujino ◽  
K. K. Gan ◽  
R. Gilman ◽  
...  
Keyword(s):  
Incident Energy ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Metal Structure ◽  
High Rate ◽  
Harsh Environments ◽  
Particle Detector ◽  
High Radiation ◽  
Metal Insulator ◽  
Metal Insulator Metal

ABSTRACTDiamond is suitable for use as an ionizing particle detector for high rate, high radiation, and/or chemically harsh environments. A sampling calorimeter, a detector measuring the total energy of an incident particle, consisting of 20 alternating layers of diamond and tungsten has been constructed and tested. The diamond for the detector layers was grown by chemical vapor deposition with an averaged thickness of 500 μm. The active area of each layer was 3×3 cm2 with ohmic contacts on opposite faces forming a metal-insulator-metal structure. The calorimeter was tested with electrons of energies up to 5.0 GeV. The response of the diamond/tungsten calorimeter was found to be linear as a function of incident energy. A direct comparison of diamond/tungsten and silicon/tungsten calorimeters was made.

Light emission from metal‐insulator‐metal structures

1993 ◽  
Vol 73 (1) ◽  
pp. 384-393 ◽  
Author(s):  
P. Canet ◽  
C. Laurent ◽  
J. Akinnifesi ◽  
B. Despax
Keyword(s):  
Light Emission ◽  
Metal Insulator ◽  
Metal Structures ◽  
Metal Insulator Metal

Grating-Coupled Light Emission from the Slow Mode of Metal-Insulator-Metal Tunnel Junctions

1992 ◽  
Vol 31 (Part 2, No. 7A) ◽  
pp. L870-L873 ◽  
Author(s):  
Sukekatsu Ushioda ◽  
Yoichi Uehara ◽  
Masatoshi Takada ◽  
Koji Otsubo ◽  
Junichi Murota
Keyword(s):  
Light Emission ◽  
Tunnel Junctions ◽  
Slow Mode ◽  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Películas de SRO-HFCVD como dieléctrico en estructuras MIS y sus propiedades eléctricas

2020 ◽  
pp. 10-15
Author(s):  
Haydee Patricia Martínez-Hernández ◽  
José Alberto Luna-López ◽  
José Álvaro David Hernández-De la luz ◽  
José Federico Casco-Vásquez
Keyword(s):  
Optical Sensors ◽  
Indium Tin Oxide ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Mis Structure ◽  
Heat Treated ◽  
Integrated Optical ◽  
Silicon Excess ◽  
Hot Filament ◽  
Mis Structures

This paper presents the results obtained by the electrooptical characterization of a MIS structure built by depositing a film of an Indium Tin Oxide (ITO) on a Silicon Rich Oxide (SRO) film using the Chemical Vapor Deposition Hot Filament (HFCVD) system. The SROHFCVD films were deposited considering two hydrogen fluxes levels at 25 and 100 sccm, under these conditions we grow single and double films, both being heat treated at 1100 ° C to improve their optical and structural characteristics. Through of the techniques of Null Spectroscopy, XPS and Photoluminescence, it was possible to determine the thickness of the SRO films, quantify the silicon excess present in them and analyze their spectra. These films are used as the active layer in Metal-Insulating-Semiconductor (MIS) structures, such structures were electrically characterized through the I-V curves. From the result of these characterizations a comparison is made between the MIS structures with films virgin (V) and with ones heat-treated (T-T). Characterizations indicate that SRO-HFCVD films with T-T significantly modify the optical and electrical properties of MIS structures, which is promising for the design of integrated optical sensors.

Properties Of Zinc Selenide Grown By Chemical Vapor Transport And Its Application To Room-Temperature Radiation Detection

1997 ◽  
Vol 487 ◽  
Author(s):  
B. A. Brunett ◽  
J. E. Toney ◽  
H. Yoon ◽  
P. Rudolph ◽  
M. Schieber ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Gamma Ray ◽  
Radiation Detection ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Temperature Radiation

AbstractWe have characterized ZnSe material grown by chemical vapor transport in iodine using triple-axis X-ray diffraction (TAD), photo-induced current transient spectroscopy (PICTS), photoluminescence (PL), current-voltage measurements and gamma-ray spectroscopy. The material was found to have inadequate carrier transport for nuclear spectrometer use, but there was a discernible difference in performance between crystals which could be correlated with crystallinity as determined by the TAD rocking curves.

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