Tungsten-Doped Indium Oxide Thin Film as an Effective High-Temperature Copper Diffusion Barrier

2014 ◽  
Vol 3 (6) ◽  
pp. N15-N17 ◽  
Author(s):  
J. Yu ◽  
J. Bian ◽  
L. Jiang ◽  
Y. Qiu ◽  
W. Duan ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Indium Oxide ◽  
Diffusion Barrier ◽  
Oxide Thin Film ◽  
Copper Diffusion ◽  
Indium Oxide Thin Film

scholarly journals Indium oxide thin film based ammonia gas and ethanol vapour sensor

2005 ◽  
Vol 28 (1) ◽  
pp. 9-17 ◽  
Author(s):  
K. K. Makhija ◽  
Arabinda Ray ◽  
R. M. Patel ◽  
U. B. Trivedi ◽  
H. N. Kapse
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Oxide Thin Film ◽  
Ammonia Gas ◽  
Ethanol Vapour ◽  
Indium Oxide Thin Film

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Indium Oxide Thin Film

scholarly journals Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 111
Author(s):  
Rihui Yao ◽  
Xiao Fu ◽  
Wanwan Li ◽  
Shangxiong Zhou ◽  
Honglong Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Spin Coating ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Process Conditions ◽  
Hydroxyl Groups ◽  
Band Theory ◽  
Indium Oxide Thin Film

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

P-type indium oxide thin film for the hole-transporting layer of organic solar cells

2012 ◽  
Vol 520 (7) ◽  
pp. 3118-3124 ◽  
Author(s):  
Pingli Qin ◽  
Guojia Fang ◽  
Nanhai Sun ◽  
Xi Fan ◽  
Qiao Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Indium Oxide ◽  
Organic Solar Cells ◽  
Oxide Thin Film ◽  
Hole Transporting ◽  
P Type ◽  
Indium Oxide Thin Film

Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology

2020 ◽  
Vol 116 (18) ◽  
pp. 182104 ◽  
Author(s):  
Dun-Bao Ruan ◽  
Po-Tsun Liu ◽  
Kai-Jhih Gan ◽  
Yu-Chuan Chiu ◽  
Chih-Chieh Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistor ◽  
Radiation Hardness ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film
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