Plasma Etching of Copper Thin Film over a Dielectric Step and Electromigration Failure Mechanism

2012 ◽  
Vol 1428 ◽  
Author(s):  
Chi-Chou Lin ◽  
Yue Kuo
Keyword(s):  
Plasma Etching ◽  
Ion Bombardment ◽  
Neck Formation ◽  
Cusp Region ◽  
Cu Film ◽  
Local Current ◽  
Plasma Phase ◽  
Sidewall Passivation ◽  
Bombardment Energy ◽  
Phase Chemistry

ABSTRACTProcess and electromigration issues of the copper line over a dielectric step etched with a new plasma-based process have been studied. The N2 and CF4 additive gas effects on the line profile, undercut, and “neck” formation at the cusp area were investigated with respect to changes of the plasma phase chemistry and ion bombardment energy. The sidewall passivation layer hindered the excessive attack of the cusp region. The undercut of the photoresist pattern caused the residue formation. The lifetime of the etched copper was related to the line shape and the film topography, which directly affected the local current density and stress. With the proper control the plasma phase chemistry and ion bombardment energy, the Cu film over a topographic surface can be etched into fine lines with a long electromigration lifetime.

The Role of Oxygen In the CF2Cl2 Reactive Ion Etching of Pecvd Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Yue Kuo
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Extensive Study ◽  
Surface Chemical ◽  
Ion Etching ◽  
Chemical States ◽  
Plasma Phase ◽  
Bombardment Energy ◽  
Phase Chemistry

ABSTRACTAn extensive study on 02 effects on RIE of PECVD a-Si:H and SiNx has been carried out. Mixtures of CF2Cl2/HCI and CF2Cl2/CF3Cl were used as base gases. The addition of O2 into these gases changed the film etch rate and etch selectivity in different ways. Process results were interpreted by examining the plasma phase chemistry, the ion bombardment energy, and ESCA surface chemical states.

Directional Plasma Etching of Polysilicon in SF6/CFCL3 discharges

1986 ◽  
Vol 68 ◽  
Author(s):  
Michael T. Mocella ◽  
Brian E. Thompson ◽  
Herbert H. Sawin
Keyword(s):  
Parameter Space ◽  
Kinetic Modeling ◽  
Plasma Etching ◽  
Etching Rate ◽  
Optical Emission ◽  
Ion Bombardment ◽  
Plasma Impedance ◽  
Polynomial Models ◽  
Bombardment Energy

AbstractThe directional etching of P-doped polysilicon has been studied as a function of power (0.2 – 0.8 W/cm3), pressure (0.2 – 0.4 torr), and CFC13 (FreonR-11) fraction (1 – 20%) in SF6 discharges.Over this parameter space, experimental measures of the etching rate, directionality, plasma impedance, optical emission, and ion-bombardment energy and flux were made.Through Ar actinometry, the concentrations of F and Cl were estimated.Response Surface Methodolgy was used to fit the measurements to polynomial models which were used in the subsequent kinetic modeling of the process.As the fraction of CFCl3 was increased from 1 to 20%, the F concentration fell by a factor of 3 while the Cl concentration increased by a factor of approximately 20.The mask undercut and etching rate, however changed less than a factor of two with the CFCl.increase.The measured average ionbombardment energies were well correlated using discharge currents.

Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

2019 ◽  
Vol 21 (11) ◽  
pp. 5898-5902
Author(s):  
Shenli Zhang ◽  
Yihan Huang ◽  
Gulcin Tetiker ◽  
Saravanapriyan Sriraman ◽  
Alex Paterson ◽  
...  
Keyword(s):  
Computational Modelling ◽  
Atomic Layer ◽  
Ion Bombardment ◽  
Surface Layers ◽  
Bombardment Energy ◽  
Atomic Layer Etching

Cl ion bombardment energy is clearly responsible for disturbing Ge surface layers.

Dry Etch Damage in GaAs P-N Junctions

1991 ◽  
Vol 240 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
C. R. Abernathy ◽  
T. R. Fullowan ◽  
J. R. Lothian
Keyword(s):  
Plasma Etching ◽  
Ion Bombardment ◽  
Plasma Exposure ◽  
Base Resistance ◽  
Ion Energy ◽  
Ion Energies ◽  
A Minor ◽  
P Type ◽  
Dry Etch ◽  
Very High

ABSTRACTGaAs p-n junction mesa-diode structures were fabricated so that both n- and p-type layers could be simultaneously exposed to either O2 or H2 discharges. This simulates the ion bombardment during plasma etching with either CCl2F2/O2 or CH4/H2 mixtures. The samples were exposed to 1 mTorr discharges for period of 1–20 min with DC biases of -25 to -400V on the cathode. For O2 ion bombardment, the collector resistance showed only minor (≤10%) increases for biases up to -200 V and more rapid increases thereafter. In our structure, this indicates that bombardment-induced point defects penetrate at least 500 Å of GaAs for ion energies of ≥200eV. The base resistance displayed only a minor increase (∼10%) over the pre-exposure value even for O+ ion energies of 375 eV, due to the very high doping (1020 cm−3 ) in the base. More significant increases in both collector and base resistances were observed for hydrogen ion bombardment due to hydrogen passivation effects. We will give details of this behaviour as a function of ion energy, plasma exposure time and post-treatment annealing temperature.

X-RAY REFLECTIVITY STUDY OF TETRAHEDRAL AMORPHOUS CARBON FILMS

2000 ◽  
Vol 14 (02n03) ◽  
pp. 181-187 ◽  
Author(s):  
B. K. Tay ◽  
X. Shi ◽  
S. P. Lau ◽  
Q. Zhang ◽  
H. C. Chua ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Amorphous Carbon ◽  
Mass Density ◽  
Ion Bombardment ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Tetrahedral Amorphous Carbon ◽  
Bombardment Energy

Hydrogen-free amorphous carbon films were deposited at different deposition bais voltage on a single silicon wafer by a process known as Filtered Cathodic Vacuum Arc (FCVA). The influences of different deposition bias voltages on the microstructure and the properties of thin tetrahedral amorphous carbon (ta-C) films, such as surface roughness, film mass density and thickness, have been studied by means of the x-ray reflectivity technique (XRR) for the first time. The microstructure of these films deposited on silicon wafers was stimulated by a four-layer model consisting of a ta-C layer, a mixed ta-C:Si layer, Si-O layer and the silicon subtrate. The mixed ta-C:Si layer consisting of the mixture of ta-C and silicon simulates the carbon ion impinging / diffusion into the surface of the silicon substrate. The mass density and the roughness of the film are found to be dependent on the impinging ion bombardment energy. The mass density increases with increase in ion bombardment energy up to 100 eV. Beyond 100 eV, the mass density decreases with further increase in ion bombardment energy up to 100 eV. Beyond 100 EV, the mass density decreases with further increase in ion bombardment energy. The surface roughness decreases with increasing ion bambardment energy to a minimum value at 100 eV, after which it increases with further increase in ion bombardment energy. The thickness of the films obtained by XRR technique correlates well with the thickness measurement obtained by spectral reflectometry. The existence of the Si-O layer was verified by Auger depth profiling.

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