5nm ruthenium thin film as a directly plateable copper diffusion barrier

2005 ◽  
Vol 86 (8) ◽  
pp. 083104 ◽  
Author(s):  
T. N. Arunagiri ◽  
Y. Zhang ◽  
O. Chyan ◽  
M. El-Bouanani ◽  
M. J. Kim ◽  
...  
2012 ◽  
Vol 1490 ◽  
pp. 145-150
Author(s):  
H. H. Hsu ◽  
C. H. Cheng ◽  
C. K. Lin ◽  
K. Y. Chen ◽  
Y. L. Lin

ABSTRACTThis study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te3thermoelectric layer.


2014 ◽  
Vol 3 (6) ◽  
pp. N15-N17 ◽  
Author(s):  
J. Yu ◽  
J. Bian ◽  
L. Jiang ◽  
Y. Qiu ◽  
W. Duan ◽  
...  

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park

Shinku ◽  
1996 ◽  
Vol 39 (3) ◽  
pp. 103-110 ◽  
Author(s):  
Satoru IWAMORI ◽  
Takehiro MIYASHITA ◽  
Shin FUKUDA ◽  
Nobuhiro FUKUDA ◽  
Kazufuyu SUDOH

2004 ◽  
Vol 449-452 ◽  
pp. 681-684
Author(s):  
Jung Sik Kim

In the present study, thermal properties of the electroless-deposited Cu thin film were investigated. The Cu thin film of good adhesion was successfully deposited on the TaN barrier layer by a electroless deposition method. The multilayered structure of Cu/TaN/Si was prepared by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. In order to investigate the effect of post-heat treatment the specimen was annealed in H2 reduction atmosphere. Crystallization and agglomeration of the electroless-deposited Cu film occurred through annealing at H2 atmosphere and resulted in the decrease of film resistance. Thermal stability of Cu/TaN/Si system was maintained up to the annealing temperature of 600°C in H2 atmosphere above which the intermediate compound of Cu-Si was formed through diffusion into the TaN layer


APL Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 013001 ◽  
Author(s):  
Chia-Chi Yu ◽  
Hsin-jay Wu ◽  
Matthias T. Agne ◽  
Ian T. Witting ◽  
Ping-Yuan Deng ◽  
...  

2019 ◽  
Vol 30 (12) ◽  
pp. 11754-11763
Author(s):  
Jieyi Chen ◽  
Honglie Shen ◽  
Zihao Zhai ◽  
Yufang Li ◽  
Yuxing Lin

2012 ◽  
Vol 61 (6) ◽  
pp. 984-987 ◽  
Author(s):  
Tae Eun Hong ◽  
E. D. Jeong ◽  
M. R. Byeon ◽  
Y. B. Kang ◽  
Ho-Soon Yang ◽  
...  

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